BCR10FM-12LC RENESAS | Alldatasheet
Document overview
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Technical content
Features
- IT (RMS) : 10 A
- VDRM : 600 V
- Tj: 150°C
- IFGTI, IRGTI, IRGT III: 50 mA
- Insulated Type
- Planar Passivation Type
- Viso: 2000 V Outline Application Low inrush current AC load. Maximum Ratings Parameter Symbol Voltage class Unit Repetitive peak off-state voltageNote1 VDRM 600 V Non-repetitive peak off-state voltageNote1 VDSM 700 V Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 10 A Commercial frequency, sine full wave 360conduction, Tc = 82C Surge on-state current ITSM 60 A 60 Hz sinewave 1 full cycle, peak value, non-repetitive I2t for fusion I2t 15 A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Peak gate power dissipation PGM 5 W Average gate power dissipation PG (AV) 0.5 W Peak gate voltage VGM 10 V Peak gate current IGM 2 A Junction Temperature Tj –40 to +150 C Storage temperature Tstg –40 to +150 C Isolation voltage Note6 Viso 2000 V Ta=25C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. 1 2 3 1 2 3 (Package name: TO-220FP) 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal (Package name: TO-220FPA) R07DS1409EJ0101 Rev.1.01 Feb. 19, 2019 Ordering code #BG0 Ordering code #BB0
R07DS1409EJ0101 Rev.1.01 Page 2 of 8 Feb. 19, 2019
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125C, VDRM applied On-state voltage VTM — — 1.8 V Tc = 25C, ITM = 15 A, instantaneous measurement Gate trigger voltageNote2 VFGT — — 1.5 V Tj = 25C, VD = 6 V, RL = 6 , Gate trigger curentNote2 IFGT — — 50 mA Tj = 25C, VD = 6 V, RL = 6 , Gate non-trigger voltage VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 4.6 C/W Junction to caseNote3 Critical-rate of rise of off-state commutation voltageNote4 (dv/dt)c 10 — — V/s Tj = 125C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 5. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –5 A/ms 3. Peak off-state voltage VD = 400 V Time Time Time Main Current Main Voltage (di/dt)c VD(dv/dt)c Supply Voltage
R07DS1409EJ0101 Rev.1.01 Page 3 of 8 Feb. 19, 2019 Performance Curves 100 102 103 101 - 40 0 40 80 120 160 Typical Example Maximum On-State Characteristics On-State Voltage (V) On-State Current (A) Rated Surge On-State Current Conduction Time (Cycles at 60Hz) Surge On-State Current (A) Gate Characteristics (I, II and III) Gate Current (mA) Gate Voltage (V) Gate Trigger Voltage vs. Junction Temperature JJunction Temperature (°C) ×100 (%) Gate Trigger Current vs. Junction Temperature Junction Temperature (°C) ×100 (%) 40 1 2 3 102 101 100 10- 1 Tj = 25°C Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage (Tj = t°C) 100 101 1020 101 10- 1 100 101 102 103 104 VGM = 10V IGM = 2A PGM = 5W VGT = 1.5V IFGT I, IRGT I IRGT III VGD = 0.2V PG(AV) = 0.5W 102 103 101 - 40 0 40 80 120 160 Typical Example IRGT I IRGT III IFGT I 103 102 101 101100 102 Gate Trigger Current (DC) ×100 (%) Gate Current Pulse Width (s) Gate Trigger Current vs. Gate Current Pulse Width Typical Example IFGT I IRGT I IRGT III Gate Trigger Current (tw)
R07DS1409EJ0101 Rev.1.01 Page 4 of 8 Feb. 19, 2019 On-State Power Dissipation (W) RMS On-State Current (A) Maximum On-State Power Dissipation RMS On-State Current (A) Case Temperature (°C) Allowable Case Temperature vs. RMS On-State Current RMS On-State Current (A) Ambient Temperature (°C) Allowable Ambient Temperature vs. RMS On-State Current RMS On-State Current (A) Ambient Temperature (°C) Allowable Ambient Temperature vs. RMS On-State Current 100 120 140 160 100 120 140 160 Curves apply regardless of conduction angle 360° Conduction Resistive, inductive loads 100 120 140 160 103 102 101 101 102 103 104 105 100 10- 1 0 2 104 6 8 0 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) Conduction Time (Cycles at 60Hz) No Fins Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads All fins are black painted aluminum and greased Curves apply regardless of conduction angle Resistive, inductive loads Natural convection Conduction Time (Cycles at 60Hz) (°C/W)Transient Thermal Impedance Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 103 104 10- 1 100 101 1020 360° Conduction Resistive, inductive loads 12 14 16 2 104 6 8 12 14 16 2 104 6 8 12 14 16 60×60×t2.3 100×100×t2.3 120×120×t2.3
R07DS1409EJ0101 Rev.1.01 Page 5 of 8 Feb. 19, 2019 101 102 103 104 Rate of Rise of Off-State Voltage (V/s) Breakover Voltage (dv/dt = xV/s) Breakover Voltage (dv/dt = 1V/s) ×100 (%) Rate of Rise of Off-State Voltage (V/s) Breakover Voltage (dv/dt = xV/s) Breakover Voltage (dv/dt = 1V/s) ×100 (%) BreakoverVoltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 100 120 160 140 100 120 160 140 Typical Example Tj = 125°C III Quadrant I Quadrant Typical Example Tj = 150°C 101 102 103 104 BreakoverVoltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 102 103 100 101 Latching Current (mA) Latching Current vs. Junction Temperature Junction Temperature (°C) - 40 0 40 80 120 160 Holding Current (mA) Holding Current vs. Junction Temperature Junction Temperature (°C) Typical Example - 40 0 40 80 120 160 Breakover Voltage vs. Junction Temperature Junction Temperature (°C) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C)×100 (%) 100 120 140 160 Typical Example Junction Temperature (°C) RRepetitive Peak Off-State Current (Tj= 25°C) ×100 (%) Repetitive Peak Off-State Current vs. Junction Temperature - 40 0 40 80 120 160 106 105 104 103 102 Typical Example Repetitive Peak Off-State Current (Tj= t°C) III Quadrant I Quadrant Distribution Typical T2 ,G- - T2+,G+ T2+,G- 102 103 100 101 - 40 0 40 80 120 160 Typical Example VD=12V I Quadrant III Quadrant Distribution Typical
R07DS1409EJ0101 Rev.1.01 Page 6 of 8 Feb. 19, 2019 Gate Trigger Characteristics Test Circuits 330 330 330 C1 = 0.1 to 0.47 F R1 = 47 to 100 C0 = 0.1 F R0 = 100 C0 R0 Load6 A V A V Recommended peripheral components for Triac 6V A V Test Procedure I Test Procedure III Test Procedure II 101100 102 102 101 100 Commutation Characteristics (Tj=150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Rate of Decay of On-State Commutating Current (A/ms) Main Voltage Main Current IT (di/dt)c t VD Time Time (dv/dt)c Typical Example Tj= 150°C IT = 4A t= 500s VD = 200V f = 3Hz Commutation Characteristics (Tj=125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Rate of Decay of On-State Commutating Current (A/ms) 101100 102 102 101 100 Main Voltage Main Current IT (di/dt)c t VD Time Time (dv/dt)c Typical Example Tj= 125°C IT = 4A t= 500s VD = 200V f = 3Hz Minimum Value I Quadrant III Quadrant I Quadrant III Quadrant
R07DS1409EJ0101 Rev.1.01 Page 7 of 8 Feb. 19, 2019 Package Dimensions MASS (Typ) [g] 1.65 Unit: mm Previous CodeRENESAS Code PRSS0003AP-A TO-220FPA 2.7±0.210.0±0.3 0.395±0.2 1.14±0.2 0.69±0.15 +0.19 -0.110.60 2.54±0.252.54±0.25 0.745±0.2 f3.2±0.2 6.9±0.33.2±0.2 4.5±0.2 13.0±0.5 1.95±0.3 15.0±0.3
R07DS1409EJ0101 Rev.1.01 Page 8 of 8 Feb. 19, 2019 Package Dimensions
Ordering Information
Orderable Part Number Package Quantity Note6 Remark Status BCR10FM-12LC#BG0 TO-220FPA 50 pcs./ tube Straight type Mass Production BCR10FM-12LC#BG0 TO-220FPA 50 pcs./ tube :Lead form type BCR10FM-12LC#BB0 TO-220FP 50 pcs./ tube Straight type EOL announced BCR10FM-12LC#BB0 TO-220FP 50 pcs./ tube :Lead form type Notes: 6. Please confirm the specification about the shipping in detail. 5.08±0.20 3.18±0.20 6.68±0.20 f3.18±0.10 0.80±0.20 1.28±0.30 2.76±0.20 4.7±0.2 0.50 2.54±0.20 Max 1.47 3.3±0.2 10.16±0.20 Unit: mm1.9g MASS[Typ. PRSS0003AG-A RENESAS CodeJEITA Package Code Previous CodePackage Name TO-220FP
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