PSMP050N10NS2 PANJIT | Alldatasheet
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July 21,2022 PSMP050N10NS2-REV.00 Page 1 100V N-Channel Enhancement Mode MOSFET TO-220AB-L Feature RDS(ON),max < 5.0 mΩ at VGS = 10 V, ID = 50 A RDS(ON),max < 7.0 mΩ at VGS = 6 V, ID = 25 A High switching speed Low reverse transfer capacitance Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: TO-220AB-L package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 2.0948 grams Application SR solutions of Power supply, BMS, BLDC motor driver switch Absolute Maximum Ratings (TA = 25 o C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current (Note 3) TC=25 oC ID
120 A TC=100 oC 76
Pulsed Drain Current (Note 6) TC=25 oC IDM 480 A Single Pulse Avalanche Current (Note 5) IAS 50 A Single Pulse Avalanche Energy (Note 5) EAS 318 mJ Power Dissipation TC=25 oC PD 138 W TC=100 oC 55 Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Thermal Characteristics PARAMETER SYMBOL MAXIMUM UNITS Thermal Resistance Junction-to-Case (Bottom) RθJC 0.9 oC/W Junction-to-Ambient (Note.4) RθJA 60 oC/W Voltage RDS(ON),max 100 V < 5.0 mΩ Current QG (TYP) 120 A 40.5 nC
July 21,2022 PSMP050N10NS2-REV.00 Page 2 Electrical Characteristics (TA = 25 o C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250 μA 100 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=270 μA 1.8 2.8 3.8 Drain-Source On-State Resistance (Note 1) RDS(on) VGS=10 V, ID=50 A - 4.3 5.0 mΩ VGS=6 V, ID=25 A - 5.4 7.0 Zero Gate Voltage Drain Current IDSS VDS=100 V, VGS=0 V - - 1 μA Gate-Source Leakage Current IGSS VGS=±20 V, VDS=0 V - - ±100 nA Transfer characteristics (Note 1) gfs VDS=10 V, ID=50 A - 100 - S Gate Resistance Rg f =1.0 MHz - 0.8 1.6 Ω Dynamic (Note 6) Total Gate Charge Qg VDS=50 V, ID=50 A, VGS=10 V - 40.5 53 nC Gate-Source Charge Qgs - 15 - Gate-Drain Charge Qgd - 6 - Gate Plateau Voltage Vplateau - 5 - V Input Capacitance Ciss VDS=50 V, VGS=0 V, f=250 kHz - 3010 3910 pF Output Capacitance Coss - 1080 1400 Reverse Transfer Capacitance Crss - 14 - Output Charge Qoss VDS=50 V, VGS=0 V - 85 110 nC Turn-On Delay Time td(on) VDD=50 V, ID=50 A, VGS=10 V, RG=3.0 Ω (Note 2) - 16 - ns Rise Time tr - 6 - Turn-Off Delay Time td(off) - 26 - Fall Time tf - 6 - Drain-Source Diode Diode Forward Voltage VSD IS=50 A, VGS=0 V - 0.9 1.2 V Reverse Recovery Charge (Note 6) Qrr IF=50 A, VDD=50 V di/dt=100 A/μs - 85 170 nC Reverse Recovery Time (Note 6) Trr - 56 112 ns NOTES : 1. Pulse width < 300 μs, Duty cycle < 2 % 2. Essentially independent of operating temperature typical characteristics. 3. The maximum drain current calculated by maximum junction temperature and thermal impedance. It can be varied by application and environment. 4. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper. IAS = 50 A in production. 6. Guaranteed by design, not subject to production testing.
July 21,2022 PSMP050N10NS2-REV.00 Page 3 Fig.1 Output Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature Fig.5 Capacitance vs. Drain-Source Voltage Fig.6 On-Resistance vs. Gate-Source Voltage TYPICAL CHARACTERISTIC CURVES 100 1000 10000 0.1 1 10 100 Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss f = 250 kHz VGS = 0 V 100 200 300 400 500 0 1 2 3 4 VDS- Drain-to-Source Voltage (V) VGS = 10 V ID-Drain Current (A) VGS= = 6.5 V VGS= 5 V VGS= 6 V VGS = 8 V 100 200 300 400 500 0 1 2 3 4 5 6 7 8 9 10 TJ= 25 ℃ TJ= 150 ℃ VGS- Gate-to-Source Voltage (V) TJ= -55 ℃ ID-Drain Current (A) Pulse Duration = 180 μs VDS = 4 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 0 25 50 75 100 125 150 VGS = 6 V Normalzided RDS(on)- On-Resistance (mΩ) VGS = 10 V Temperature (℃) 3 4 5 6 7 8 9 10 RDS(on)- On-Resistance (mΩ) TJ = 125 ℃ VGS- Gate-to-Source Voltage (V) TJ = 25 ℃ Pulse Duration = 180 μs ID = 50 A 0 50 100 150 200 250 300 350 400 RDS(on)- On-Resistance (mΩ) VGS = 10 V VGS = 5 V ID- Drain Current (A) VGS = 6 V VGS = 6.5 V VGS = 8 V
July 21,2022 PSMP050N10NS2-REV.00 Page 4 Fig.7 Gate-Charge Characteristics Fig.8 Breakdown Voltage Variation vs. Temperature Fig.9 Threshold Voltage Variation with Temperature Fig.10 Source-Drain Diode Forward Voltage Fig.11 Maximum Safe Operating Area Fig.12 Normalized Transient Thermal Impedance TYPICAL CHARACTERISTIC CURVES 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 ID = 270 uA Temperature (℃) Normalized VGS(th)-Threshold Voltage (V) 0 10 20 30 40 50Qg(nC) Qg (nC) VGS-Gate-to-Source Voltage (V) VGS = 10 V ID = 50 A VDD = 20 V VDD = 80 V VDD = 50 V 0.90 0.95 1.00 1.05 1.10 -75 -50 -25 0 25 50 75 100 125 150 ID = 250uA Temperature (℃) Normalized BVDSS- Drain-to-Source Voltage (V) 0.1 100 TJ = 150 ℃ TJ = 25 ℃ TJ = -55 ℃ ISD-Source-to-Drain Current (A) VSD-Source-to-Drain Voltage (V) 0.01 0.1 Normalized Pulse thermal resistance [K/W] Pulse time [s] 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse SINGLE PULSE RӨJC = 0.9 °C/W Notes: Duty = PW / T TJ = TC + PDM x ZӨJC x RӨJC PDM PW D= T PW T 100 1000 0.1 1 10 100 ID-Drain Current (A) VDS- Drain-to-Source Voltage (V) This area is limited by RDS(ON) SINGLE PULSE RӨJC = 0.9 °C/W TC = 25 °C
July 21,2022 PSMP050N10NS2-REV.00 Page 5 Fig.13 Avalanche Characteristics Fig.14 Drain Current vs. Case Temperature TYPICAL CHARACTERISTIC CURVES 100 10 100 1000 IAV, Avalanche Current (A) tAV, Avalanche duration (μs) TJ = 25 ℃ TJ = 125 ℃ TJ = 100 ℃ 100 120 140 25 50 75 100 125 150 ID-Drain Current (A) Temperature (℃)
July 21,2022 PSMP050N10NS2-REV.00 Page 6 Product and Packing Information Packaging Information TO-220AB-L Dimension Unit: inch(mm) Marking Diagram Y = Year Code W = Week Code (A~Z) LL = Lot Code (00~99) x = Production Line Code Part No. Package Type Packing Type Marking PSMP050N10NS2 TO-220AB-L 50pcs / Tube 050N10NS PJ 050N10NS YWLL x
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