PS9905_V01 RENESAS | Alldatasheet
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R08DS0058EJ0200 Rev.2.00 Page 1 of 19 Jun. 30, 2021 Data Sheet PS9905
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN LSDIP PHOTOCOUPLER
FOR CREEPAGE DISTANCE OF 15 mm
DESCRIPTION
The PS9905 is optically coupled isolator containing an AlGaAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
FEATURES
Long creepage distance (15 mm MIN.) Large peak output current (2.5 A MAX., 2.0 A MIN.) High speed switching (tPLH, tPHL = 0.15 s MAX.) UVLO (Under Voltage Lock Out) protection with hysteresis High common mode transient immunity (CMH, CML = 25 kV/s MIN.) 8-pin LSDIP (Long Creepage SDIP) type Embossed tape product: PS9905-F3: 1 000 pcs/reel Pb-Free Product Safety standards UL approved: UL1577, Double protection CSA approved: CAN/CSA-C22.2 No.62368-1, Reinforced insulation SEMKO approved (Creepage Distance:14.5 mm *): EN 62368-1, IEC 62368-1, Reinforced insulation * Creepage Distance:15 mm – in process VDE approved: DIN EN 60747-5-5 (Option)
APPLICATIONS
IGBT, Power MOS FET Gate Driver Industrial inverter Solar inverter R08DS0058EJ0200 Rev.2.00 Jun. 30, 2021 Start of mass production Jun.2012
R08DS0058EJ0200 Rev.2.00 Page 2 of 19 Jun. 30, 2021 PACKAGE DIMENSIONS (UNIT: mm) Weight: 0.642g (typ.) PHOTOCOUPLER CONSTRUCTION Parameter MIN. Air Distance 14.5 mm Creepage Distance 15 mm Isolation Distance 0.4 mm
R08DS0058EJ0200 Rev.2.00 Page 3 of 19 Jun. 30, 2021 FUNCTIONAL DIAGRAM MARKING EXAMPLE
R08DS0058EJ0200 Rev.2.00 Page 4 of 19 Jun. 30, 2021
ORDERING INFORMATION
Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number*1 PS9905 PS9905-Y-AX Pb-Free (Ni/Pd/Au) 10 pcs (Tape 10 pcs cut) Standard products (UL, CSA, SEMKO approved) PS9905 PS9905-F3 PS9905-Y-F3-AX Embossed Tape 1 000 pcs/reel PS9905-V PS9905-Y-V-AX 10 pcs (Tape 10 pcs cut) UL, CSA, SEMIKO, DIN EN60747-5-5 approved PS9905-V-F3 PS9905-Y-V-F3-AX Embossed Tape 1 000 pcs/reel Note: *1. For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current I F 25 mA Peak Transient Forward Current (Pulse Width < 1 s) IF (TRAN) 1.0 A Reverse Voltage V R 5 V Power Dissipation *1, *6 P D 45 mW Detector High Level Peak Output Current*2 IOH (PEAK) 2.5 A Low Level Peak Output Current*2 IOL (PEAK) 2.5 A Supply Voltage (V CC - VEE) 0 to 35 V Output Voltage V O 0 to V CC V Power Dissipation *3, *6 P C 250 mW Isolation Voltage *4 BV 7 500 Vr.m.s. Operating Frequency *5 f 50 kHz Operating Ambient Temperature T A 40 to +110 C Storage Temperature T stg 55 to +125 C Notes: *1. Derating to be set after 0.8 mW/C at TA = 85 C or more. *2. Maximum pulse width = 10 s, Maximum duty cycle = 0.2 % *3. Reduced to 5.2 mW/C at TA = 85 C or more *4. AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. Pins 1-4 shorted together, 5-8 shorted together. *6. Mounted on glass epoxy substrate of 75 mm 115 mm t1.5 mm RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (V CC - VEE) 15 30 V Forward Current (ON) I F (ON) 10 12 14 mA Forward Voltage (OFF) V F (OFF) 2 0.8 V Operating Ambient Temperature TA 40 110 C
R08DS0058EJ0200 Rev.2.00 Page 5 of 19 Jun. 30, 2021
ELECTRICAL CHARACTERISTICS
(VEE = GND, unless otherwise specified and refer to RECOMMENDED OPERATING CONDITIONS) Parameter Symbol Conditions MIN. TYP. *1 MAX. Unit Diode Forward Voltage V F I F = 10 mA, TA = 25 C 1.3 1.56 1.8 V Reverse Current I R V R = 3 V, TA = 25 C 10 A Terminal Capacitance C t f = 1 MHz, VF = 0 V, TA = 25 C 30 pF Detector High Level Output Current IOH V O = (VCC 4 V) *2 0.5 2.0 A V O = (VCC 15 V) *3 2.0 Low Level Output Current IOL V O = (VEE + 2.5 V) *2 0.5 2.0 A V O = (VEE + 15 V) *3 2.0 High Level Output Voltage VOH I O = 100 mA *4 VCC 3.0 VCC 1.5 V Low Level Output Voltage VOL I O = 100 mA 0.1 0.5 V High Level Supply Current ICCH V O = open, IF = 12 mA 1.4 3.0 mA Low Level Supply Current ICCL V O = open, VF = 2 to +0.8 V 1.3 3.0 mA UVLO Threshold V UVLO+ VO > 5 V, IF = 12 mA 10.8 12.3 13.4 V V UVLO 9.5 11.0 12.5 UVLO Hysteresis UVLO HYS VO > 5 V, IF = 12 mA 0.4 1.3 V Coupled Threshold Input Current (L H) IFLH I O = 0 mA, VO > 5 V 2.9 6.0 mA Threshold Input Voltage (H L) VFHL I O = 0 mA, VO < 5 V 0.8 V Notes: *1. Typical values at TA = 25 C *2. Maximum pulse width = 50 s, Maximum duty cycle = 0.5 %. *3. Maximum pulse width = 10 s, Maximum duty cycle = 0.2 %. *4. VOH is measured with the DC load current in this testing (Maximum pulse width = 2 ms, Maximum duty cycle = 20 %).
R08DS0058EJ0200 Rev.2.00 Page 6 of 19 Jun. 30, 2021 SWITCHING CHARACTERISTICS (VEE = GND, unless otherwise specified and refer to RECOMMENDED OPERATING CONDITIONS) Parameter Symbol Conditions MIN. TYP. *1 MAX. Unit Propagation Delay Time (L H) tPLH R g = 10 , Cg = 10 nF*2, f = 10 kHz, 0.09 0.15 s Propagation Delay Time (H L) tPHL Duty Cycle = 50 %, IF = 12 mA 0.1 0.15 s Pulse Width Distortion (PWD) |tPHLtPLH| 0.01 0.075 s Propagation Delay Time (Difference Between Any Two Products) tPHLtPLH 0.1 0.1 s Rise Time t r 50 ns Fall Time t f 50 ns UVLO (Turn On Delay) t UVLO ON VO > 5 V, IF = 12 mA 0.8 s UVLO (Turn Off Delay) t UVLO OFF VO < 5 V, IF = 12 mA 0.6 s Common Mode Transient Immunity at High Level Output |CMH| T A = 25 C, IF = 12 mA, VCC = 30 V, VO (MIN.) = 26 V, VCM = 1.5 kV 25 kV/ s Common Mode Transient Immunity at Low Level Output |CML| T A = 25 C, IF = 0 mA, VCC = 30 V, VO (MAX.) = 1 V, VCM = 1.5 kV 25 kV/ s Notes: *1. Typical values at TA = 25 C *2. This load condition is equivalent to the IGBT load at 1 200 V / 75 A.
R08DS0058EJ0200 Rev.2.00 Page 7 of 19 Jun. 30, 2021 TEST CIRCUIT VC C =15 to 30 V2.5 V0.1 F12348765IOL (VC C-4)V VC C =15 to 30 V VC C =15 to 30 Vµ µ µµ µ
R08DS0058EJ0200 Rev.2.00 Page 8 of 19 Jun. 30, 2021 VC C = 15 to 30 VIF = 12 mA10 kHz50% DU T YC Y C LE0.1 Fµ µ 12348765VO500Ω 10Ω10 nFtP HLtPLHIFVOUT90 %50 %10 %trtfVC C = 30 VVC M = 1.5 kV0.1 F1AB2348765VOIF VOH26 V1 VVOLVCM0 VVO(S witch A: IF = 12 mA)VO(S witch B : IF = 0 mA) Fig. 7 tPLH, tP HL, tr, tf Test C ircuit and Wave FormsFig. 8 C MR Test C ircuit and Wave FormsDt=dVdtVCMDtS HIE LDS HIE LD+ -
R08DS0058EJ0200 Rev.2.00 Page 9 of 19 Jun. 30, 2021 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified) Remark The graphs indicate nominal characteristics. Ambient T emperature TA (°C)Diode P ower Dissipation PD (mW)DIODE P OWE R DIS S IP ATION vs. AMBIE NT TE MP E R ATUR EAmbient T emperature TA (°C)Detector P ower Dissipation PC (mW)DE TE C TOR P OWE R DIS S IP ATION vs. AMBIE NT TE MP E R ATUR E VCC = 30 V,VE E = GND,VO > 5 VTA = 25 °C,VCC = 30 V,VE E = GNDVCC = 30 V,VE E = GND,IF = 12 mATA = +110 °C2.4
R08DS0058EJ0200 Rev.2.00 Page 10 of 19 Jun. 30, 2021 Remark The graphs indicate nominal characteristics. F orward C urrent IF (mA)P R OP AG ATION DE LAY TIME ,P ULS E WIDTH DIS TOR TIONvs. F OR WAR D C UR R E NTP R OP AG ATION DE LAY TIME ,P ULS E WIDTH DIS TOR TION vs. S UP P LY VOLTAGES upplyV oltage VC C(V)Low Level Output C urrent IOL(A)Low Level Output V oltage VOL(V)LOW LE VE L OUTP UT VOLTAGE vs.LOW LE VE L OUTP UT C UR R E NTP ropagation Delay Time tPHL, tPLH (ns),P ulseWidth Distortion (P WD) tPHL – tPLH (ns) P R OP AGATION DE LAY TIME ,P ULS E WIDTH DIS TOR TIONvs. LOAD R E S IS TANC E0 10 20 30 40 50150100500Load R esistance Rg (Ω)P ropagation Delay Time tPHL, tPLH (ns),P ulseWidth Distortion (P WD) tPHL – tPLH(ns)P ropagation Delay T ime tPHL, tPLH (ns),P ulseWidth Distortion (P WD) tPHL – tPLH(ns)P R OP AG ATION DE LAY TIME ,P ULS E WIDTH DIS TOR TIONvs. AMBIE NT TE MP E R ATUR EAmbient T emperature TA (°C )0-40 -20 2040 60 80150100500100 -40 °C+25 °CVCC = 30 V,VE E = GND,IF = 0 mATA = +110 °C TA = 25 °C , IF = 12 mA,VCC = 30 V, Cg = 10 nF,f = 10 kHz, Duty cycle = 50 %PWDtPLHtPHLIF = 12 mA, VCC = 30 V,Rg = 10Ω, Cg = 10 nF,f = 10 kHz, Duty cycle = 50 %PWDtPLHtPHLTA = 25 °C , IF = 12 mA,VCC = 30 V, Rg = 10Ω,f = 10 kHz, Duty cycle = 50 %PWDtPLHtPHLTA = 25 °C , IF = 12 mA,Rg = 10Ω, Cg = 10 nF,f = 10 kHz, Duty cycle = 50 %P WDtPLHtPHLTA = 25 °C , VCC = 30 V,Rg = 10Ω, Cg = 10 nF,f = 10 kHz, Duty cycle = 50 %PWDtPLHtPHL
R08DS0058EJ0200 Rev.2.00 Page 11 of 19 Jun. 30, 2021 Remark The graphs indicate nominal characteristics.
R08DS0058EJ0200 Rev.2.00 Page 12 of 19 Jun. 30, 2021 Remark The graphs indicate nominal characteristics. OUTP UT VOLTAG E vs. S UP P LY VOLTAG ES upplyV oltage VC C –VE E(V)OutputVoltageVO(V)0 5 10 152014121086420TA = 25 °C,IF = 12 mAVUVLO+(12.3 V)UVLOHY SVUVLO+(12.3 V)VUVLO–(11.0 V)
R08DS0058EJ0200 Rev.2.00 Page 13 of 19 Jun. 30, 2021 TAPING SPECIFICATIONS (UNIT: mm)
R08DS0058EJ0200 Rev.2.00 Page 14 of 19 Jun. 30, 2021 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) Remark All dimensions in this figure must be evaluated before use. 【8pin LSDIP】 20.91.2716.6
R08DS0058EJ0200 Rev.2.00 Page 15 of 19 Jun. 30, 2021 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering
- Peak reflow temperature 260 C or below (package surface temperature)
- Time of peak reflow temperature 10 seconds or less
- Time of temperature higher than 220 C 60 seconds or less
- Time to preheat temperature from 120 to 180 C 120 30 s
- Number of reflows Three
- Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (2) Wave soldering
- Temperature 260 C or below (molten solder temperature)
- Time 10 seconds or less
- Preheating conditions 120 C or below (package surface temperature)
- Number of times One (Allowed to be dipped in solder including plastic mold portion.)
- Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron
- Peak Temperature (lead part temperature) 350 C or below
- Time (each pins) 3 seconds or less
- Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (b) Please be sure that the temperature of the package would not be heated over 110 C (4) Cautions
- Flux Cleaning Avoid cleaning with Freon based or halogen-based (chlorinated etc.) solvents.
- Do not use fixing agents or coatings containing halogen-based substances. 220°C P ackage S urface Temperature T (°C )Time (s)(heating)to 10 sto 60 s260°C MAX.R ecommended Temperature P rofile of Infrared R eflow120±30 s(preheating)180°C120°C
R08DS0058EJ0200 Rev.2.00 Page 16 of 19 Jun. 30, 2021 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. USAGE CAUTIONS 1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 0.1 F is used between VCC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close to the input block pattern of the photocoupler. If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) Pin 1, 4 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open. Also, Pin 6 (which is an NC*1 pin) can either be connected directly to the GND pin on the detector side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. Note: *1. NC: Non-Connection (No Connection) 3. Make sure the rise/fall time of the forward current is 0.5 s or less. 4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/s or less. 5. Avoid storage at a high temperature and high humidity.
R08DS0058EJ0200 Rev.2.00 Page 17 of 19 Jun. 30, 2021 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Rating Unit Climatic test class (IEC 60068-1/DIN EN 60068-1) 40/110/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.6 UIORM., Pd 5 pC UIORM Upr 1 600 2 560 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 UIORM., Pd 5 pC Upr 3 000 V peak Highest permissible overvoltage U IOTM 12 000 V peak Degree of pollution (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)) 2 Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175 Material group (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)) III a Storage temperature range T stg –55 to +125 °C Operating temperature range T A –40 to +110 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN. Ris MIN. 1012 1011 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi Tsi Isi Psi Ris MIN. 175 400 700 109 mA mW Dependence of maximum safety ratings with package temperature 010020030040050060070080090010000 25 50 75 100 125 150 175 200Package temp Tsi (°C)Total Power Dissipation Psi (mW)Input Current Isi (mA)Psi: Total Power DissipationIsi: Input Current
R08DS0058EJ0200 Rev.2.00 Page 18 of 19 Jun. 30, 2021 Method a Destructive Test, Type and Sample Test Method b Non-destructive Test, 100% Production Test t1tinit2t3tmt4UIOTM=12000VUpr =2560VUIORM =1600VV tt1,t2= 1 to 10 sect3,t4= 1 sectm(PARTIAL DISCHARGE)= 10 secttest = 12 sectini = 60 secttestUpr =3000VUIORM =1600Vt3t4Vt3,t4= 0.1 sectm(PARTIAL DISCHARGE)= 1.0 secttest = 1.2 secttestttm
R08DS0058EJ0200 Rev.2.00 Page 19 of 19 Jun. 30, 2021 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.
- Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
- Do not burn, destroy, cut, crush, or chemically dissolve the product.
- Do not lick the product or in any way allow it to enter the mouth.
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