PSMN013-100BS

PSMN013-100BS VBSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

N-Channel 100-V (D-S) MOSFET

FEATURES

• T r e n c h F ET® Power MOSFET  175 °C Maxim um Junction Temperature  Compliant to RoHS Directive 2002/95/EC TO-263 S D G Top View N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless ot herwise noted Parameter Symbol Limi t Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Curren t (TJ = 150 °C) TC = 25 °C ID 100 A TC = 125 °C 75 a Pulsed Drain Current IDM 300 Avalanche Current L = 0.1 mH IAS 75 Single Pulse Avalanche Energyb EAS 280 mJ Maximum Pow er Dissipationb TC = 25 °C (TO-220AB and TO-263 ) PD 250c W TA = 25 °C (TO-263)d 3.75 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limi t Unit Junction-to-Ambient PCB Mount (TO-263)d RthJA °C/WFree Air (TO-220AB) 62.5 Junction-to-Case RthJC 0.6 Notes: a. Pulse test; pulse wi dth ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. VDS (V) RDS(on) (Ω)I D (A) 100 0.010 at VGS = 10 V 100 0.023 at VGS = 4.5 V 85 PRODUCT SUMMARY E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PSMN013-100BS A ll data sheet.com

Notes: a. Pulse test; pulse wi dth ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless oth erwise noted Parameter Symb o l Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 10 V 120 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 30 A 0.010 Ω VGS = 4.5 V, ID = 20 A 0.023 VGS = 10 V, ID = 30 A, TJ = 125 °C VGS = 10 V, ID = 30 A, TJ = 175 °C 0.030 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 6550 pFOutput Capacitance Coss 665 Reverse Transfer Capacitance Crss 265 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 85 A 105 160 nCGate-Source Chargec Qgs 17 Gate-Drain Chargec Qgd 23 Tur n-On Del ay Timec td(on) VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 12 25 nsRise Timec tr 90 135 Turn-Off DelayTimec td(off) 55 85 Fall Timec tf 130 195 Source-Drain Diode Ratings and Ch aracteristics TC = 25 °Cb Continuous Current IS 85 A Pulsed Current ISM 240 Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.0 1.5 V Reverse Recover y Time trr IF = 50 A, dI/dt = 100 A/µs 85 140 ns Peak Reve rse Recovery Current IRM(REC) 4.5 7 A Reverse Recovery Charge Qrr 0.17 0.35 µC 0.020 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PSMN013-100BS A ll data sheet.com

TYPICAL CHARACTERISTICS TA = 25 °C, unless oth erwise noted Output Characteristics Transc onductance Capacitance 100 150 200 250 0 2468 10 3 V VGS = 10 V thru 6 V 4 V 5 V VDS - Drain-to-Source Voltage ( - Drain Current (A)I D 100 150 200 250 02 0 4 0 6 0 80 100 -) S ( e c n a t cud n o c s n a r T gs f TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 2000 4000 6000 8000 10 000 0 1 53 04 56 07 5 C iss Coss Crss VDS - Drain-to-Source Voltage ( C - Capacitance (pF) Transfer Characteristics On-R esistance vs. Drain Current Gate Charge 100 150 200 0123456 25 °C - 55 °C T C = 125 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 0.000 0.005 0.010 0.015 0.020 0 2 04 06 0 80 100 120 V GS = 10 V V GS = 6 V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0 50 100 150 200 V DS = 50 V I D = 85 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PSMN013-100BS A ll data sheet.com

TYPICAL CHARACTERISTICS TA = 25 °C, unless other wise noted On-Resistance vs. Junction Temperatur e Avalanche Current vs. Time 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 V GS = 10 V I D = 30 A TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) tin (s) 1000 0.00001 0.001 0.1 1 0.1 ) a ( I va D 0.01 IAV (A) at TA = 150 °C 100 0.0001 IAV (A) at TA = 25 °C Source-Drain Diode Fo rward Voltage TJ - Drain-Source Breakdown vs. Junction-T emperature 100 0.3 0.6 0.9 1.2 T J = 25 °C T J = 150 °C VSD -S ource-to-Drain Voltage (V - Source Current (A)I S 100 110 120 130 140 - 50 - 25 0 25 50 75 100 125 150 175 TJ -J unction Temperature (°C) )V(V S D I D = 250 µA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PSMN013-100BS A ll data sheet.com

Maximum Avalanche and Drain Current vs. Case Tem perature 100 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) I D - Drain Current (A) Safe Operating Area 1000 0.1 1 10 1000 0.1 100 T C = 25 °C Single Pulse 1 ms 10 ms 100 ms, DC 10 µs 100 µs 100 VDS - Drain-to-Source Voltage ( * VGS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID Limited by RDS(on)* Normalized Thermal Tra nsient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 e v i t c e f f E d e z i l a m r o N t n e i s n a r T e c n a d e p m I l a m r e h T 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PSMN013-100BS A ll data sheet.com

• M = 1.32 mm to 1.62 mm (dimension including protru sion) Heatsink hole for HV M 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PSMN013-100BS A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PSMN013-100BS A ll data sheet.com