PSMN012-30YLC

PSMN3R8-30LL PHILIPS | Alldatasheet

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2 NextPower MOSFETs - Visit us at www.nxp.com/mosfets NextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8) NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK As a power design engineer, compromise is never far from your mind. Do I choose a low R DS(on) device and accept the higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find that the package options are no longer ideal in my application? The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise… Many competitors focus only on optimising R DS(on) and Qg. As Qg gets lower then losses due to Q oss and Qgd become more significant. NextPower uses Superjunction technology to provide the optimum balance between low R DS(on), low Qoss, low Qg(tot) and Qgd to give optimum switching performance. NextPower delivers superior SOA performance, and low Qoss reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest R DS(on) with sub 1 mΩ types at both 25 V and 30 V. LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect solder defects as is common with QFN style Power-SO8 packages. Key benefits } High efficiency in power switching applications } Industry’s lowest R DS(on) Power-SO8 - Less than 1 mΩ at 25 V and 30 V } Low Qoss for reduced output losses between DRAIN & SOURCE } Low Qgd for reduced switching losses and high frequency switching } 20 V rated GATE provides better tolerance to voltage transients than lateral MOSFET types } Superior ‘Safe Operating Area’ performance compared to other Trench MOSFET vendors } Optimised for 4.5 V gate drive voltage } Optimum switching performance under light & heavy load conditions } LFPAK package for compatibility with other vendor Power-SO8 types } Eliminates costly X-ray inspection – LFPAK solder joints can be optically inspected Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

3NextPower MOSFETs - Visit us at www.nxp.com/mosfets NextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8) Benefits of Superjunction technology Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story. The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing the six most important MOSFET parameters required for high-performance & high reliability switching applications. The outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph represents a weakness. } Low R DS(on) gives low I2R losses and superior performance when used in a SYNC FET or power OR-ing application } Low Qoss gives reduced losses between the drain & source terminals since the energy stored in the output capacitance (C oss) is wasted whenever the voltage changes across the output terminals } SOA performance provides tolerance to overload & fault conditions. The graph shows the maximum allowable current for a 1 mS pulse at V DS=10 V } Low Miller charge (QGD) gives reduced switching losses between the MOSFET’s drain & source terminals when the MOSFET turns ON or turns OFF } Low gate charge (Q G) gives reduced losses in the gate drive circuit since less energy is required to turn the MOSFET ON & OFF } Superior junction temperature rating, T j(max), is proof that LFPAK is the most rugged Power-SO8 package available. LFPAK is the best choice for demanding environments and where high reliability is required Comparison of NextPower technology with key competitor types RDS(on)max @ Vgs = 4.5 V Tj(max) NXP Competitor A Competitor B Combined QG & QGD FOM SOA rating Qoss FOM

4 NextPower MOSFETs - Visit us at www.nxp.com/mosfets NextPower types – parametric data The 25 V and 30 V types shown below are recommended for synchronous buck regulators, the low R DS(on) types are also highly recommended for Power OR-ing applications and low voltage isolated power supply topologies. Type Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) QG(typ) VGS = 4.5 V (nC) QGD(typ) VGS = 4.5 V (nC) COSS (pF) PSMN0R9-25YLC 25 0.95 51 14 1437 PSMN1R1-25YLC 25 1.2 39 11 1121 PSMN1R2-25YLC 25 1.35 31 8.3 994 PSMN1R7-25YLC 25 2 28 7.8 880 PSMN1R9-25YLC 25 2.2 27 7.4 761 PSMN2R2-25YLC 25 2.6 18 5.2 617 PSMN2R9-25YLC 25 3.45 16 4.4 501 PSMN3R2-25YLC 25 3.7 14 4 462 PSMN3R7-25YLC 25 4.25 10.1 3 370 PSMN4R0-25YLC 25 4.5 10.9 3.5 354

25 V NextPower types

NextPower MOSFETs use ‘Superjunction’ silicon technology to deliver the optimum balance between low R DS, low QG(tot), low QGD, high SOA performance and low C oss at 25 V and 30 V. Superjunction technology combines the benefits of a lateral MOSFET, (low Q g(tot) and low QGD) with the benefits of a Trench-MOSFET (low RDS(on) and 20 V rugged GATE rating) resulting in a uniquely balanced specification. NextPower uses an optimized balance of the different resistance elements in the MOSFET to achieve a lower on-resistance for every cell. The low cell resistance means that NextPower types typically require fewer cells than competitor devices to achieve the same R DS(on), and a lower cell count provides lower QG(tot), low QGD, low Coss and superior ‘Safe operating area’ ruggedness. NextPower technology uses p-Type pillars to improve the breakdown voltage in the OFF state, and a heavily doped n-Type drift region to achieve exceptionally low ON resistance. Since fewer cells are required to achieve a given R DS rating, then gate charge (QG), Miller charge (QGD), output capacitance (Coss) are all reduced and optimum ruggedness (denoted by the safe operating area characteristics) is achieved. Superjunction technology Drain p-Type PILLARS n-Type DRIFT REGION Gate p-Body Source

5NextPower MOSFETs - Visit us at www.nxp.com/mosfets Type Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) QG(typ) VGS = 4.5 V (nC) QGD(typ) VGS = 4.5 V (nC) COSS (pF) PSMN1R0-30YLC 30 1.1 50 14.6 1210 PSMN1R2-30YLC 30 1.35 38 11.6 977 PSMN1R5-30YLC 30 1.65 30 8.6 860 PSMN2R2-30YLC 30 2.3 26 8 651 PSMN2R6-30YLC 30 3.1 18 5.5 549 PSMN3R2-30YLC 30 3.75 14.2 4.1 432 PSMN3R7-30YLC 30 4.25 14 4.2 380 PSMN4R1-30YLC 30 4.75 11 3.5 316 PSMN4R5-30YLC 30 5.1 9.6 2.85 288

30 V NextPower types

Comparing NXP NextPower with NXP Trench 6 technology Benchmark testing for NextPower types shows a 1% efficiency gain compared to equivalent Trench 6 types: Test conditions } Input Voltage: 12 V } Output Voltage: 1.2 V } 1 phase } Frequency: 500 KHz } Air flow: 200 LFM Type Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) QG(typ) VGS = 4.5 V (nC) QGD(typ) VGS = 4.5 V (nC) COSS (pF) PSMN1R5-30YL 30 1.8 36 8.7 1082 PSMN1R5-30YLC 30 1.65 30 8.6 860 PSMN4R0-30YL 30 3.7 18 4.3 469 PSMN4R5-30YLC 30 5.1 9.6 2.85 288 =K,LMN<=) OKC$F9E) =K,LMN<=) OKPC$F9E) =K,LMN<=) 8+,,C$F9E) XYW! V5T! f5\\! U5]V! U]] ! 0 5 10 15 20 25 30 NextPower: PSMN4R5-30YLC / PSMN1R5-30YLC Trench 6: PSMN4R0-30YL / PSMN1R5-30YL Efficiency ILOAD (Amps)

6 NextPower MOSFETs - Visit us at www.nxp.com/mosfets Comparing NextPower with a leading competitor Benchmarking tests show that NextPower types deliver 1% efficiency gains compared to the nearest competitor types: Test conditions } Input Voltage: 12 V } Output Voltage: 1.2 V } 1 phase } Frequency: 500 KHz } Air flow: 200 LFM 0 5 10 15 20 25 30 PSMN4R0-25YLC/PSMN1R1-25YLC Competitor Efficiency ILOAD (Amps) Safe Operating Area comparison NXP Trench 6 and previous generation from competition NXP NextPower and latest generation from competition NXP SOA Current (Amp) Competitor 1 Competitor 2 Condition: SOA Drain current (Amp) @ V ds=10 V, 10 ms pulse for a 5 mΩ (@ 10 V) in Power SO8 Why Choose LFPAK? } Reduced electrical resistance and inductance } Outstanding thermal performance } Rugged design, qualified to AEC-Q101 (stringent automotive standard) } Easy to handle, solder and inspect } Power-SO8 footprint compatible

7NextPower MOSFETs - Visit us at www.nxp.com/mosfets NextPower types - Coming in Q3-2011 Further NextPower types are planned for release in Q3-2011. Preliminary data is provided in the tables below. These types are recommended for control-FET applications in synchronous-buck regulators. YLB types have an integrated snubber circuit to further reduce spiking levels for critical applications. Type Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) PSMN5R0-25YLB 25 6.1 PSMN5R0-25YLC 25 6.6 PSMN6R0-25YLC 25 7.3 PSMN7R3-25YLC 25 8.9 PSMN9R0-25YLC 25 10.7 PSMN011-25YLC 25 12.7 Type Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) PSMN6R0-30YLB 30 6.7 PSMN6R0-30YLC 30 7.6 PSMN7R0-30YLC 30 8.5 PSMN8R6-30YLC 30 10.3 PSMN011-30YLC 30 11.7 PSMN012-30YLC 30 13.8 MOSFET BRAND NAME MOSFET type N-ch or P-ch MOSFET on-resistance RDS(on) - MOSFET voltage BVDS Package type Gate threshold voltage NextPower special features P S M N 1 R 7 - 25 Y L C Power Silicon Max N = N-ch R95 = 0.95 mΩ - 25 = 25 V B = D2PAK SOT404 L = Logic-level C = Optimised for Qg(fom) P = P-ch 1R7 = 1.7 mΩ - 30 = 30 V D = DPAK SOT428 S = Standard-level B = integrated snubber X = Dual N-ch 014 = 14 mΩ - 40 = 40 V E = I2PAK SOT226 Y = Dual P-ch 125 = 125 mΩ - 60 = 60 V K = SO8 SOT96 Z = N-ch + P-ch - 80 = 80 V L = QFN3333 SOT873 - 100 = 100 V P = TO220 SOT78 - 110 = 110 V Y = LFPAK SOT669 & SOT1023 - 120 = 120 V X = TO220F (FULLPACK) SOT186A Part numbering for NXP MOSFETs types in bold red italic underline represent products in development

© 2011 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. www.nxp.com Date of release: May 2011 Document order number: 9397 750 17100 Printed in the Netherlands