PSMQC033N06NS1 PANJIT | Alldatasheet
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November 9 ,2021 PSMQC033N06NS1-REV.00 Page 1 60V N-Channel Enhancement Mode MOSFET DFN5060-8L Feature RDS(ON), VGS@10V, ID@40A<3.3mΩ RDS(ON), VGS@7V, ID@10A<5.4mΩ High switching speed Low reverse transfer capacitance Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: DFN5060-8L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0028 ounces, 0.08 grams Application BMS, BLDC motor driver switch, Load Switch. Absolute Maximum Ratings (TA = 25 o C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS +20/ -12 Continuous Drain Current (Note 3) TC=25oC ID
131 A TC=100oC 83
Pulsed Drain Current TC=25oC IDM 524 A Single Pulse Avalanche Current (Note 5) IAS 62 A Single Pulse Avalanche Energy (Note 5) EAS 192 mJ Power Dissipation TC=25oC PD 96 W TC=100oC 38 Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Thermal Characteristics PARAMETER SYMBOL MAXIMUM UNITS Thermal Resistance Junction-to-Case (Bottom) RθJC 1.3 oC/W Junction-to-Case (Top) RθJT 21 oC/W Junction-to-Ambient (Note.4) RθJA 50 oC/W Voltage RDSON 60 V 3.3 mΩ Current QG (TYP) 131 A 99 nC Top side view
November 9 ,2021 PSMQC033N06NS1-REV.00 Page 2 Electrical Characteristics (TA = 25 o C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 60 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 3 4 Drain-Source On-State Resistance (Note 1) RDS(on) VGS=10V, ID=40A - 2.5 3.3 mΩ VGS=7V, ID=10A - 3.2 5.4 Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA Transfer characteristics (Note 1) gfs VDS=3V, ID=20A - 71 - S Dynamic (Note 6) Total Gate Charge Qg VDS=30V, ID=40A, VGS=7V - 74 - nC VDS=30V, ID=40A, VGS=10V - 99 - Gate-Source Charge Qgs - 26 - Gate-Drain Charge Qgd - 29 - Plateau Voltage VGP - 4.8 - V Input Capacitance Ciss VDS=30V, VGS=0V, f=1.0MHZ - 5731 - pF Output Capacitance Coss - 2070 - Reverse Transfer Capacitance Crss - 120 - Turn-On Delay Time td(on) VDD=30V, ID=40A, VGS=10V, RG=2Ω (Note 2) - 61 - ns Turn-On Rise Time tr - 106 - Turn-Off Delay Time td(off) - 106 - Turn-Off Fall Time tf - 59 - Gate Resistance Rg f =1.0MHz 0.5 1.7 3 Ω Drain-Source Diode Diode Forward Voltage VSD IS=1A, VGS=0V - 0.7 1 V Reverse Recovery Charge Qrr ISD = 40A di/dt = 100A/μs - 42 - nC Reverse Recovery Time Trr - 52 - ns NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. The maximum current rating is silicon limited. 4. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper. 5. The test condition is L=0.1mH, IAS=62A, VDD=25V, VGS=10V, RG=25ohm, Starting TJ=25oC 6. Guaranteed by design, not subject to production testing.
November 9 ,2021 PSMQC033N06NS1-REV.00 Page 3 Fig.1 Output Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature Fig.5 Capacitance vs. Drain-Source Voltage Fig.6 On-Resistance vs. Gate-Source Voltage TYPICAL CHARACTERISTIC CURVES 120 150 180 0 1 2 3 VDS- Drain-to-Source Voltage (V) VGS=10V ID-Drain Current (A) VGS=4.5V VGS=6V VGS=8V 120 150 180 0 1 2 3 4 5 6 7 TJ=25℃ TJ=125℃ VGS- Gate-to-Source Voltage (V) TJ=-40℃ ID-Drain Current (A) 0 30 60 90 120 150 180 RDS(on)- On-Resistance (mΩ) VGS=10V VGS=7V ID- Drain Current (A) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 0 25 50 75 100 125 150 VGS=7V RDS(on)- On-Resistance (Normalized) VGS=10V Temperature (℃) 1500 3000 4500 6000 7500 9000 0 10 20 30 40 50 60 VDS- Drain-to-Source Voltage(V) f=1MHz Ciss Coss Crss Capacitance (pF) 4 5 6 7 8 9 10 RDS(on)- On-Resistance (mΩ) TJ=125℃ VGS- Gate-to-Source Voltage (V) TJ=25℃ TJ=-40℃ ID=40A
November 9 ,2021 PSMQC033N06NS1-REV.00 Page 4 Fig.7 Gate-Charge Characteristics Fig.8 Breakdown Voltage Variation vs. Temperature Fig.9 Threshold Voltage Variation with Temperature Fig.10 Source-Drain Diode Forward Voltage Fig.11 Maximum Safe Operating Area Fig.12 Normalized Transient Thermal Impedance TYPICAL CHARACTERISTIC CURVES TYPICAL CHARACTERISTIC CURVES 0 20 40 60 80 100 Qg(nC) Qg (nC) VGS-Gate-to-Source Voltage (V) VDS=30V ID=40A 0.8 0.9 1.0 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 ID=250uA Temperature (℃) BVDSS- Drain-to-Source Voltage (Normalized) 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 ID=250uA Temperature (℃) VGS(th)-Threshold Voltage (Normalized) 0.1 100 TJ=125℃ TJ=25℃ TJ=-40℃ ISD-Source-to-Drain Current (A) VSD-Source-to-Drain Voltage (V) 0.1 100 1000 0.1 1 10 100 ID-Drain Current (A) VDS- Drain-to-Source Voltage (V) RDS(ON) 10us 100us 1ms 10ms 100ms DCSINGLE PULSE RӨJC=1.3°C/W TC=25°C 0.001 0.01 0.1 ZӨJC Normalized Transient Thermal Impedance t, Pulse Width PW (sec) SINGLE PULSE RӨJC=1.3°C/W Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single Notes: Duty = PW / T TJ = TC + PDM x ZӨJC x RӨJC PDM PW D= T PW T
November 9 ,2021 PSMQC033N06NS1-REV.00 Page 5 Fig.13 Drain Current vs. Case Temperature 100 120 140 25 50 75 100 125 150 ID-Drain Current (A) Temperature (℃)
November 9 ,2021 PSMQC033N06NS1-REV.00 Page 6 Product and Packing Information Packaging Information & Mounting Pad Layout DFN5060-8L Dimension Unit: inch(mm) DFN5060-8L Pad Layout Unit: inch(mm) Marking Diagram Y = Year Code W = Week Code (A~Z) LL = Lot Code (00~99) x = Production Line Code Part No. Package Type Packing Type Marking PSMQC033N06NS1 DFN5060-8L 3000pcs / 13” reel 033N06NS PJ 033N06NS YWLL x
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