PS7341A-1B NEC | Alldatasheet

Document overview

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Technical content

6-PIN DIP, 20ΩΩΩΩΩ LOW ON-STATE RESISTANCE 100 pF LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOS FET PS7341A-1B PS7341AL-1B

FEATURES

  • HIGH ISOLATION VOLTAGE BV = 3,750 Vr.m.s.
  • 1 CHANNEL TYPE

1 B output

  • DESIGNED FOR AC/DC SWITCHING LINE CHANGER
  • SMALL PACKAGE 6 pin DIP
  • LOW OUTPUT CAPACITANCE C out = 100 pF TYP
  • LOW ON-STATE RESISTANCE R on2 = 20 Ω TYP
  • LOW LED OPERATING CURRENT IF = 2 mA
  • LOW OFFSET VOLTAGE
  • SURFACE MOUNT TYPE LEAD AVAILABLE PS7341AL-1B

DESCRIPTION

The PS7341A-1B and PS7341AL-1B are solid state relays containing a GaAs LEDs on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the output side. They are suitable for analog signal control because of their low offset and high linearity.

APPLICATIONS

  • EXCHANGE EQUIPMENT
  • MEASUREMENT EQUIPMENT
  • FA/OA EQUIPMENT Input 90% 10% Output tONtOFF Vo = 5 V 50% PS7341A-1B, PS7341AL-1B PRELIMINARY DATA SHEET ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PS7341A-1B, PS7341AL-1B SYMBOLS PARAMETERS UNITS MIN TYP MAX VF Forward Voltage, IF = 10 mA V 1.2 1.4 IR Reverse Current, VR = 5 V µA 5.0 ILOFF Off-State Leakage Current, IF = 10 mA, VD = 400 V µA 1 0 C OUT Output Capacitance, IF = 10 mA, VD = 0 V, f = 1 MHz pF 100 R ON1 On-State Resistance, IF = 0 mA, IL = 10 mA Ω 26 35 R ON2 On-State Resistance, IF = 0 mA, IL = 120 mA, t ≤ 10 ms Ω 20 30 tON Turn-On Time1 ms 0.2 tOFF Turn-Off Time1 ms 1.5 R l-O Isolation Resistance, VI-O = 1.0 kVDC Ω 109 C l-O Isolation Capacitance, V = 0 V, f = 1 MHz pF 1.1 MOSFET Diode IF = 10 mA, VO = 5 V, PW ≥ 10 ms Notes: 1. Test Circuit for switching Time Coupled Pulse Input Input monitor IF VL Vo monitor R LR in California Eastern Laboratories

PS7341A-1B, PS7341AL-1B SYMBOLS PARAMETERS UNITS RATINGS PS7341A-1B PS7341AL-1B Diode VR Reverse Voltage V 5.0 IF Forward Current (DC) mA 50 PD Power Dissipation mW 50 IFP Peak Forward Current2 A1 MOSFET VL Break Down Voltage V 400 IL Continuous Load Current3 mA Connection A 120 Connection B 160 Connection C 240 ILP Pulse Load Current4 mA 240 PD Power Dissipation mW 560 Coupled BV Isolation Voltage 5 Vr.m.s. 3,750 PT Total Power Dissipation mW 610 TA Operating Ambient Temp. °C -40 to +85 TSTG Storage Temperature °C -40 to +125 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. PW = 100 µs, Duty Cycle = 1% 3. Conditions: IF ≥ 2 mA. The following types of loaad connections are available. 4. PW = 100 ms, 1 shot 5. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output. SYMBOL PARAMETER UNITS MIN TYP MAX IF LED Operating Current mA 2 10 20 VF LED Off Voltage V 0 0.5 RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) (Top View) 4. MOSFET Drain 5. MOSFET Source 6. MOSFET Drain OUTLINE DIMENSIONS (Units in mm) PS7341A-1B 1. LED Anode 2. LED Cathode 3. NC 9.25±0.5 0.25 M 1.34 ± 0.1 2.542.54 MAX 7.62 0 to 15 ˚ 64 5 3.5±0.3 3.3±0.3 4.15±0.3 6.5±0.5 0.5±0.1 PS7341AL-1B 1. LED Anode 2. LED Cathode 3. NC 4. MOSFET Drain 5. MOSFET Source 6. MOSFET Drain (Top View) Connection B Connection C Connection A L L IL L L IL + IL IL IL IL IL VL (AC/DC) VL (DC) VL (DC) VL (DC) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/27/2001DATA SU BJECT TO CHANGE WITHOUT NOTICE 9.25±0.5 MAX. 0.25 M 1.34 ± 0.1 2.54 6 45 3.5±0.3 6.5±0.5 0.10 0.9±0.25 9.60±0.4 +0.10 -0.05