PS9661 NEC | Alldatasheet

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Technical content

DESCRIPTION

NEC’s PS9661 and PS9661L are optically coupled isolators containing a GaAlAs LED on the input side and a CMOS output IC on the output side. These photocouplers are high common mode transient immunity (CMR), high-speed CMOS output type devices, making them ideal for high-speed logic interface circuits. The PS9661 is in a plastic DIP (Dual In-line Package) and the PS9661L is lead bending type (Gull-wing) for surface mounting.

FEATURES

  • High-speed response (25 Mbps)
  • High common mode transient immunity (CMH, CML = ±20 kV/µs TYP.)
  • High isolation voltage (BV = 3 750 Vr.m.s.)
  • Pulse width distortion ( |tPHL − tPLH| = 3 ns TYP.)
  • Ordering number of tape product: PS9661L-E3, E4: 1 000 pcs/reel

APPLICATIONS

  • Factory Automation Network
  • Measurement equipment
  • PDP PS9661 PS9661L PRELIMINARY DATA SHEET NEC's HIGH NOISE REDUCTION

25 Mbps CMOS OUTPUT TYPE

California Eastern Laboratories The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version .

PACKAGE DIMENSIONS (UNIT: mm) PS9661 9.25±0.25 6.5±0.5 0 to 15˚ 7.62 TOP VIEW 2.54 0.84±0.43 3.0±5.356.0 3.0±51.4.NIM 8.2 1.25±0.15 0.25 M 0.5±0.1 0.88±0.1 1. VDD1 2. VI 3. LED Anode 4. GND1 5. GND2 6. VO 7. NC 8. VDD2 1 2 43 6 58 7 DLEIHS TOP VIEW PS9661L 6.5±0.5 0.9±0.25 9.60±0.42.54 0.25 M 1.25±0.15 3.0±5.3 9.25±0.25 0.88±0.1 1.0 1.0+ 50.0– 52.0 1.0+ 50.0– 1. VDD1 2. VI 3. LED Anode 4. GND1 5. GND2 6. VO 7. NC 8. VDD2 1 2 43 6 58 7 DLEIHS PS9661, PS9661L Preliminary Data Sheet

No. 1 pin Mark M Week Assembled Year Assembled (Last 1 Digit) Rank Code 3 01 Country Assembled Type Number Assembly Lot PS9661, PS9661L Preliminary Data Sheet

ORDERING INFORMATION

Part Number Package Packing Style PS9661 8-pin DIP Magazine case 50 pcs PS9661L PS9661L-E3 Embossed Tape 1 000 pcs/reel PS9661L-E4 ABSOLUTE MAXIMUM RATINGS (TA = 25°°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Input Voltage VI −0.5 to VDD1+0.5 V Detector Supply Voltage VDD1, VDD2 0 to 5.5 V Output Voltage VO −0.5 to VDD2+0.5 V Output Current IO 10 mA Isolation Voltage BV 3 750 Vr.m.s. Total Power Dissipation PT 150 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −40 to +125 °C *1 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. RECOMMENDED OPERATING CONDITIONS (TA = 25°°C) Parameter Symbol MIN. TYP. MAX. Unit High Level Input Voltage VIH 2.0 VDD1 V Low Level Input Voltage VIL 0 0.8 V Supply Voltage VDD1, VDD2 4.5 5.0 5.5 V Rise Time tr 100 ns Fall Time tf PS9661, PS9661L Preliminary Data Sheet

ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions Unless Otherwise Specified. Note That VDD1 = VDD2 = 5 V.) Parameter Symbol Conditions MIN. TYP. MAX. Unit Fig. Diode Low Level Supply Current IDD1L VI = 0 V 7.5 10.0 1 High Level Supply Current IDD1H VI = VDD1 0.15 3.0 mA Input Current II VI = 0 V or VI = VDD1 −10 10 µA 3, 4 Detector Output Supply Current IDD2H VI = VDD1 7 9 5 IDD2L VI = 0 V 5 9 mA IO = −20 µA, VI = VIH 4.4 5.0 7High Level Output Voltage VOH IO = −4 mA, VI = VIH 4.0 4.8 IO = 20 µA, VI = VIL 0.01 0.1 V 8Low Level Output Voltage VOL IO = 4 mA, VI = VIL 0.32 1.0 Coupled Isolation Resistance RI-O VI-O = 1 kVDC, RH = 40 to 60%, TA = 25°C Ω Isolation Capacitance CI-O V = 0 V, f = 1 MHz, TA = 25°C 1.3 pF Propagation Delay Time (H → L) tPHL CL = 15 pF, CMOS Signal Levels 20 40 9 Propagation Delay Time (L → H) tPLH 23 40 Pulse Width PW 40 Pulse Width Distortion (PWD) | tPHL-tPLH| 3 8 Propagation Delay Skew tPSK 20 Rise Time tr 9 Fall Time tf 8 ns Common Mode Transient Immunity at High Level Output CMH VI = VDD1 = VDD2 = 5V, VO > 0.8 VDD1, VCM = 1 kV, TA = 25°C 10 20 10 Common Mode Transient Immunity at Low Level Output CML VI = VDD1 = VDD2 = 5V, VI =0V VO < 0.8 VDD1, VCM = 1 kV 10 20 kV/µs *1 Typical values at TA = 25°C PS9661, PS9661L Preliminary Data Sheet

  1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. By-pass capacitor of more than 0.1 µF is used between VDD and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. PS9661, PS9661L Preliminary Data Sheet

MEASUREMENT CIRCUITS FOR ELECTRICAL CHARACTERISTICS VDD1 A VDD1 A VDD1 A 1 VDD1 A VDD2VDD1 A 1 VDD2VDD1 A VDD2VDD1 VIH V IO VDD2VDD1 VIL V IO Fig. 1 IDD1L Fig. 2 IDD1H Fig. 3 IIH Fig. 4 IIL Fig. 5 IDD2H Fig. 6 IDD2L Fig. 7 VOH Fig. 8 VOL PS9661, PS9661L Preliminary Data Sheet

Fig. 9 tPHL/tPLH VDD2VDD1 VI CL VO INPUT VI OUTPUT VO 50 % tPLH tPHL 0 V

5 V CMOS

2.5 V CMOS

90 % 10 % 90 % 10 % PW = 40 ns Fig. 10 CMH/CML 0.1uF VDD2 VO VOH VOL 0.1uF 0.1uF VCM SW : B 0.8 V

0.8 VDD

SW : A 1kVVCM PS9661, PS9661L Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. A Business Partner of NEC Compound Semiconductor Devices, Ltd. 07/23/2004 Preliminary Data Sheet