PSMN009-100W

PSMN009-100W PHILIPS | Alldatasheet

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Technical content

Philips Semiconductors Objective specification TrenchMOS  transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA

• ’Trench’ technology
• Very low on-state resistance VDSS = 100 V
• Fast switching
• High thermal cycling performance ID = 100 A
• Low thermal resistance R DS(ON) ≤ 9 mΩ GENERAL DESCRIPTION PINNING SOT429 (TO247) N-channel enhancement mode PIN DESCRIPTION field-effect power transistor in a plastic envelope using ’trench’ 1 gate technology. The device has very low on-state resistance. It is 2 drain intended for use in dc to dc converters and general purpose 3 source switching applications. tab drain The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage T j = 25 ˚C to 175˚C - 100 V VDGR Drain-gate voltage T j = 25 ˚C to 175˚C; RGS = 20 kΩ - 100 V VGS Gate-source voltage - ± 20 V ID Continuous drain current Tmb = 25 ˚C - 100 1 A Tmb = 100 ˚C - 79 A IDM Pulsed drain current T mb = 25 ˚C - 300 A PD Total power dissipation T mb = 25 ˚C - 300 W Tj, Tstg Operating junction and - 55 175 ˚C storage temperature AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT EAS Non-repetitive avalanche Unclamped inductive load, IAS = 96 A; - 1255 mJ energy t p = 0.2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω ; VGS = 5 V IAS Non-repetitive avalanche - 100 A current d g s 2 31 1 Maximum continuous current limited by package. February 1999 1 Rev 1.000

Philips Semiconductors Objective specification TrenchMOS transistor PSMN009-100W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction - 0.5 K/W to mounting base R th j-a Thermal resistance junction in free air 45 - K/W to ambient

ELECTRICAL CHARACTERISTICS

Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 100 - - V voltage T j = -55˚C 89 - - V VGS(TO) Gate threshold voltage V DS = VGS ; ID = 1 mA 2.0 3.0 4.0 V Tj = 175˚C 1.0 - - V R DS(ON) Drain-source on-state V GS = 10 V; ID = 25 A - 8 9 m Ω resistance T j = 175˚C - - 25 m Ω IGSS Gate source leakage current VGS = ±10 V; VDS = 0 V - 2 100 nA IDSS Zero gate voltage drain V DS = 100 V; VGS = 0 V; - 0.05 10 µA current T j = 175˚C - - 500 µA Q g(tot) Total gate charge I D = 100 A; VDD = 80 V; VGS = 10 V - 190 - nC Q gs Gate-source charge - 35 - nC Q gd Gate-drain (Miller) charge - 90 - nC td on Turn-on delay time V DD = 50 V; RD = 2 Ω ; - 58 - ns tr Turn-on rise time V GS = 10 V; RG = 5 Ω - 133 - ns td off Turn-off delay time Resistive load - 250 - ns tf Turn-off fall time - 133 - ns Ld Internal drain inductance Measured from tab to centre of die - 3.5 - nH Ld Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH Ls Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 7500 8000 pF C oss Output capacitance - 917 950 pF C rss Feedback capacitance - 508 550 pF REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IS Continuous source current - - 100 A (body diode) ISM Pulsed source current (body - - 300 A diode) V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.85 1.2 V IF = 75 A; VGS = 0 V - 1.1 - V trr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 200 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 1.5 - µC February 1999 2 Rev 1.000

Philips Semiconductors Objective specification TrenchMOS transistor PSMN009-100W MECHANICAL DATA Dimensions in mm Net Mass: 5 g Fig.1. SOT429; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelope. 3. Epoxy meets UL94 V0 at 1/8". REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT429 TO-247 97-06-11 0 10 20 mm scale Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 E P A β w Mb 12 3 ee c Q q L Y R D S L1(1) Note 1. Terminals are uncontrolled within zone L1. α UNIT A 1 Db E e wSRqQPLYb2b1 c L1 DIMENSIONS (mm are the original dimensions) A βα mm 17° 13° 5.3 4.7 1.9 1.7 2.2 1.8 1.2 0.9 3.2 2.8 0.9 0.6 15 5.45 3.7 3.3 2.6 2.4 5.3 7.5 7.1 0.4 15.7 15.3 4.0 3.6 3.5 3.3 February 1999 3 Rev 1.000

Philips Semiconductors Objective specification TrenchMOS transistor PSMN009-100W DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 4 Rev 1.000