PS3001 NEC | Alldatasheet
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Technical content
N.E € ELECTRONICS INC 30E D mm 427525 00297b8 7? MM T-4/-99 Cc PHOTO SCR COUPLERS PHOTO SCR COUPLER a
DESCRIPTION
‘The PS3001 and PS3002 are optically coupled isolators containing GaAs infrared emitting diode and a PNPN silicon photo SCR. PACKAGE DIMENSIONS FEATURES in millimeters (inches) © High Voltage Isolation 2.800 Voc MIN. © Low Turn on Current 12 mA MAX. 928:05 © Plastic dual-in-line pack: 10.364) Package res 4: © High Speed Switching ; = © Economical, Compact. oi | #16 15 160 APPLICATIONS - i ¥¥ (0.299) _ © Interface circuit for various instrumentations, control equipments Pears 6.820.510.2568) @ Replaceable from a reed relay 32,3, HE ¥g|° st \\) Vd ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Cc al ten Oe 33 {| Reverse Voltage VR 6V. 98 12 i Forward Current (DC) Ip 80 mA S (0.0871 (0.1) Peak Forward Current lep 3A 6 5 4 1. Anode Power Dissipation Pp 100 mw cl <4 2. Cathode scr Loss 3, NC Peak Off and Reverse Voltage VoRM, VRAM PS3001 200 V 4. Cathode PS3002 400 V YY 5. Anode Direct On-State Current It 300 mA 6. Gate Peak pulse current °1 It 3A (Top View) Peak surge on Current ITSM 3A Power Dissipation Pscr 360 mW : : Isolation Voltage *2 av 2600 Vac Storage Temperature Tstg 65 to +125 °C Operation Temperature Topt 85 to +100 °C Lead Soldering Time (at 260 °C) 105. \\ :
NE C ELECTRONICS INC BOE D m@ 6427525 0029769 9 ee . |, ELECTRICAL CHARACTERISTICS (Ta=25 °C) st CHARACTERISTIC SYMBOL TYP. |MAX, | UNIT TEST CONDITIONS Forward Voltage VE WW 1.4 Vv Ip=20 mA 3 | reverse current IR 10 | pA | Vasev Junction Capacitance Ce 50 pF V=0, f=1.0MH2 © Peak Off-State Current lor 10 | yA | VorM=Rated ° fone ee eee eet ORM . a | AOY agge27 ka | Reverse Current IRRM 10 | wA | ta-t00°C & | On State Voltage VIM 13] Vv 17=300 mA @ bo LT a a Fy Holding Current IH 0.2 1 mA RGK=27 kQ, Vo=24 V Rate of rise of forward blocking |_| vo | lun. | WoRMRated Voltage dviat 10 Vis | RG K=27 kM, Ta=100°C Turn on Current 3 let [5 | 12 | mA | Vo=6V, RGK=27 k2 Isolation breakdown Voltage [viz [2600] | DC/I minute : Bhat [2 | = | lsolati Resi: 2 Vi t= 1.0 k . 8 | isolation Capacitance |_| Vs0, f=1.0 MHz vaaentims tg IpT=60 mA, Vp“eV | Turn on Time 4 ton 10 os | Aae27 ks, heet00 2 *4 Turn on Time Test Circuit . coal “1 pulse width = 100 us Repetitive Frequency = 100 Hz " ce Vo= *2 Measuring Condition puree input oe vorey DC voltage for 1 minute at Ta = 25°C; RH = 60% (ater ica) — Between input {pin No. 1, 2 and No. 3 Common} (uty cycle = 10%) ]'F x= ) and output (pin No, 4, 5 and No, 6 Common) one f=. song 27kt Vout "3 ley rank AL +1008 KX :to12mA LX :t07mA — —
NE C ELECTRONICS INC 30E D M@@ 6427525 0029770 S mm PS3001(1), PS3002(1) T-41-87 ° . TYPICAL CHARACTERISTICS (Ta=25 °C) FORWARD CURRENT vs. DIRECT ON-STATE CURRENT vs, _ AMBIENT TEMPERATURE AMBIENT TEMPERATURE 120) 300; 7 -NEL | TT 100) € : 4 Z 80 i 200) 3 $ 38 2 3 Q 3 40) —— i] 100} pL IN + 2 $< 9 ee oO 25 50 75 100° «125150 ° 25 50 Ey 1000«125——(«150 . Ta — Ambient Temperature —°C Ta — Ambient Temperature —°C. PEAK OFF-STATE CURRENT vs. TURN ON CURRENT vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE 100m i "Tp =0 50) < i | Rox =27ka i ioe si : 1 104 : Vorm = Rated 3 Po oy Z| < 3 = of & 100) a Fe zg a : 3 3 (OSS, : 10 se = 2" : | ~~ r-) ce : | ~~ C) 20 40 60 80 100 a ee ——— = TURN ON CURRENT vs. SS] GATE-GATHODE RESISTANCE a | SSS = Nomsv a CPT) 0} = Ta=25'c Ta = Amewnt Temosrature = *C « aS 5 4 —— t 3 == Shape eeetn wnested ee tl = SSNS or T 10 100 iG00 RAGK - Gam-Camade Resistance = «0