PS8101-V-F3-AX

PS8101_V01 RENESAS | Alldatasheet

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Technical content

R08DS0138EJ0200 Rev.2.00 Page 1 of 13 Feb. 17, 2026 Data Sheet PS8101

1 Mbps, HIGH CMTI ANALOG OUTPUT TYPE

5- PIN SOP (SO-5) PHOTOCOUPLER

DESCRIPTION

The PS8101 is an optically coupled isolator containing an AlGaAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip. This is a plastic SOP (Small Out-line Package) type for high density applications.

FEATURES

• High common mode transient immunity (|CMH|, |CML| = 15 kV/µs MIN.)
• Small package (SO-5)
• High supply voltage (VCC = 35 V)
• High isolation voltage (BV = 3 750 Vr.m.s.)
• High-speed response (tPHL = 0.8 µs MAX., tPLH = 1.2 µs MAX.)
• Embossed tape product：PS8101-F3: 2 500 pcs/reel
• Pb-free product
• Safety standards
• UL approved: UL 1577, Single protection
• CSA approved: CSA C22.2 No. 62368-1, Basic insulation
• VDE approved: DIN EN IEC 60747-5-5 (Option)

APPLICATIONS

• Computer and peripheral manufactures
• General purpose inverter
• Substitutions for relays and pulse transformers
• Power supply Start of mass production Jul.2007 R08DS0138EJ0200 Rev.2.00 Feb. 17, 2026 PIN CONNECTION (Top View) 1. Anode 2. Cathode 3. GND 4. V O 5. VCC 5 3 1 2

R08DS0138EJ0200 Rev.2.00 Page 2 of 13 Feb. 17, 2026 PACKAGE DIMENSIONS (UNIT: mm) Weight: 0.08 g (TYP.) PHOTOCOUPLER CONSTRUCTION Parameter MIN. Air Distance 4.2 mm Creepage Distance 4.2 mm Isolation Distance 0.2 mm 1.27 0.4+0.10 –0.05 0.25 M 0.1±0.1 2.6±0.2 (4.4)*1 7.0±0.3 0.5±0.3 0.15+0.10 –0.05 3.4 +0.3 –0.15 3 1 2 *1 ( ) indicates reference dimension.

R08DS0138EJ0200 Rev.2.00 Page 3 of 13 Feb. 17, 2026 MARKING EXAMPLE

ORDERING INFORMATION

Part Number Order Number *1 Solder Plating Specification Packing Style Safety Standard Approval Application Part Number *2 PS8101 PS8101-AX Pb-Free (Ni/Pd/Au) Embossed Tape 20 pcs Standard products (UL, CSA Approved) PS8101 PS8101-F3 PS8101-F3-AX Embossed Tape 2 500 pcs/reel PS8101-V PS8101-V-AX Embossed Tape 20 pcs UL, CSA, VDE Approved PS8101-V-F3 PS8101-V-F3-AX Embossed Tape 2 500 pcs/reel Notes: *1. When specifying CTR rank, please add “-CTR rank” after Order Number. ex. K rank : PS8101-AX-K Notes: *2. For the application of the safety standard, the following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current IF 25 mA Reverse Voltage VR 5.0 V Power Dissipation *1 PD 45 mW Detector Supply Voltage VCC 35 V Output Voltage VO 35 V Output Current IO 8.0 mA Power Dissipation *2 PC 100 mW Isolation Voltage *3 BV 3 750 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +125 °C Notes: *1. Reduced to 0.45 mA/°C at TA = 25 °C or more. *2. Reduced to 1.00 mW/°C at TA = 25 °C or more. *3. AC voltage for 1 minute at TA = 25 °C, RH = 60% between input and output. Pins 1-2 shorted together, 3-5 shorted together. No. 1 pin Mark Initial of Renesas (Engraved mark) Rank Code Year Assembled (Last 1 Digit) Week Assembled N 9 31 8101 N931 R *1 *1 Bar : Pb-Free Type Number Assembly Lot Ni/Pd/Au PLATING

R08DS0138EJ0200 Rev.2.00 Page 4 of 13 Feb. 17, 2026 ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage VF I F = 16 mA 1.7 2.2 V Reverse Current IR V R = 3 V 10 µA Forward Voltage Temperature Coefficient ∆VF/∆TA I F = 16 mA −2.1 mV/ °C Terminal Capacitance C t V = 0 V, f = 1 MHz 30 pF Detector High Level Output Current I OH (1) I F = 0 mA, VCC = VO = 5.5 V 3 500 nA High Level Output Current I OH (2) I F = 0 mA, VCC = VO = 30 V 100 µA Low Level Output Voltage V OL IF = 16 mA, VCC = 4.5 V, IO = 1.2 mA 0.1 0.4 V Low Level Supply Current I CCL IF = 16 mA, VO = open, VCC = 30 V 50 µA High Level Supply Current I CCH I F = 0 mA, VO = open, VCC = 30 V 0.01 2 Coupled Current Transfer Ratio *1 CTR I F = 16 mA, VCC = 4.5 V,VO = 0.4 V 15 20 35 % Isolation Resistance R I-O V I-O = 1 kVDC, RH = 40 to 60 % 1011 Ω Isolation Capacitance C I-O V = 0 V, f = 1 MHz 0.4 pF Propagation Delay Time (H → L) *2 tPHL IF = 16 mA, VCC = 5 V, RL = 2.2 kΩ, CL = 15 pF 0.5 0.8 µs Propagation Delay Time (L → H) *2 tPLH 0.6 1.2 Common Mode Transient Immunity at High Level Output |CMH| IF = 0 mA, VCC = 5 V, RL = 4.1 kΩ, VCM = 1.5 kV 15 kV/ µs Common Mode Transient Immunity at Low Level Output |CML| IF = 16 mA, VCC = 5 V, RL = 4.1 kΩ, VCM = 1.5 kV Notes: *1. CTR rank K : 20 to 35 (%) N : 15 to 35 (%)

R08DS0138EJ0200 Rev.2.00 Page 5 of 13 Feb. 17, 2026 *2. Test circuit for propagation delay time Remark C L includes probe and stray wiring capacitance. *3. Test circuit for common mode transient immunity Remark C L includes probe and stray wiring capacitance. USAGE CAUTIONS 1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. By-pass capacitor of more than 0.1 µF is used between V CC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. 3. Avoid storage at a high temperature and high humidity. 4. Do not use adhesives or coating materials including halogens to fix this device. 90 % 10 % 1.5 kV 0 V 5 V 2 V 0.8 V VOL VCM VO (IF = 0 mA) VO (IF = 16 mA) tr tf R L = 4.1 kΩ VCC = 5 V 0.1 μF IF A SW B VCM + - C L = 15 pF VO (Monitor) Pulse input 47 Ω (Pulse width = 100μs, Duty cycle = 1/10) R L = 2.2 kΩ VO (Monitor) VCC = 5 V Input (Monitor) 0.1 μF C L = 15 pF Input Output 50 % 1.5 V 5 V VOL tPHL tPLH

R08DS0138EJ0200 Rev.2.00 Page 6 of 13 Feb. 17, 2026 TYPICAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) Remark The graphs indicate nominal characteristics. 25 50 75 100 Ambient Temperature TA (°C) Diode Power Dissipation P D (mW) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 100 25 50 75 100 Ambient Temperature TA (°C) Detector Power Dissipation P C (mW) DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 0.01 0.1 Forward Voltage V F (V) Forward Current I F (mA) FORWARD CURRENT vs. FORWARD VOLTAGE TA = +100 °C +50 °C +25 °C 0 °C –25 °C 1 000 0.1 100 50 100–25 0 25 75 Ambient Temperature TA (°C) High Level Output Current I OH (nA) HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE VCC = VO = 30 V VCC = VO = 5.5 V IF = 0 mA 0.5 5 10 501 Forward Current I F (mA) CURRENT TRANSFER RATIO vs. FORWARD CURRENT Current Transfer Ratio CTR (%) VCC = 4.5 V, VO = 0.4 V 1.6 0.0 1.2 0.4 1.4 1.0 0.8 0.6 0.2 0 50 100–50 –25 25 75 Ambient Temperature TA (°C) Normalized Current Transfer Raio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Normalized to 1.0 at TA = 25 °C, IF = 16 mA, VCC = 4.5 V, VO = 0.4 V

R08DS0138EJ0200 Rev.2.00 Page 7 of 13 Feb. 17, 2026 Remark The graphs indicate nominal characteristics. 4 8 18 20162 6 10 12 14 Output Voltage VO (V) Output Current I O (mA) OUTPUT CURRENT vs. OUTPUT VOLTAGE 20 mA 15 mA 10 mA 5 mA IF = 25 mA 12 16 204 82 6 10 14 18 Forward Current I F (mA) Output Voltage V O (V) OUTPUT VOLTAGE vs. FORWARD CURRENT R L = 2.2 kΩ 5.6 kΩ 3.0 1.0 2.0 10 15 255 20 Forward Current I F (mA) PROPAGATION DELAY TIME vs. FORWARD CURRENT Propagation Delay Time tPHL, tPLH (μs) VCC = 5 V, R L = 2.2 kΩ tPHL tPLH 0.1 10 k 100 k1 k Load Resistance R L (Ω) PROPAGATION DELAY TIME vs. LOAD RESISTANCE Propagation Delay Time tPHL, tPLH (μs) VCC = 5 V, I F = 16 mA tPLH tPHL –50 0 50 100–25 7525 Ambient Temperature TA (°C) NORMALIZED PROPAGATION DELAY TIME vs. AMBIENT TEMPERATURE Normalized Propagation Delay Time tPHL, tPLH Normalized to 1.0 at TA = 25 °C, IF = 16 mA, VCC = 5 V, R L = 2.2 kΩ tPLH tPHL

R08DS0138EJ0200 Rev.2.00 Page 8 of 13 Feb. 17, 2026 TAPING SPECIFICATIONS (UNIT: mm) Direction of fe ed (Unit:mm) (Unit:mm) Tape Direction Outline and Dimensions (Tape) Outline and Dimensions (Reel) Packing: 2 500 pcs/reel 5pin SOP 2.0±0.05 4.0±0.1 1.75±0.1 3.9±0.1 7.4±0.1 0.3±0.058.0±0.1 5.5±0.1 12.0±0.2 3.0±0.1 ⌀1.5+0.1 ⌀1.55±0.1 17.4±1.0 13.4±1.0 2.0±0.5 ⌀330±2.0 ⌀100±1.0⌀21.0±0.8 ⌀13.0±0.2

R08DS0138EJ0200 Rev.2.00 Page 9 of 13 Feb. 17, 2026 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) Remark All dimensions in this figure must be evaluated before use. 1.45 1.27 2.54 6.25 0.8

R08DS0138EJ0200 Rev.2.00 Page 10 of 13 Feb. 17, 2026 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering

• Peak reflow temperature 260 °C or below (package surface temperature)
• Time of peak reflow temperature 10 s or less
• Time of temperature higher than 220 °C 60 s or less
• Time to preheat temperature from 120 to 180 °C 120 ± 30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (2) Wave soldering
• Temperature 2 60 °C or below (molten solder temperature)
• Time 10 s or less
• Preheating conditions 120 °C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron
• Peak temperature (lead part temperature) 350 °C or below
• Time (per one side) 3 s or less
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)
• Place 1.5 to 2.0 mm or more away from the root of the lead (4) Cautions
• Flux cleaning Avoid cleaning with Freon- or halogen-based (chlorinated etc.) solvents.
• Fixing/Coating Do not use fixing agents or coatings containing halogen- based substances. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between VCC-GND at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 120±30 s (preheating) 220°C 180°C Package Surface Temperature T (°C) Time (s) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 260°C MAX. 120°C

R08DS0138EJ0200 Rev.2.00 Page 11 of 13 Feb. 17, 2026 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Rating Unit Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Vm = 1.6 × VIORM., qpd < 5 pC VIORM Vm 707 1 132 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Vm = 1.875 × VIORM., qpd < 5 pC Vm 1 326 V peak Highest permissible overvoltage VIOTM 6 000 Vpeak Degree of pollution (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)) 2 Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303-11)) CTI 175 Material group (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)) III a Storage temperature range Tstg －55 to +125 °C Operating temperature range TA －55 to +100 °C Isolation resistance, minimum value VI-O = 500 V dc, TA = 25 °C VI-O = 500 V dc, TA = maximum temperature of rating, at least 100 °C RI-O MIN. RI-O MIN. 1012 1011 Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Maximum ambient temperature Maximum input current Maximum output power dissipation Isolation resistance, minimum value at VI-O = 500 V dc, TA = TS TS ISI PSO RI-O MIN. 150 200 300 109 mA mW Ω Dependence of maximum safety ratings on ambient temperature 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150 175 200 Ambient Temperature TA (°C) Output Power Dissipation PSO (mW) Input Current ISI (mA) PSO: Output Power Dissipation ISI: Input Current

R08DS0138EJ0200 Rev.2.00 Page 12 of 13 Feb. 17, 2026 Method a) Destructive Test, Type and Sample Test Method b) Non-destructive Test, 100% Production Test VIOTM = 6 000 V Vm = 1 132 V VIORM = 707 V t1 tini t2 t3 tm t4 V t t1, t2 = 1 to 10 sec t3, t4 = 1 sec tm = 10 sec tst = 12 sec tini = 60 sec tst Vm = 1 326 V VIORM = 707 V t3 t4 tst t tm V t3, t4 = 0.1 sec tm = 1.0 sec tst = 1.2 sec

All trademarks and registered trademarks are the property of their respective owners. R08DS0138EJ0200 Rev.2.00 Page 13 of 13 Feb. 17, 2026 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or i any way allow it to enter the mouth.

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