PS1192HA ETC | Alldatasheet
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Technical content
■ PHOTO TRANSISTOR ■ Absolute Maximum Rating Part No. Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Operating Temperature Storage Temperature Pc V CEO VECO Ic Topr Tstg Units mW V V mA °C °C Units nm mA mA V mW/cm 2 µsV m A Ωµ AV .oNtraP MAX ICEO Dark Current tr/tf Response Time IC Photo Current λ p Peak Wavelength VCEOR LICVCETYPEeVCETYPMINTYP ■ Electro-Optical Characteristics Ta = 25°C Ta = 25°C PS1192HA 900 0.4 2.0 5 5 8 / 9 10 2 100 0.1 10 PS1192HA 75 30 5 20 -30~+85 -30~+90 Y%JSFDUJPO Y ■ Package Dimensions ■ Spatial Distribution Collector Emitter Polarity Mark Emitter Mark ʶ ʶ ʶ ʶ ʶ ʶʶ Detector Chip ʴʵ ʶ ʢʣ ʶ ʢʣ ʶ ʶ ʢʣ ʢПʣ $FOUFS)PMF $FOUFS)PMF П ʶ ʢʣ ʴ ɹ ʶ ■ Taping Specification Unit : mm * Quantity 4,000 pcs/Reel Unit : mm Recommended Soldering pad PWB Camber direction Ta = 25°C
■ INFRARED LED ■ Radiant Illumination vs. Relative Photo Current ■ Collector Emitter Voltage vs. Photo Current ■ Ambient Temperature vs. Relative Photo Current ■ Ambient Temperature vs. Dark Current ■ Spectral Sensitivity Characteristics ■ Response Time Radiant Illumination Ee (mW/cm 2) Relative Photo Current Ic 0.1 1 10 10-2 100 10-1
101 Ta =25ˆ
Collector Emitter Voltage Vce (V) Photo Current Ic (mA) 05 1 0 100 101 10-1 Ta =25ˆ PC MAX. Ee=10mW/ cm 2 Ee=1mW/ cm 2 Ee=3mW/ cm 2 Ee=5mW/ cm 2 Ambient Temperature Ta (˚C) Relative Photo Current -25 0 25 50 75 100 0.1 Vce=5V Ambient Temperature Ta (˚C) Dark Current ID (A) 10-10 10-8 10-6 -25 0 25 50 75 100 10-4 Vceo=10V Wave Length λ (nm) Relative Sensitivity (%) 600 800 10004000 100 Ta =25ˆ Load Resistance RL (Ω ) Response Time (µs) 101 102 103 104 100 102 101 Ta =25ˆ Ic=2mAVce=10V tf tr ■ Ambient Temperature vs. Collector Dissipantion Ambient Temperature Ta (˚C) Collector Dissipation Pc (mW) 02 0-20 40 60 80 1000 100 ■ Response Time Measuring Circuit R R L Vcc Input Output tr tf 90% 10%