PS2007B NEC | Alldatasheet
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Technical content
NE © ELECTRONICS INC 30E D MM b427525 OO29b40 3 mm T-4/- 97 HIGH SPEED PHOTO COUPLER eee
DESCRIPTION
The PS20078 is a high speed photo coupler containing a GaAsP light emitting diode and an integrated detector consisting of a photodiode and a high gain linear amplifier that drives a schottky clamped open collector output transistor in a plastic DIP (Dual In-Line Package). FEATURE: PACKAGE DIMENSIONS RES © Ultra high speed 50 ns TYP, in millimeters (inches) © High isolation voltage 3.000 Voc MIN. ozseos © Low input current req. 5 mA Fier I © Economical, compact, plastic dual in-line package pes © TTL compatible 5 V Supply et © Equivalent to HP's 5082-4360, 6N137 of 05%
260 APPLICATIONS
2 * a5208 © Line receiver 33 0.256), . 8 2379, : © Floating power supply ear © Computer and peripheral memory : FF HS | os © Replaceable from mechanical relays and reed relays agt— * 3 0.021, © Replaceable from pulse transformer Fi 1F0Ga 254 wo} ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Diode PIN CONNECTION Reverse Voltage VR 5 v [PIN | Function | Forward Current ip 10 mA Output Detector 1g Vo Ceoe Ceol Supply Voltage Ve 7 Ov a Output Voltage Vo 7 v () Output se Output Current lo 50 mA | Vo e I ad rive nable Voltage Ve 55 v Ww i ty) ty 8iVeo Power Dissipation Pe . 85 mw tnput Isolation Voltage pv! 3000 Voc Storage Temperature Tstg 85 to +125 °C Operating Temperature Topt 0 to +70 °c
NE C ELECTRONICS INC 306 D MM 6427525 0025641 5 me PS2007B tg - ELECTRICAL CHARACTERISTICS (Ta = 0 to 70 °C) . ™~ CHARACTERISTIC symeou [ MIN. | TYP. | MAX. | UNIT TEST CONDITIONS ~ | Farward Voltage 7 Oy 2 oe ete i sow Level Enable Current | tex | | 12 | -20 | mA ! vec-58V, VeL-05V i j .Vec=Vor5.5 V, 1p=250 uAl * High Level Output Current | ton | 20 | 200 | WA iveaoye H ! Vee=6.6 V, Ve=2.0 V i | Low Level Output Voltage j| VoL | j 04 0.6 Vf tg=5 mA, 1o=13 mA ° F j T Vce=5.6 V, Ve=2 V 8 | Low Levet Supply Current; Icct j 10 | 18 ™A jipstoma : Veo=5.5 V, Ve=0.5 V | High Level Supply Current! Icon | ! 7 7 18 mA | igsoma © ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symaot | MIN. [ TYP. | MAX. | UNIT | TEST CONDITIONS [Current Transfer Ratio | cTR_—| | 600 (|| Sid mANcc“S VAL=100 Ol . Isolation Capacitance ce | for fF veo, tet ne solation Capacitance Propagation Delay Time . 3 } to Low Output Level tPHL ‘2 50 76 ns | 1F57.5 mA, Vec=5 V $i - RL=350 2, CL=15 pF ~ 8 | Propagation Delay Time "2 [} 60 78 nsf to High Output Level [Pu fi i - pho Mish Output bevel pt : ; Propagation Delay Time of H Ip=7.5 mA, Veo=5 V : Enable to Low Output Level. EHL 18 S| RL=380 2, Vey=3 V ee to how Dutput bevel Propagation Delay Time of ; j 1 CL=15 pF Enable to High Output Level! ‘ELH! {30 si “1 Measuring Condition OC voltage for 1 minute at Ta = 25 °C, RH= 60 % Between input (ain No. 1, 2, 3, 4 Common) and Output (Pin No. 5, 6, 7, 8 Common) *2. Measuring Circurt : Pulse Input oO————. VecsS V omy ‘cons 777 e875 mad (fur as a) (3) ° (0008 peewee Xie SMV uty cyele= 1/10) | IF i 'e=3,75 mA) =o 1] Ry =360 2. o t 1 ' H [A | H H Ip Monitor o- [ eT =v Monwor gy i : , G Oum | \\" ty arn ' : Gy fs} i \\ i tot eiseieieeiieet aay ended 1SVv i — Vou, ‘ IPH ae . 'BLH “CL 1s approximately 15 oF. which inctudes orobe and stray witing capacitance, . .
NE C ELECTRONICS INC 30E D MM 6427525 0029643 9 07B rez 00 TB gt _ PROPAGATION DELAY TIME vs. FORWARD CURRENT PROPAGATION DELAY TIME vs, AMBIENT TEMPERATURE i ae a a 2 100 Vaav Pees. | i HACE A ; HEE PLE ter SS —= Fs ee z» Pj Ip = Forward Current = mA Ta ~ Ambient Temperature — °C