PS75N75

PS75N75 SIRECT | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

http:// www.sirectsemi.com N-Channel Enhancement Mode Field Effect Transistor - 75Amp 75Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications □ Feature -Small surface mounting type -High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current capability -Voltage controlled small signal switch □ Construction -N-Channel Enhancement □ Absolute Maximum Ratings PARAMETER SYMBOL PS75N75 UNIT Drain-Source Voltage V DS 75 V Gate-Source Voltage V GS ± 20 V ID 75 Drain Current-Continuos @ TA = 125ºC (Note 1) -Pulsed (Note 2) IDM 300 A Drain-Source Diode Forward Current I S 60 A Maximum Power Dissipation P D 220 W Operting Junction and Storage Temperature Range T J , TSTG -55 to +175 ºC Thermal Resistance, Junction-to-Ambient R θJA 50 ºC/W Note: 1.Surface Mounted on FR-4 Board, t≦2% June 2009 / Rev.6.4 2.Pulse Test : 380μs pulse width, 2% duty cycle Circuit G S D E L E C T R O N I C PS75N75

http:// www.sirectsemi.com □ Electrical Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0V, ID = -250μA 75 - - V Zero Gate Voltage Drain Current I DSS VDS = 20V, VGS = 0V - - 20 μA Gate-Body Leakage I GSS VGS = ±16V, VDS = 0V - - ± 100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250μA 2 - 4 V Ststic Drain-Source On-Resistance R DS(ON) VGS = 10V, ID = 48A - 9 11 mΩ Forward Transconductance g FS VDS = 25V, ID = 30A - 50 - S SWITCHING CHARACTERSTICS Total Gate Charge Q g - 90 140 Gate-Source Charge Q gs - 20 35 Gate-Drain Charge Q gd VDS = 60V, ID = 48A VGS = 10V, RGEN = 4.7Ω - 30 45 nC Turn-On Delay Time T D(on) - 12 - Rise Time t r VDD = 38V, ID = 48A VGEN = 10V, RL = 10Ω RGEN = 4.7Ω - 79 - nS Turn-Off Delay Times T D(off) - 80 - Fall Time t f VDD = 38V, ID = 48A VGEN = 10V, RL = 10Ω RGEN = 4.7Ω - 52 - nS DYNAMIC CHARACTERISTICS Input Capacitance C ISS - 3300 - Output Capacitance C OSS - 530 - Reverse Transfer Capacitance C RSS VDS = 25V, VGS = 0V f = 1.0MHz - 80 - pF DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage V SD VGS = 0V, IS = 60A - 1.5 - V PS75N75

http:// www.sirectsemi.com TO-220AB PACKAGE B D E F HH I C N J G A M L K O G D S DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .579 .606 14.70 15.40 B .392 .411 9.95 10.45 C .104 .116 2.65 2.95 D .248 .272 6.30 6.90 E .325 .350 8.25 8.90 F .126 .157 3.20 4.00 G .492 .551 12.50 14.00 H .096 .108 2.45 2.75 I .028 .039 0.70 1.00 J .010 .022 0.25 0.55 K .146 .157 3.70 4.00 L .167 .187 4.25 4.75 M .045 .057 1.15 1.45 N .089 .114 2.25 2.90 O .047 .055 1.20 1.40 PS75N75 Sirectifier Global Corp., Delaware, U.S.A. China: st@sirectsemi.com … Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com