PSTG25HDT MEDER | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- Package with DCB ceramic base plate and soldering pins for PCB mounting
- Isolation voltage over 3000 V∼
- Trench Gate
- Enhancement Mode N-Channel Device
- Non Punch through Structure
- High Switching Speed
- Low On-state Saturation Voltage
- High Input Impedance Simplifies Gate Drive
- Latch-Free Operation
- Fully Short Circuit Rated to 10 µs
- Wide RBSOA
Applications
- High Frequency Inverters
- Motor Control
- Switch Mode Power Supplies
- High Frequency Welding
- UPS Systems
- PWM Drives Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. MB H C LN A G NT C Preliminary Data Sheet
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions NTC 25°C 470 kΩ Symbol Test Conditions Characteristic Value typ. max. ICES VCE = VCES, VGE = 0 V, TVJ = 25°C 0.2 mA TVJ = 125°C 1 mA IGES VCE = 0 V, VGE = ±20 V 500 nA VCE(sat) IC = 25A, VGE = 15 V TVJ = 25°C 1.9 2.3 V TVJ = 125°C 2.1 V VGE(th) IC = 25A, VGE = VCE 7 V td(on) 170 ns tr Inductive load, TVJ = 125°C 17 ns td(off) VCE = 50% VCEs, IC = 25 A 340 ns tf RG = 5 Ω, VGE = ±15 V 60 ns Eon 2 mJ Eoff 3.5 mJ Cies VCE = 75 V, VGE = 15 V, f= 1 MHz 8000 pF Coes VCE = 75 V, VGE = 15 V, f= 1 MHz 340 pF Cies VCE = 75 V, VGE = 15 V, f= 1 MHz 50 pF VFM IF = 25 A, TVJ = 25°C 1.9 V TVJ = 125°C 1.92 V trr IF = 25 A, diRR / dt = 200 A/µs, 90 ns IRRM VR = 50% VRRM 12 A Package style and outline Dimensions in mm (1mm = 0.0394“)