PSMB032N08NS1 PANJIT | Alldatasheet

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April 6,2022 PSMB032N08NS1-REV.00 Page 1 80V N-Channel Enhancement Mode MOSFET TO-263 Feature:  RDS(ON) Max, VGS@10V, ID@50A<3.4mΩ  RDS(ON) Max, VGS@7V, ID@25A<5mΩ  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-263 package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 1.38 grams Application  BMS, BLDC. SMPS SR. Absolute Maximum Ratings (TA = 25 o C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25oC (Note 3) ID

161 A TC=100oC 102

Pulsed Drain Current TC=25oC IDM 480 A Single Pulse Avalanche Current (Note 5) IAS 38 A Single Pulse Avalanche Energy (Note 5) EAS 722 mJ Power Dissipation TC=25oC PD 156 W TC=100oC 62.5 Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Thermal Characteristics PARAMETER SYMBOL MAXIMUM UNITS Thermal Resistance Junction-to-Case RθJC 0.8 oC/W Junction-to-Ambient (Note 4) RθJA 62.5 oC/W Voltage RDSON 80 V 3.4 mΩ Current QG (TYP) 161 A 103.5 nC

April 6,2022 PSMB032N08NS1-REV.00 Page 2 Electrical Characteristics (TA = 25 o C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS(Note 7) VGS=0V, ID=250uA 80 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2.25 3.2 3.75 Drain-Source On-State Resistance (Note 1) RDS(on) VGS=10V, ID=50A - 3 3.4 mΩ VGS=7V, ID=25A - 3.5 5 Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Dynamic (Note 6) Total Gate Charge Qg VDS=40V, ID=50A, VGS=7V - 76 - nC VDS=40V, ID=50A, VGS=10V - 103.5 - Gate-Source Charge Qgs - 34.1 - Gate-Drain Charge Qgd - 20.9 - Input Capacitance Ciss VDS=40V, VGS=0V, F=1MHz - 7430 - pF Output Capacitance Coss - 1483 - Reverse Transfer Capacitance Crss - 89 - Turn-On Delay Time td(on) VDD=40V, ID=50A, VGS=10V, RG=2Ω (Note 2) - 70.6 - ns Turn-On Rise Time tr - 103 - Turn-Off Delay Time td(off) - 122 - Turn-Off Fall Time tf - 48.5 - Gate Resistance Rg f=1.0MHz - 3.2 - Ω Drain-Source Diode Diode Forward Voltage VSD IS=50A, VGS=0V - 0.88 1.2 V Reverse Recovery Charge Qrr IS=50A di/dt=100A/μs - 114 - nC Reverse Recovery Time Trr - 69 - ns NOTES : 1. Pulse width<580us, 2. Essentially independent of operating temperature typical characteristics. 3. The maximum current rating is silicon limited. 4. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper. 5. The test condition is L=1mH, IAS=38A, VDD=40V, VGS=10V, RG=25ohm, Starting TJ=25℃ 6. Guaranteed by design, not subject to production testing. 7. BVDSS is over 85V during mass production.

April 6,2022 PSMB032N08NS1-REV.00 Page 3 Fig.1 Output Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction Temperature Fig.5 Capacitance vs. Drain-Source Voltage Fig.6 On-Resistance vs. Gate-Source Voltage TYPICAL CHARACTERISTIC CURVES 100 150 200 250 300 350 0 1 2 3 VDS- Drain-to-Source Voltage (V) VGS=10V VGS=8V ID-Drain Current (A) VGS=5.5V VGS=6V VGS=7V 100 150 200 250 300 350 0 2 4 6 8 VGS- Gate-to-Source Voltage (V) ID-Drain Current (A) TJ= 25℃TJ=125℃ TJ= -40℃ 4 5 6 7 8 9 10 RDS(on)- On-Resistance (mΩ) TJ=25℃ VGS- Gate-to-Source Voltage (V) ID=50A TJ=-40℃ TJ=125℃ 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 10 20 30 40 50 60 VDS- Drain-to-Source Voltage(V) f=1MHz Ciss Coss Crss Capacitance (pF) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 0 25 50 75 100 125 150 RDS(on)- On-Resistance (Normalized) VGS=10V Temperature (℃) VGS=7V 0 50 100 150 200 250 300 350 RDS(on)- On-Resistance (mΩ) VGS=10V VGS=7V ID- Drain Current (A)

April 6,2022 PSMB032N08NS1-REV.00 Page 4 Fig.7 Gate-Charge Characteristics Fig.8 Breakdown Voltage Variation vs. Temperature Fig.9 Threshold Voltage Variation with Temperature Fig.10 Source-Drain Diode Forward Voltage Fig.11 Maximum Safe Operating Area Fig.12 Normalized Transient Thermal Impedance TYPICAL CHARACTERISTIC CURVES 0 20 40 60 80 100 120Qg(nC) Qg (nC) VGS-Gate-to-Source Voltage (V) VDS=40V ID=50A 0.8 0.9 1.0 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 ID=250uA Temperature (℃) BVDSS- Drain-to-Source Voltage (Normalized) 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 ID=250uA Temperature (℃) VGS(th)-Threshold Voltage (Normalized) 100 TJ=125℃ TJ=25℃ TJ=-40℃ ISD-Source-to-Drain Current (A) VSD-Source-to-Drain Voltage (V) 0.001 0.01 0.1 ZӨJC Normalized Transient Thermal Impedance t, Pulse Width PW (sec) SINGLE PULSE RӨJC=0.8°C/W Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single Notes: Duty = PW / T TJ = TC + PDM x ZӨJC x RӨJC PDM PW D= T PW T 100 1000 0.1 1 10 100 ID-Drain Current (A) VDS- Drain-to-Source Voltage (V) RDS(ON) SINGLE PULSE RӨJC=0.8°C/W TC=25°C

April 6,2022 PSMB032N08NS1-REV.00 Page 5 Fig.13 Drain Current vs. Case Temperature Fig.8 Source-Drain Diode Forward Voltage TYPICAL CHARACTERISTIC CURVES 100 120 140 160 180 25 50 75 100 125 150 ID-Drain Current (A) Temperature (℃)

April 6,2022 PSMB032N08NS1-REV.00 Page 6 Product and Packing Information Packaging Information & Mounting Pad Layout TO-263 Dimension Unit: inch(mm) TO-263 Pad Layout Unit: inch(mm) Marking Diagram Y = Year Code W = Week Code (A~Z) LL = Lot Code (00~99) x = Production Line Code Part No. Package Type Packing Type Marking PSMB032N08NS1 TO-263 50pcs / Tube 800pcs / Reel 032N08NS PJ 032N08NS YWLL x

April 6,2022 PSMB032N08NS1-REV.00 Page 7 Disclaimer

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