PST1600A_15 DIOTEC | Alldatasheet

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PST1600A ... PST1600M PST1600A ... PST1600M Silicon Rectifier Diodes – Half Bridge Silizium-Gleichrichterdioden– Halbbrücke Version 2013-05-07 Dimensions - Maße [mm] Nominal current Nennstrom 16 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse TO-220AB Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25°C IF = 5 A IF = 8 A PST1600A 50 50 < 1.0 < 1.1 PST1600B 100 100 < 1.0 < 1.1 PST1600D 200 200 < 1.0 < 1.1 PST1600G 400 400 < 1.0 < 1.1 PST1600J 600 600 < 1.0 < 1.1 PST1600K 800 800 < 1.0 < 1.1 PST1600M 1000 1000 < 1.0 < 1.1 Max. average forward current, R-load Dauergrenzstrom mit R-Last TC = 100°C TC = 100°C IFAV IFAV

8 A 1)

16 A 2)

Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 3) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 90 A2s 1) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C

1 Per diode – Pro Diode

2 Output current when operating two devices in a full bridge configuration

Ausgangstrom bei Betrieb zweier Bauteile als Vollbrücke 3 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 321 Type Typ 2.54±0.1 0.8 ±0.2 1.3±0.1 10.1±0.3 3.9 ±0.3 2.8 ±0.3 13.9 ±0.3 14.9 ±0.7 Ø ±0.2 3.8 1.2 ±0.2 0.42±0.1 4.5±0.2 2.67±0.2 8.7 ±0.3

PST1600A ... PST1600M Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C VR = VRRM IR < 5 µA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 2.5 K/W 1) 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. GehäusetemperaturZul. Richtstrom 120 100 IFAV [%] [°C]TC 150100500 [A] IF Forward characteristics (typical values) Durchlasskennlinien (typische Werte) T = 25°Cj T = 125°Cj 200a-(5a-0.95v)