PS9634 NEC | Alldatasheet

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The information in this document is subject to change without notice. Document No. P12686EJ4V0DS00 (4th edition) Date Published February 1998 NS CP(K) Printed in Japan PHOTOCOUPLER PS9634,PS9634L POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER © 1992 The mark  shows major revised points.

DESCRIPTION

The PS9634 and PS9634L are optical linkage devices mounting a GaAs infrared ray LED on the light emitting side (input side) and a photo diode and a signal processing circuit on the light receiving side (output side) on one chip. They can directly drive a power transistor of 15 to 20 A class used for such as an inverter control air conditioner or general purpose inverter. The PS9634L has a surface mount type lead.

FEATURES

  • High instantaneous common mode rejection voltage (CMH = –1 000 V/µs MIN., CML = 1 000 V/µs MIN.)
  • High supply voltage (VCC = 18 V)
  • High-speed response (tPHL , tPLH = 5 µs MAX.)
  • High output current (IO1 = 0.5 A (DC), IO1P = 1.0 A (pulse) )
  • Taping product name (PS9634L-E3, E4)

APPLICATIONS

  • Inverter control air conditioner
  • General purpose inverter

PS9634,PS9634L PACKAGE DIMENSIONS (in millimeters) 10.16 MAX. 2.54 0.25 M 1.34±0.10 1.27 MAX. 3.8 MAX. PS9634L 6.5±0.5 0.9±0.25 9.60±0.4 0.05 to 0.2 7.62 PS9634 10.16 MAX. 6.5±0.5 0 to 15˚ 7.62 2.54 3.8 MAX.0.65 1.27 MAX. 4.55 MAX.2.8 MIN. 1.340.25 M 0.50±0.10 1. Anode 2. Cathode 3. NC 4. NC 5. Output (O1) 6. Output (O2) 7. GND 8. V CC 1234 8765 Tr.1 Tr.2 Signal processing circuit TOP VIEW 1. Anode 2. Cathode 3. NC 4. NC 5. Output (O1) 6. Output (O2) 7. GND 8. V CC 1234 8765 Tr.1 Tr.2 Signal processing circuit TOP VIEW

PS9634,PS9634L ABSOLUTE MAXIMUM RATINGS (T A = 25 °°°°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current (DC) I F 30 mA Reverse Voltage V R 6.0 V Peak Forward Current IFM 1A Detector Supply Voltage V CC 18 V Output Current (O1) I O1 0.5 A Peak Output Current (O1) IO1P 1.0 Output Current (O2) I O2 0.8 Peak Output Current (O2) IO2P 2.0 Output Voltage (O1) V O1 18 V Power Dissipation P O 500 mW Isolation Voltage BV 5 000 Vr.m.s. Total Power Dissipation P T 550 mW Operating Ambient Temperature T A −20 to +80 °C Storage Temperature T stg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output RECOMMENDED OPERATING CONDITIONS TRUTH TABLE Parameter Symbol MIN. TYP. MAX. Unit LED Input On Current I FLH 6 8 10 mA ON OFF Supply Voltage V CC 5.4 15 V Tr. 1 ON OFF Output Current (O1) I O1 0.1 0.2 0.3 A Tr. 2 OFF ON Output Current (O2) I O2 Operating Ambient Temperature T A 02 5 5 0 °C

PS9634,PS9634L ELECTRICAL CHARACTERISTICS (T A = −−−−20 to +80 °°°°C, unless otherwise specified) Parameter Symbol Conditions MIN. TYP. MAX. Unit Fig. Diode Forward Voltage V F IF = 5 mA, TA = 25 °C1 . 1 1 . 4 V Reverse Current I R VR = 5 V, TA = 25 °C5 µA Terminal Capacitance C t V = 0 V, f = 1.0 MHz, TA = 25 °C3 0 p F Detector Supply Voltage V CC 5.4 15 V Low Level Output Voltage (O1) VO1L VCC = 6 V, IO1 = 0.4 A, RL2 = 10 Ω , IF = 5 mA 0.25 0.40 V 1 High Level Output Voltage (O2) VO2H VCC = 6 V, IO2 = −0.4 A, IF = 5 mA 4.5 5.0 V 2 Low Level Output Voltage (O2) VO2L VCC = 6 V, IO2 = 0.5 A, IF = 0 mA 0.25 0.40 V Leakage Current (O1) I O1L VCC = 13 V, IF = 0 mA 100 µA3 Leakage Current (O2) I O2L VCC = 13 V, IF = 5 mA 100 µA4 High Level Supply Current ICCH TA = 25 °C8 1 2 m A VCC = 6 V, IF = 5 mA 16 Low Level Supply Current ICCL TA = 25 °C1 5 1 8 m A VCC = 6 V, IF = 0 mA 22 Coupled I nput On Current (L → H) I FLH TA = 25 °C 0.3 1.5 3.0 mA 5 VCC = 6 V, RL1 = 5 Ω , RL2 = 10 Ω 0.2 5.0 Isolation Resistance R I-O RH = 40 to 60 %, TA = 25 °C1 0 Ω Propagation Delay Time (L → H) tPLH VCC = 6 V, IF = 5 mA, TA = 25 °C R L1 = 5 Ω , RL2 = 10 Ω 35 µs6 Propagation Delay Time (H → L) tPHL Instantaneous Common Mode Rejection Voltage (Output: High) CM H TA = 25 °C, VCM = 600 V (peak), IF = 5 mA, RL1 = 470 Ω , RL2 = 1 kΩ, ΔV02H = 2 V −1 000 V/ µs7 Instantaneous Common Mode Rejection Voltage (Output: Low) CM L TA = 25 °C, VCM = 600 V (peak), IF = 0 mA, RL1 = 470 Ω , RL2 = 1 kΩ, ΔV02L = 0.5 V 1 000 V/ µs

PS9634,PS9634L MEASUREMENT CIRCUITS FOR ELECTRICAL CHARACTERISTICS Fig. 1 VO1L VCC IF IO1 R L2 = 10 Ω VO1L V Fig. 4 IO2L VCC IF IO2L A Fig. 2 VO2H VCC IF VO2H V IO2 Fig. 3 IO1L VCC IF IO1LA Fig. 5 IFLH VCC IF variable R L2 = 10 Ω R L1 = 5 Ω

6 VVO2

V Fig. 6 tPLH , tPHL VCC VIN R L2 = 10 Ω 51 Ω VOUT R L1 = 5 Ω (tr, tf = 0.01 s)µ VIN VOUT 50 % 50 % tPLH tPHL Fig. 7 CMH , CML VCM GND VO2 CM H (IF = 5 mA) CM L (IF = 0 mA) 0.5 V 2 V 600 V SW VCM R L1 = 470 Ω R L2 = 1 kΩ VCC VO2 IF

PS9634,PS9634L TYPICAL CHARACTERISTICS (T A = 25 °°°°C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE Maximum Forward Current IF (mA) Ambient Temperature TA (˚C) 0 25 50 75 100 80 POWER DISSIPATION vs. AMBIENT TEMPERATURE Power Dissipation PO (mW) Ambient Temperature TA (˚C) 600 400 300 100 500 200 25 50 75 100 80 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation PT (mW) Ambient Temperature TA (˚C) 600 400 300 100 500 200 550 25 50 75 100 80 1.3 1.2 1.1 0.9 0.8 1.0 –20 20 60 8004 0 NORMALIZED INPUT ON CURRENT vs. AMBIENT TEMPERATURE Ambient Temperature TA (˚C) Normalized Input On Current IFLH Normalized to 1.0 at TA = 25 ˚C, VCC = 6 V FORWARD CURRENT vs. FORWARD VOLTAGE Forward Current IF (mA) Forward Voltage VF (V) 100 0.1 0.01 TA = +100 ˚C +75 ˚C +50 ˚C +25 ˚C 0 ˚C –25 ˚C –55 ˚C VCC = 6 V NORMALIZED INPUT ON CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Normalized Input On Current IFLH 1.5 1.0 0.5 0.0 28 1 641 2 61 0 1 4 1 8

PS9634,PS9634L HIGH LEVEL SUPPLY CURRENT vs. SUPPLY VOLTAGE High Level Supply Current ICCH (mA) Supply Voltage VCC (V) 81 0 1 4 1 846 12 16 TA = –20 ˚C +25 ˚C +80 ˚C LOW LEVEL SUPPLY CURRENT vs. SUPPLY VOLTAGE Low Level Supply Current ICCL (mA) Supply Voltege VCC (V) 22.5 20.0 15.0 12.5 7.5 17.5 10.0 41 2 1 6 1 86 8 10 14 TA = –20 ˚C +25 ˚C +80 ˚C LOW LEVEL OUTPUT VOLTAGE (O1) vs. OUTPUT CURRENT (O1) Low Level Output Voltage (O1) VO1L (V) Output Current (O1) IO1 (A) 100 10–1 10–2 10–3 10–2 10–1 100 VCC = 6 V LOW LEVEL OUTPUT VOLTAGE (O1) vs. AMBIENT TEMPERATURE Low Level Output Voltage (O1) VO1L (V) Ambient Temperature TA (˚C) 0.35 0.25 0.15 0.05 0.00 0.30 0.20 0.10 02 0 6 0 8 0–20 40 V CC = 6 V IO1 = 0.5 A 0.1 A 0.3 A LOW LEVEL OUTPUT VOLTAGE (O2) vs. OUTPUT CURRENT (O2) Low Level Output Voltage (O2) VO2L (V) Output Current (O2) IO2 (A) 100 10–1 10–2 10–3 10–2 10–1 100 VCC = 6 V LOW LEVEL OUTPUT VOLTAGE (O2) vs. AMBIENT TEMPERATURE Low Level Output Voltage (O2) VO2L (V) Ambient Temperature TA (˚C) 0.5 0.4 0.2 0.1 0.0 0.3 04 0 6 0 8 0–20 20 VCC = 6 V 0.4 A 0.1 A IO2 = 0.6 A

PS9634,PS9634L HIGH LEVEL OUTPUT VOLTAGE (O2) vs. OUTPUT CURRENT (O2) High Level Output Voltage (O2) VO2H (V) Output Current (O2) IO2 (A) 5.5 5.0 4.5 4.0 VCC = 6 V HIGH LEVEL OUTPUT VOLTAGE (O2) vs. AMBIENT TEMPERATURE High Level Output Voltage (O2) VO2H (V) Ambient Temperature TA (˚C) 5.3 5.0 4.5 5.2 5.1 4.9 4.8 4.7 4.6 –20 40 8002 0 6 0 VCC = 6 V IO2 = –0.1 A –0.4 A –0.6A VCC = 6 V, IF = 5 mA, R L1 = 5 Ω , RL2 = 10 Ω tPHL tPLH 5.0 4.0 3.0 2.0 4.5 3.5 2.5 08 0–20 20 40 60 PROPAGATION DELAY TIME vs. AMBIENT TEMPERATURE Ambient Temperature TA (˚C) Propagation Delay Time tPLH /tPHL ( s)µ *1 One pulse *2 On the epoxy board SAFE OPERATING AREA (Tr.1) Output Current (O2) IO2 (A) Output Voltage (O2) VO2 (V) 0.1 0.5 0.2 15 3 00.3 2 3 100.5 20 IO2 MAX. (DC) IO2 MAX. (Pulse) DC (T A = 80 ˚C) DC 1 s*1 100 ms 10 ms 1 ms VCC MAX. 52 0 3 001 0 1 5 2 5 PROPAGATION DELAY TIME vs. FORWARD CURRENT Forward Current IF (mA) Propagation Delay Time tPLH /tPHL ( s)µ VCC = 6 V, R L1 = 5 Ω , R L2 = 10 Ω TA = +80 ˚C +25 ˚C–20 ˚C tPLH tPHL Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.

PS9634,PS9634L TAPING SPECIFICATIONS (in millimeters) Tape Direction PS9634L-E3 PS9634L-E4 Outline and Dimensions (Tape) 1.55±0.1 2.0±0.1 4.0±0.1 1.55±0.1 1.75±0.1 4.3±0.2 10.3±0.1 0.3 7.5±0.1 16.0±0.3 10.4±0.1 12.0±0.1 Outline and Dimensions (Reel) Packing: 1 000 pcs/reel 16.4+2.0–0.0 80.0±5.0φ 330φ 2.0±0.5 R 1.0 13.0±0.5φ 21.0±0.8φ

PS9634,PS9634L RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering

  • Peak reflow temperature 235 °C (package surface temperature)
  • Time of temperature higher than 210 °C 30 seconds or less
  • Number of reflows Three
  • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 60 to 90 s (preheating) 210 ˚C 120 to 160 ˚C Package Surface Temperature T (˚C) Time (s) (heating) to 10 s to 30 s 235 ˚C (peak temperature) Recommended Temperature Profile of Infrared Reflow Peak temperature 235 ˚C or below Caution Please avoid to removed the residual flux by water after the first reflow processes. (2) Dip soldering
  • Temperature 260 °C or below (molten solder temperature)
  • Time 10 seconds or less
  • Number of times One
  • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)

PS9634,PS9634L APPLICATION EXAMPLE OF PHOTOCOUPLER (TO POWER TRANSISTOR MODULE) VIN IO IO2P t t IO1 PS9634, PS9634L VCC Input VIN TTL or the like Load IO Power transistor module VCC

PS9634,PS9634L CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5