PS9305L-V

PS9305L RENESAS | Alldatasheet

Document overview

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Technical content

R08DS0013EJ0200 Rev.2.00 Page 1 of 19 Sep 07, 2011 PIN CONNECTION (Top View) 1. Anode 2. Cathode 3. Cathode 4. NC 5. V EE 6. VEE 7. VO 8. VCC 12 34 87 65 SHIELD The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Preliminary Data Sheet PS9305L,PS9305L2

2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN SDIP PHOTOCOUPLER

DESCRIPTION

The PS9305L and PS9305L2 are optically coupled isolators c ontaining a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS9305L and PS9305L2 are designed specifically for high common mode transient immunity (CMR), high output current and high switching speed. The PS9305L and PS9305L2 are suitable for driving IGBTs and MOS FETs.

FEATURES

• Long creepage distance (8 mm MIN.)
• Large peak output current (2.5 A MAX., 2.0 A MIN.)
• High speed switching (t PLH, tPHL = 0.25 μs MAX.)
• UVLO (Under Voltage Lock Out) protection with hysteresis
• High common mode transient immunity (CM H, CML = ±25 kV/μs MIN.)
• Embossed tape product: PS9305L-E3, PS9305L2-E3: 2 000 pcs/reel
• Pb-Free product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved: No. 1115598
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)

APPLICATIONS

• IGBT, Power MOS FET Gate Driver
• Industrial inverter
• IH (Induction Heating) R08DS0013EJ0200 Rev.2.00 Sep 07, 2011 <R> <R> <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 2 of 19 Sep 07, 2011 PACKAGE DIMENSIONS (UNIT: mm) Lead Bending Type (Gull-wing) for Surface Mount 5.85±0.25 6.8±0.25 (0.82) (7.62) 9.7±0.3 0.84±0.25 0.2±0.15 0.25±0.15 3.5±0.2 3.7±0.25 1.27 0.4±0.1 0.25 M PS9305L Lead Bending Type (Gull-wing) for Long Clearance Distance (Surface Mount) 5.85±0.25 6.8±0.25 (0.82) 3.5±0.2 3.7±0.25 1.27 0.4±0.1 0.25 M 11.5±0.3 0.75±0.25 (7.62) 0.25±0.15 0.2±0.15 PS9305L2 <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 3 of 19 Sep 07, 2011 PHOTOCOUPLER CONSTRUCTION Parameter PS9305L PS9305L2 Air Distance (MIN.) 7 mm 8 mm Outer Creepage Distance (MIN.) 8 mm 8 mm Isolation Distance (MIN.) 0.4 mm 0.4 mm FUNCTIONAL DIAGRAM LED Output ON H OFF Tr. 1 ON OFF Tr. 2 OFF ON L Input H L (Tr. 2) (Tr. 1) SHIELD MARKING EXAMPLE 9305 R N131 1N 31 No. 1 pin Mark Year Assembled (Last 1 Digit) Rank Code Week Assembled Assembly Lot Type Number Company Initial <R> <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 4 of 19 Sep 07, 2011

ORDERING INFORMATION

Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number*1 PS9305L PS9305L-AX 20 pcs (Tape 20 pcs cut) PS9305L-E3 PS9305L-E3-AX Embossed Tape 2 000 pcs/reel PS9305L PS9305L2 PS9305L2-AX 20 pcs (Tape 20 pcs cut) PS9305L2-E3 PS9305L2-E3-AX Embossed Tape 2 000 pcs/reel Standard products (UL, CSA, SEMKO approved) PS9305L2 PS9305L-V PS9305L-V-AX 20 pcs (Tape 20 pcs cut) PS9305L-V-E3 PS9305L-V-E3-AX Embossed Tape 2 000 pcs/reel PS9305L PS9305L2-V PS9305L2-V-AX 20 pcs (Tape 20 pcs cut) PS9305L2-V-E3 PS9305L2-V-E3-AX Pb-Free (Ni/Pd/Au) Embossed Tape 2 000 pcs/reel DIN EN60747-5-2 (VDE0884 Part2) approved (Option) PS9305L2 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current IF 25 mA Peak Transient Forward Current (Pulse Width < 1 μs) IF (TRAN) 1.0 A Reverse Voltage VR 5 V Power Dissipation PD 45 mW Detector High Level Peak Output Current IOH (PEAK) 2.5 A Low Level Peak Output Current IOL (PEAK) 2.5 A Supply Voltage (VCC - VEE) 0 to 35 V Output Voltage VO 0 to VCC V Power Dissipation PC 250 mW Isolation Voltage BV 5 000 Vr.m.s. Operating Frequency f 50 kHz Operating Ambient Temperature TA −40 to +110 °C Storage Temperature Tstg −55 to +125 °C *1 Reduced to 0.88 mW/ °C at TA = 85°C or more. *2 Maximum pulse width = 10 μs, Maximum duty cycle = 0.2% *3 Reduced to 7.36 mW/ °C at TA = 85°C or more. *4 AC voltage for 1 minute at T A = 25°C, RH = 60% between input and output. Pins 1-4 shorted together, 5-8 shorted together. *5 I OH (PEAK) ≤ 2.0 A (≤ 0.3 μs), IOL (PEAK) ≤ 2.0 A (≤ 0.3 μs) RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (VCC - VEE) 15 30 V Forward Current (ON) IF (ON) 7 10 16 mA Forward Voltage (OFF) VF (OFF) −2 0.8 V Operating Ambient Temperature TA −40 110 °C <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 5 of 19 Sep 07, 2011

ELECTRICAL CHARACTERISTICS

(VEE = GND, unless otherwise specified and refer to RECOMMENDED OPERATING CONDITIONS) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage VF IF = 10 mA, TA = 25°C 1.2 1.56 1.8 V Reverse Current IR VR = 3 V, TA = 25°C 10 μA Terminal Capacitance Ct f = 1 MHz, VF = 0 V, TA = 25°C 30 pF Detector High Level Output Current IOH VO = (VCC − 4 V) 0.5 2.0 A VO = (VCC − 15 V) 2.0 Low Level Output Current IOL VO = (VEE + 2.5 V) 0.5 2.0 A VO = (VEE + 15 V) 2.0 High Level Output Voltage VOH IO = −100 mA VCC − 3.0 VCC − 1.5 V Low Level Output Voltage VOL IO = 100 mA 0.1 0.5 V High Level Supply Current ICCH VO = open, IF = 10 mA 1.4 3.0 mA Low Level Supply Current ICCL VO = open, VF = 0 to +0.8 V 1.3 3.0 mA UVLO Threshold VUVLO+ VO > 5 V, IF = 10 mA 10.8 12.3 13.4 V VUVLO− 9.5 11.0 12.5 UVLO Hysteresis UVLOHYS VO > 5 V, IF = 10 mA 0.4 1.3 V Coupled Threshold Input Current (L → H) IFLH IO = 0 mA, VO > 5 V 2.0 5.0 mA Threshold Input Voltage (H → L) VFHL IO = 0 mA, VO < 5 V 0.8 V *1 Typical values at T A = 25°C. *2 Maximum pulse width = 50 μs, Maximum duty cycle = 0.5%. *3 Maximum pulse width = 10 μs, Maximum duty cycle = 0.2% *4 V OH is measured with the DC load current in this testing (Maximum pulse width = 2 ms, Maximum duty cycle = 20%).

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 6 of 19 Sep 07, 2011 SWITCHING CHARACTERISTICS (VEE = GND, unless otherwise specified and refer to RECOMMENDED OPERATING CONDITIONS) Parameter Symbol Conditions MIN. TYP. MAX. Unit Propagation Delay Time (L → H) tPLH Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, 0.07 0.25 μs Propagation Delay Time (H → L) tPHL Duty Cycle = 50% , IF = 10 mA 0.10 0.25 μs Pulse Width Distortion (PWD) |tPHL−tPLH| 0.03 0.1 μs Propagation Delay Time (Difference Between Any Two Products) tPHL−tPLH −0.1 0.1 μs Rise Time tr 50 ns Fall Time tf 50 ns UVLO (Turn On Delay) tUVLO ON VO > 5 V, IF = 10 mA 0.8 μs UVLO (Turn Off Delay) tUVLO OFF VO < 5 V, IF = 10 mA 0.6 μs Common Mode Transient Immunity at High Level Output |CMH| TA = 25°C, IF = 10 mA, VCC = 30 V, VO (MIN.) = 26 V, VCM = 1.5 kV 25 kV/μs Common Mode Transient Immunity at Low Level Output |CML| TA = 25°C, IF = 0 mA, VCC = 30 V, VO (MAX.) = 1 V, VCM = 1.5 kV 25 kV/μs *1 Typical values at T A = 25°C. *2 This load condition is equivalent to the IGBT load at 1 200 V/75 A. <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 7 of 19 Sep 07, 2011 TEST CIRCUIT Fig. 1 IOH Test Circuit Fig. 2 I OL Test Circuit Fig. 3 VOH Test Circuit Fig. 4 V OL Test Circuit Fig. 5 IFLH Test Circuit Fig. 6 UVLO Test Circuit VCC = 15 to 30 V 2.5 V 0.1 Fμ IOL IF VCC = 15 to 30 V 0.1 Fμ VO > 5 V IF = 10 mA VCC 0.1 Fμ VO > 5 V IF = 7 to 16 mA VCC = 15 to 30 V 0.1 Fμ VOH 100 mA VCC = 15 to 30 V 4 V 0.1 Fμ IF = 7 to 16 mA IOH VCC = 15 to 30 V 0.1 Fμ VOL 100 mA SHIELD SHIELD SHIELD SHIELD SHIELD SHIELD

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 8 of 19 Sep 07, 2011 VCC = 15 to 30 VIF = 10 mA 10 kHz 50% DUTY CYCLE 0.1 F μ VO 500 Ω 10 Ω 10 nF tPHLtPLH IF VOUT 90% 50% 10% tr tf VCC = 30 V VCM = 1.5 kV 0.1 Fμ A B 2 VO IF VOH 26 V 1 V VOL VCM 0 V VO (Switch A: IF = 10 mA) VO (Switch B: IF = 0 mA) Fig. 7 tPLH, tPHL, tr, tf Test Circuit and Wave Forms Fig. 8 CMR Test Circuit and Wave Forms Δ t =δ V δ t VCM Δ t SHIELD SHIELD <R> <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 9 of 19 Sep 07, 2011 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) Ambient Temperature TA (°C) Diode Power Dissipation PD (mW) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Detector Power Dissipation PC (mW) DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Threshold Input Current IFLH (mA) THRESHOLD INPUT CURRENT vs. AMBIENT TEMPERATURE 20 40 60 80 120 1000 20 40 60 80 120 1000 300 250 200 150 100 5.0 4.0 3.0 2.0 1.0 VCC = 30 V, VEE = GND, VO > 5 V VCC = 30 V, VEE = GND −40 −2 00 2 04 06 08 0 100 Forward Current IF (mA) Output Voltage VO (V) OUTPUT VOLTAGE vs. FORWARD CURRENT 102 4 35 Forward Voltage VF (V) Forward Current IF (mA) FORWARD CURRENT vs. FORWARD VOLTAGE 1.0 0.01 0.1 1.0 100 TA = +100°C +85°C +50°C +25°C 0°C −40°C High Level Output Voltage – Supply Voltage VOH – VCC (V) High Level Output Current IOH (A) HIGH LEVEL OUTPUT VOLTAGE – SUPPLY VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT VCC = 30 V, VEE = GND, IF = 10 mA−40°C +25°C TA = +110°C Remark The graphs indicate nominal characteristics.

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 10 of 19 Sep 07, 2011 Forward Current IF (mA) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. FORWARD CURRENT PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. SUPPLY VOLTAGESupply Voltage VCC (V) Low Level Output Current IOL (A) Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. LOW LEVEL OUTPUT CURRENT Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) 6 8 10 12 14 16 18 VCC = 30 V, VEE = GND, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 250 200 150 100 t PHL PWD tPLH 15 20 25 30 VEE = GND, IF = 10 mA, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 250 200 150 100 t PHL PWD tPLH PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD CAPACITANCE Load Capacitance Cg (nF) 10 20 30 40 50 VCC = 30 V, VEE = GND, IF = 10 mA, Rg = 10 Ω, f = 10 kHz, Duty cycle = 50% 250 200 150 100 t PHL tPLH PWD 0 0.5 1 1.5 2.5 2 VCC = 30 V, VEE = GND, IF = 0 mA −40°C +25°C TA = +110°C PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD RESISTANCE 0 1 02 03 04 05 0 VCC = 30 V, VEE = GND, IF = 10 mA, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 250 200 150 100 t PHL PWD tPLH Load Resistance Rg (Ω) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) 0−40 −20 20 40 60 80 VCC = 30 V, VEE = GND, IF = 10 mA, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 250 200 150 100 t PHL tPLH 100 PWD Remark The graphs indicate nominal characteristics.

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 11 of 19 Sep 07, 2011 Ambient Temperature TA (°C) SUPPLY CURRENT vs. AMBIENT TEMPERATURE High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) 20 0 20 40 80 60−40 2.0 1.5 1.0 0.5 100 VCC = 30 V, VEE = GND, VO = OPEN ICCH (IF = 10 mA) ICCL (IF = 0 mA) Ambient Temperature TA (°C) Supply Voltage VCC (V) SUPPLY CURRENT vs. SUPPLY VOLTAGE High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) 15 20 30 25 2.0 0.5 1.0 1.5 VEE = GND, VO = OPEN ICCH (IF = 10 mA) ICCL (IF = 0 mA) High Level Output Voltage – Supply Voltage V OH – VCC (V) HIGH LEVEL OUTPUT VOLTAGE – SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE −20 0 20 40 80 60−40 0.0 −3.0 −2.5 −2.0 −1.5 −1.0 −0.5 100 −20 0 20 40 80 60−40 100 VCC = 30 V, VEE = GND, IF = 10 mA, IO = –100 mA Ambient Temperature TA (°C) High Level Output Current IOH (A) HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE 0.30 0.00 0.05 0.10 0.15 0.20 0.25 V CC = 30 V, VEE = GND, IF = 10 mA, IO = 100 mA Ambient Temperature TA (°C) Low Level Output Current IOL (A) LOW LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE −20 0 20 40 80 60−40 100 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V CC = 30 V, VEE = GND, IF = 10 mA, VCC–VO = 4 V −20 0 20 40 80 60−40 100 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V CC = 30 V, VEE = GND, IF = 10 mA, VO = 2.5 V Remark The graphs indicate nominal characteristics.

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 12 of 19 Sep 07, 2011 OUTPUT VOLTAGE vs. SUPPLY VOLTAGE Supply Voltage VCC – VEE (V) Output Voltage VO (V) 0 5 10 15 20 UVLOHYS VUVLO+VUVLO− (12.3 V)(11.0 V) Remark The graph indicates nominal characteristics.

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 13 of 19 Sep 07, 2011 TAPING SPECIFICATIONS (UNIT: mm) PS9305L-E3 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 17.5±1.0 21.5±1.0 2.0±0.1 4.0±0.1 6.35±0.1 8.0±0.1 1.5 +0.1 1.75±0.1 4.5 MAX. 7.5±0.1 10.2±0.1 16.0±0.3 0.35 1.5 +0.1 4.05±0.1 Outline and Dimensions (Tape) Tape Direction Outline and Dimensions (Reel) Packing: 2 000 pcs/reel 15.9 to 19.4 Outer edge of flange

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 14 of 19 Sep 07, 2011 Tape Direction Outline and Dimensions (Tape) Outline and Dimensions (Reel) Packing: 2 000 pcs/reel 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 23.9 to 27.4 Outer edge of flange 25.5±1.0 29.5±1.0 2.0±0.1 4.0±0.1 6.35±0.1 8.0±0.1 2.0 +0.1 1.5 +0.1 +0.3 –0.1 4.05±0.1 1.75±0.1 24.0 4.5 MAX. 12.0±0.1 0.35 11.5±0.1 PS9305L2-E3 <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 15 of 19 Sep 07, 2011 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) Part Number PS9305L PS9305L2 Lead Bending A lead bending type (Gull-wing) for surface mount lead bending type (Gull-wing) for long clearance distance (surface mount) 9.2 B 1.27 C 0.8 D 2.2 10.2 1.27 0.8 2.2 D CB A <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 16 of 19 Sep 07, 2011 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering

• Peak reflow temperature 260 °C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120 ±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) 120±30 s (preheating) 220°C 180°C Package Surface Temperature T (°C) Time (s) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 260°C MAX. 120°C (2) Wave soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120 °C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350 °C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 17 of 19 Sep 07, 2011 (4) Cautions

• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. USAGE CAUTIONS 1. This product is weak for static electricity by designed wi th high-speed integrated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 0.1 μF is used between V CC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close to the input block pattern of the photocoupler. If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) Pin 4 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. *1 NC: Non-Connection (No Connection) 3. Make sure the rise/fall time of the forward current is 0.5 μs or less. 4. In order to avoid malfunctions, make sure th e rise/fall slope of the supply voltage is 3 V/μs or less. 5. Avoid storage at a high temperature and high humidity. <R>

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 18 of 19 Sep 07, 2011 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Spec. Unit Climatic test class (IEC 60068-1/DIN EN 60068-1) 40/110/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.5 × UIORM, Pd < 5 pC UIORM Upr 1 130 1 695 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM, Pd < 5 pC Upr 2 119 Vpeak Highest permissible overvoltage UTR 8 000 Vpeak Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2 Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175 Material group (DIN EN 60664-1 VDE0110 Part 1) III a Storage temperature range Tstg –55 to +125 °C Operating temperature range TA –40 to +110 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25°C VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. Ris MIN. Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current I F, Psi = 0) Power (output or total power dissipation) Isolation resistance V IO = 500 V dc at TA = Tsi Tsi Isi Psi Ris MIN. 175 400 700 mA mW Ω

PS9305L,PS9305L2 Chapter Title R08DS0013EJ0200 Rev.2.00 Page 19 of 19 Sep 07, 2011 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Rev. Date Page Summary

0.01 May 12, 2010 − First Edition issued

1.00 May 16, 2011 Throughout Prelimi nary Data Sheet -> Data Sheet

Throughout Safety standards approved p.3 Modification of MARKING EXAMPLE p.4 Addition of ORDERING INFORMATION p.4 Modification of ABSOLUTE MAXIMUM RATINGS p.5 Modification of ELECTRICAL CHARACTERISTICS ICCH, ICCL p.6 Modification of SWITCHING CHARACTERISTICS |tPHL−tPLH| pp.7, 8 Addition of TEST CIRCUIT pp.9 to 12 Addition of TYPICAL CHARACTERISTICS p.13 Addition of TAPING SPECIFICATIONS p.14 Addition of RECOMMENDED MOUNT PAD DIMENSIONS pp.15, 16 Addition of NOTES ON HANDLING p.17 Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT

2.00 Sep 07, 2011 Throughout Addition of PS9305L2

p.1 Addition of SEMKO approved p.3 Modification of MARKING EXAMPLE p.6 Modification of SWITCHING CHARACTERISTICS tPLH, tPHL, |tPHL−tPLH| p.8 Modification of Fig. 7 tPLH, tPHL, tr, tf Test Circuit and Wave Forms, and Fig. 8 CMR Test Circuit and Wave Forms p.17 Modification of USAGE CAUTIONS 2. (2)

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You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", an d "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment ; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or syst ems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct thr eat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compati bility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renes as Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this doc ument or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-o wned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Renesas Electronics Canada Limited

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Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea SALES OFFICES © 2011 Renesas Electronics Corporation. All rights reserved. Colophon 1.1