PS2021 NEC | Alldatasheet

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Technical content

(High Isolation Voltage) Single Transistor —NEPOC SERIES—

DESCRIPTION

The PS2021 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor.

FEATURES

PACKAGE DIMENSIONS © Small package 7.2.x 6.5 x 3.5 mm in millimeters (inches) © High isolation voltage 4.000 Vac Rating 7.2405 © High transfer ratio 50 % MIN. oD © High speed switching testy = 3 us TYP, TAA A © Economical, compact, Dual In-Line Plastic Package

160 APPLICATIONS

Cd (0.299) @ Interface circuit for various instrumentations, control equipments. 33 ¥ sazas © Chopper circuits. #2 Bs ; © Computer and peripheral manufactures. bd _. © Pulse transformer, . “3 © Data communication euqipment. 53 0-5(0.02) ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) ae ; sg 1.2 2.54 Diode S (0.687) (0.1) ! Reverse Voltage Vr 5.0 v 6s 4 {Top view) Forward Current (DC) le 80 mA

2 Cathode Power Dissipation Pp 150 mW

rb Peak Forward Current IF (peak) 3 A 5. Collector (300 us, 2 % duty cycle) 6. Base ; T Transistor Collector to Emitter Voltage VcEo 40 v Collector to Base Voltage Veso 70 v * Unde licatic ul sR Emitter to Collector Voltage Veco 7 v Collector Current Io 100 mA Power Dissipation Po 150 mw Isolation Voltage * 1 BV 4000 Vac Storage Temperature Tstg -55to +150 °C Operating Temperature Topt —S5to+100 °C Lead Temperature (Soldening 10 s) 260 °c Total Power Dissipation Py 250 mW . ee Nippon Electric Co.Ltd,

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symeou | min. | TyP.| MAX.| UNIT ‘TEST CONDITIONS Forward Voto a [ Reverse Current ft 0 Ta Junction Capacitance je S| Sd 80 | | sop| V=0,f=1.0MHe Collector to Emitter Dark Current 'ceo [| [6 | oA | Vce=t0V,1r=0 B[DecurentGsin fare | ro | le=2mA, Vee =6.0V F [Collector to Base BreakdownVoltege | BVcso__| 70 | 120[ | V_ |ic=100uA,le=0 Emitter to Collector Breakdown Voltage | BVeco | 7 | 9 | | V_|le=100nA,1p=0 Current Transter Ratio *2 crriicie)| 60 | | | | tk=10mA, Vce=5.0V Collector Saturation Voltage [Veet | | | 08 [ V_ [lr=10mA ic=20mA 2 [rotation Resnanes [Rie | 10%) |_| @ | Vinour= 1OKV * 1 Measuring Condition * 3 Test Circuit for Switching Time DC or AC voltage for 1 minute at Ta = 25°C, RH = 60% Between input (pin No, 1, 2 and No. 3 Common) PULSE INPUT Vees10 Vv and output (pin No. 4, 5 and No, 6 Common) PW=100 ys tenes * 2 CTR rank (2 cycle ) a = K: 150 %~300 % = 110 L: 90 %~180 % soos | te ho M: 50 %~110 %

6 Jr-=1009

TYPICAL CHARACTERISTICS (Ta = 25 °C) DIODE POWER DISSIPATION vs. TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE 150 150 J} iN § \\ § soo} N a IN q 100 { & 100) 3 i a ’ 6 5 i Pett Ne Ty GETTER ! 50 3 50) ] 6 Hy Q 28 50 78 100125150 o 25 50 75 100125180 Ta-Ambient Temperature—"C Ta~ Ambient Temperature—"C

Sad oes oes me es 0s ef com y Td an e717 oo > LLEVA i Lf : ob AALA tT 2d Vee—Collector to Emitter Voltage~V COLLECTOR TO EMITTER DARK CURRENT va. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO ve. 100 100 FORWARD CURRENT. we EE LZ ea e/a SSeS Ce aoe i, a 2 A a WZ as 50 —25 0 25 50 75 100 0 05 1 Ey 10 50° 100 Ta—Ambient Temperature—"C Ip—Forward Current—mA 106 ———— “T_T TO eo 5 3 AZT 3 ee ae Poa iT eazy 8 Aero TTT TT 3 ‘Frrrt po TTT TT 40 at Ta=25 °C & Ra Ty fT TEE rE poe A TT in | ~se al ° 2 30 8 too Rp-Base Resistance—2 Ta~Amovent Temperature—"C . %

COLLECTOR CURRENT vs. SWITCHING TIME vs, COLLECTOR SATURATION VOLTAGE LOAD RESISTANCE ee 10 7 ee AF i 0 | a 0 mA a | ei A § BSS poe S| Wwe 2 eS ee & 24

3 Zane 22 ihe 1 | eat _|

é YT e6 A ee » eT i, pS 3 LA |_| s. Hees cot = > ora lw —— s© Cit Trin | cc Sa = Ae Ten —— ss FR er 4 02 04 06 OB 10 os a Voce: sat .—Collector Saturation Voltage—V Hi ssTunameyenqace™ pu in rT 5 i Cie 98 Yume RU—Load Resistance-2 & oa at 10 mA. 5 VI 3 7 100) T ELT > TUM er ; Uae Fag it a A ———— é aes 7 ie 8 00 & 6 mi , SH TATE ai FREQUENCY RESPONSE 2 “rl nT 109) — 3 SSS si Ht HA a RLS Ss em i, UE & LT PTT CT

3 Pe ital

a WL fT thi PT ik Sk Wk SOK 100 & 500 k —Frequency—He Nippon Electric Co.Ltd. apr.st-oiM NEC Building, 33-1, Shiba-Gochome, Minato-ku, ‘Tokyo 108, Japan Printed in Japan ‘Tel: Tokyo 454~1111 Telex Address: NECTOK J22686 . Cable Address: MICROPHONE TOKYO 4