PSMN015N10NS2 PANJIT | Alldatasheet
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April 2,2024 PSMN015N10NS2-REV.01 Page 1 100V N-Channel Enhancement Mode MOSFET TOLL Feature RDS(ON) < 1.5 mΩ at VGS = 10 V, ID = 100 A RDS(ON) < 2.4 mΩ at VGS = 6 V, ID = 50 A High switching speed Low reverse transfer capacitance Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 100% UIS / Rg test in mass production Mechanical Data Case: TOLL Package Approx. Weight: 0.775 grams Application ESS / BBU/ LEV / BSG. Absolute Maximum Ratings (TA = 25 o C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current by RθJC (Note 3) TC=25 oC ID 398 A TC=100 oC 281 Continuous Drain Current by RθJA TA=25 oC ID 34 A TA=70 oC 28 Pulsed Drain Current by RθJC TC=25 oC IDM 1592 A Single Pulse Avalanche Current (Note 5) IAS 80 A Single Pulse Avalanche Energy (Note 5) EAS 1152 mJ Power Dissipation by RθJC TC=25 oC PD 500 W TC=100 oC 250 Power Dissipation by RθJA TA=25 oC PD 3.8 W TA=70 oC 2.6 Operating Junction and Storage Temperature Range TJ,TSTG -55~175 oC Thermal Characteristics PARAMETER SYMBOL VALUES UNITS MIN. TYP. MAX. Thermal Resistance Junction-to-Case (Bottom) RθJC - 0.18 0.3 oC/W Junction-to-Ambient (Note 4) RθJA - - 40 oC/W Voltage RDSON 100 V 1.5 mΩ Current QG (TYP) 398 A 128 nC Top side view
April 2,2024 PSMN015N10NS2-REV.01 Page 2 Electrical Characteristics (TA = 25 o C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250 μA 100 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=890 μA 1.8 2.8 3.8 Drain-Source On-State Resistance (Note 1) RDS(on) VGS=10 V, ID=100 A - 1.2 1.5 mΩ VGS=6 V, ID=50 A - 1.6 2.4 Zero Gate Voltage Drain Current IDSS VDS=100 V, VGS=0 V - - 5 μA Gate-Source Leakage Current IGSS VGS=±20 V, VDS=0 V - - ±100 nA Transfer characteristics (Note 1) gfs VDS=10 V, ID=100 A - 300 - S Dynamic Characteristics (Note 6) Total Gate Charge Qg VDS=50 V, ID=100 A, VGS=10 V - 128 166 nC Gate-Source Charge Qgs - 42 - Gate-Drain Charge Qgd - 17 - Gate Plateau Voltage Vplateau - 4.5 - V Input Capacitance Ciss VDS=50 V, VGS=0 V, f=250 kHz - 9640 12500 pF Output Capacitance Coss - 3670 4770 Reverse Transfer Capacitance Crss - 39 - Output Charge Qoss VDS=50 V, VGS=0 V - 277 360 nC Turn-On Delay Time td(on) VDD=50 V, ID=100 A, VGS=10 V, RG=1.8 Ω (Note 2) - 24.5 - ns Rise Time tr - 8.9 - Turn-Off Delay Time td(off) - 44.8 - Fall Time tf - 10.2 - Gate Resistance Rg f =1.0 MHz - 0.5 1.0 Ω Drain-Source Diode Diode Forward Voltage VSD IS=100 A, VGS=0 V - 0.9 1.2 V Reverse Recovery Charge Qrr IF=100 A, VDD=50 V, di/dt=100 A/μs - 88 - nC Reverse Recovery Time Trr - 260 - ns NOTES : 1. Pulse width ≤ 300 μs, Duty cycle ≤ 2 %. 2. Essentially independent of operating temperature typical characteristics. 3. The maximum drain current calculated by maximum junction temperature and thermal impedance. It can be varied by application and environment. 4. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper. 5. EAS is calculated based on the condition of L = 1.0 mH, IAS = 48 A, VDD = 50 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 80 A in production. 6. Guaranteed by design, not subject to production testing.
April 2,2024 PSMN015N10NS2-REV.01 Page 3 Fig.1 Output Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature Fig.5 Capacitance vs. Drain-Source Voltage Fig.6 On-Resistance vs. Gate-Source Voltage TYPICAL CHARACTERISTIC CURVES 100 200 300 400 500 600 700 800 900 0 1 2 3 4 IDS-Drain-to-Source Current (A) VDS-Drain-to-Source Voltage (V) VGS = 6 V VGS = 6.5 VVGS = 10 V VGS = 8 V VGS = 5 V 100 200 300 400 500 600 700 800 2 3 4 5 6 7 IDS-Drain-to-Source Current (A) VGS-Gate-to-Source Voltage (V) TJ = 25 ℃ TJ = 175 ℃ Pulse Duration = 180 μs VDS = 4 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 700 800 900 RDS(on)-On-Resistance (mΩ) IDS-Drain-to-Source Current (A) VGS = 10 V VGS = 6 V VGS = 8 V VGS = 6.5 V VGS = 5 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Normalized RDS(on)-On-Resistance (mΩ) Temperature (℃) VGS = 6 V VGS = 10 V 3 4 5 6 7 8 9 10 RDS(on)-On-Resistance (mΩ) VGS-Gate-to-Source Voltage (V) TJ = 175 ℃ Pulse Duration = 180 μs ID = 100 A TJ = 25 ℃ 100 1000 10000 100000 1 10 100 Capacitance (pF) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss f = 100 kHz VGS = 0 V
April 2,2024 PSMN015N10NS2-REV.01 Page 4 Fig.7 Gate-Charge Characteristics Fig.8 Breakdown Voltage Variation vs. Temperature Fig.9 Threshold Voltage Variation with Temperature Fig.10 Source-Drain Diode Forward Voltage Fig.11 Maximum Safe Operating Area Fig.12 Normalized Transient Thermal Impedance TYPICAL CHARACTERISTIC CURVES 0 25 50 75 100 125 150 VGS-Gate-to-Source Voltage (V) Qg (nC) Qg(nC) VGS = 10 V ID = 50 A VDD = 20 V VDD = 80 V VDD = 50 V 0.90 0.95 1.00 1.05 1.10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Normalized BVDSS- Drain-to-Source Voltage (V) Temperature (℃) ID = 5 mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Normalized VGS(th)-Threshold Voltage (V) Temperature (℃) ID = 890 µA 0.1 100 1000 ISD-Source-to-Drain Current (A) VSD-Source-to-Drain Voltage (V) TJ = 175 ℃ TJ = 25 ℃ VGS = 0 V 0.01 0.1 Normalized Pulse Thermal Resistance (K/W) Pulse Time (s) 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse SINGLE PULSE RӨJC = 0.3 °C/W Notes: Duty = PW / T TJ = TC + PDM x ZӨJC x RӨJC PDM PW D= T PW T 100 1000 10000 0.1 1 10 100 ID-Drain Current (A) VDS- Drain-to-Source Voltage (V) This area is limited by RDS(ON) DC SINGLE PULSE RӨJC = 0.3 °C/W TC = 25 °C
April 2,2024 PSMN015N10NS2-REV.01 Page 5 Product and Packing Information Packaging Information & Mounting Pad Layout TOLL Dimension Unit: inch(mm) TOLL Pad Layout Unit: inch(mm) Marking Diagram Y = Year Code W = Week Code (A~Z) LL = Lot Code (00~99) x = Production Line Code Part No. Package Type Packing Type Marking PSMN015N10NS2 TOLL 2000pcs / reel 015N10NS PJ 015N10NS YWLL x
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