PS7341L-1B

PS7341-1B NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1999 OCMOS FET TM PS7341-1B,PS7341L-1B HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET (1-ch OCMOS FET) Document No. P14229EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan

DESCRIPTION

The PS7341-1B and PS7341L-1B are solid state relays containing a GaAs LED on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the output side. They are suitable for analog signal control because of their low offset and high linearity. The PS7341L-1B has a surface mount type lead.

FEATURES

• High isolation voltage (BV = 3 750 Vr.m.s.)
• 1 channel type (1 b output)
• Low LED Operating Current (I F = 2 mA)
• Designed for AC/DC switching line changer
• Small package (6-pin DIP)
• Low offset voltage
• PS7341L-1B: Surface mount type
• UL approved: File No. E72422 (S)
• BSI approved: No. 8252/8253
• CSA approved: CA 101391

APPLICATIONS

• Exchange equipment
• Measurement equipment
• FA/OA equipment

Data Sheet P14229EJ1V0DS002 PS7341-1B,PS7341L-1B PACKAGE DIMENSIONS (in millimeters) 9.25±0.5 3.5±0.3 4.15±0.33.3±0.3 0.5±0.1 2.541.34±0.1 0.25 M 0 to 15˚ 7.62 6.5±0.5 9.25±0.5 6.5±0.5 0.10+0.10–0.05 0.9±0.25 9.60±0.4 3.5±0.3 1.34±0.1 0.25 M 2.54 PS7341-1B PS7341L-1B 1. LED Anode 2. LED Cathode 3. NC 4. MOS FET Drain 5. MOS FET Source 6. MOS FET Drain 123 654 TOP VIEW 1. LED Anode 2. LED Cathode 3. NC 4. MOS FET Drain 5. MOS FET Source 6. MOS FET Drain 123 654 TOP VIEW

Data Sheet P14229EJ1V0DS00 3 PS7341-1B,PS7341L-1B

ORDERING INFORMATION

Part Number Package Packing Style Application Part Number PS7341-1B 8-pin DIP Magazine case 50 pcs PS7341-1B PS7341L-1B PS7341L-1B PS7341L-1B-E3 Embossed Tape 1 000 pcs/reel PS7341L-1B-E4 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (T A = 25 °°°°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current (DC) I F 50 mA Reverse Voltage V R 5.0 V Power Dissipation P D 50 mW Peak Forward Current IFP 1A MOS FET Break Down Voltage V L 400 V Continuous Connection A I L 150 mA Load Current Connection B 200 Connection C 300 Pulse Load Current (AC/DC Connection) ILP 300 mA Power Dissipation P D 560 mW Isolation Voltage BV 3 750 Vr.m.s. Total Power Dissipation P T 610 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −40 to +125 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 Conditions: IF ≥ 2 mA. The following types of load connections are available. AV L (AC/DC) 1 6 43 IL L B C 1 6 2 5 IL L VL (DC)+ 1 6 2 5 IL IL L VL (DC)+ 1 6 2 5

43 IL L VL (DC)+

*3 PW = 100 ms, 1shot *4 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

Data Sheet P14229EJ1V0DS004 PS7341-1B,PS7341L-1B RECOMMENDED OPERATING CONDITIONS (T A = 25 °°°°C) Parameter Symbol MIN. TYP. MAX. Unit LED Operating Current I F 21 0 2 0 m A LED Off Voltage V F 00 . 5 V ELECTRICAL CHARACTERISTICS (T A = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage V F IF = 10 mA 1.2 1.4 V Reverse Current I R VR = 5 V 5.0 µA MOS FET Off-state Leakage Current ILoff IF = 10 mA, VD = 400 V 0.5 10 µA Output Capacitance C out IF = 10 mA, VD = 0 V, f = 1 MHz 185 pF Coupled LED Off-state Current I Foff IL = 150 mA 2.0 mA On-state Resistance R on1 IF = 0 mA, IL = 10 mA 20 30 R on2 IF = 0 mA, IL = 150 mA 16 25 Ω Turn-on Time ton IF = 10 mA, VO = 5 V, PW ≥ 10 ms 0.03 0.2 ms Turn-off Time toff 0.6 1.5 Isolation Resistance R I-O VI-O = 1.0 kVDC 10 Ω Isolation Capacitance C I-O V = 0 V, f = 1 MHz 1.1 pF *1 Test Circuit for Switching Time VL R L IF R in Pulse Input Input monitor monitor VO Input Output toff ton 10 % VO = 5 V 90 % 50 %

Data Sheet P14229EJ1V0DS00 5 PS7341-1B,PS7341L-1B TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise specified) f = 1 MHz IF = 0 mA 20 40 60 80 100 120 200 150 100 OUTPUT CAPACITANCE vs. Output Capacitance Cout (pF) Applied Voltage VD (V) LOAD CURRENT vs. LOAD VOLTAGE Load Current IL (mA) Load Voltage VL (V) –4.0 –2.0 0 4.02.0 –100 –200 100 200 5001000 200 300 400 10–6 10–5 10–4 10–7 10–8 TA = 80 ˚C Off-state Leakage Current ILoff (A) Applied Voltage VD (V) OFF-STATE LEAKAGE CURRENT vs. APPLIED VOLTAGE APPLIED VOLTAGE IF = 50 mA 30 mA 20 mA 10 mA 5 mA 1 mA 1000–25 25 50 75 1.0 1.4 1.6 1.8 1.2 0.8 Forward Voltage VF (V) Ambient Temperature TA (˚C) AMBIENT TEMPERATURE FORWARD VOLTAGE vs. 100857550250–25 100 Maximum Forward Current IF (mA) Ambient Temperature TA (˚C) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE 10085750–25 50 25 200 300 100 Maximum Load Current IL (mA) Ambient Temperature TA (˚C) MAXIMUM LOAD CURRENT vs. AMBIENT TEMPERATURE 25 ˚C

Data Sheet P14229EJ1V0DS006 PS7341-1B,PS7341L-1B Normalized to 1.0 at TA = 25 ˚C, IF = 0 mA, IL = 10 mA 0.5 1.5 2.0 3.0 1.0 2.5 0.0 100755025–25 0 NORMALIZED ON-STATE RESISTANCE vs.Normalized On-state Resistance Ron Ambient Temperature TA (˚C) n = 50 pcs, IF = 0 mA, IL = 10 mA 20 210 ON-STATE RESISTANCE DISTRIBUTION Number (pcs) On-state Resistance Ron (Ω ) 0.03 0.05 Number (pcs) Turn-on Time ton (ms) TURN-ON TIME DISTRIBUTION n = 50 pcs, IF = 10 mA, VO = 5 V n = 50 pcs, I F = 10 mA, VO = 5 V 0.5 0.70 Number (pcs) Turn-off Time toff (ms) TURN-OFF TIME DISTRIBUTION AMBIENT TEMPERATURE VO = 5 V 30252015105 0.05 0.15 0.20 0.30 0.10 0.25 Turn-on Time ton (ms) Forward Current IF (mA) TURN-ON TIME vs. FORWARD CURRENT 30252015105 VO = 5 V Turn-off Time toff (ms) Forward Current IF (mA) TURN-OFF TIME vs. FORWARD CURRENT

Data Sheet P14229EJ1V0DS00 7 PS7341-1B,PS7341L-1B Normalized to 1.0 at TA = 25 ˚C, IF = 10 mA, VO = 5 V 1000–25 25 50 75 2.5 3.0 0.0 2.0 1.5 1.0 0.5 Normalized Turn-on Time ton Ambient Temperature TA (˚C) NORMALIZED TURN-ON TIME vs. AMBIENT TEMPERATURE Normalized to 1.0 at TA = 25 ˚C, IF = 10 mA, VO = 5 V 1000–25 25 50 75 2.5 3.0 0.0 2.0 1.5 1.0 0.5 Normalized Turn-off Time toff Ambient Temperature TA (˚C) NORMALIZED TURN-OFF TIME vs. AMBIENT TEMPERATURE Remark The graphs indicate nominal characteristics.

Data Sheet P14229EJ1V0DS008 PS7341-1B,PS7341L-1B TAPING SPECIFICATIONS (in millimeters) Outline and Dimensions (Tape) 1.55±0.1 2.0±0.1 4.0±0.1 1.55±0.1 1.75±0.1 4.3±0.2 10.3±0.1 0.3 7.5±0.1 16.0±0.3 10.4±0.1 12.0±0.1 Outline and Dimensions (Reel) Packing: 1 000 pcs/reel 16.4+2.0–0.0 80.0±5.0φ 330φ 2.0±0.5 R 1.0 13.0±0.5φ 21.0±0.8φ Tape Direction PS7341L-1B-E3 PS7341L-1B-E4 1.5

Data Sheet P14229EJ1V0DS00 9 PS7341-1B,PS7341L-1B RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering

• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 60 to 90 s (preheating) 210 ˚C 120 to 160 ˚C Package Surface Temperature T (˚C) Time (s) (heating) to 10 s to 30 s 235 ˚C (peak temperature) Recommended Temperature Profile of Infrared Reflow (2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions
• F l u x e s Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
• Products in dry pack After opening the dry pack, solder the products within the valid storage period specified on the label on the dry pack.

Data Sheet P14229EJ1V0DS0010 PS7341-1B,PS7341L-1B [MEMO]

Data Sheet P14229EJ1V0DS00 11 PS7341-1B,PS7341L-1B [MEMO]

PS7341-1B,PS7341L-1B CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. OCMOS FET is a trademark of NEC Corporation.

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