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㹇㹅㹀㹒 Module 㸰㸮㸮㸿㸭㸯㸰㸮㸮㹔 㹎㹐㹄㹋㹀㸰㸮㸮㹕㸯㸰 ᅇ㊰ᅗ㸸 㹁㹇㹐㹁㹓㹇㹒 ᴫ␎ᅗ㸸 㹑㹁㹆㹃㹋㸿㹒㹇㹁 㹂㹇㸿㹅㹐㸿㹋 D i m e n s i o n : 㹙m m㹛 ᭱኱ᐃ᱁ 㸸 㹋㸿㹖㹇㹋㹓㹋 㹐㸿㹒㹇㹌㹅㹑䠄at TC=25䉝 unless otherwise specified 䠅 Item Symbol Condition Rated Value Unit IGBT 䝁 䝺 䜽 䝍 䞉 䜶 䝭 䝑 䝍 㛫㟁ᅽ Collector-Emitter Voltage VCES G-E Short 䠍䠎䠌䠌 㹔 䝀 䞊 䝖 䞉 䜶 䝭 䝑 䝍 㛫㟁ᅽ Gate-Emitter Voltage VGES C-E Short ± 䠎䠌 㹔 䝁 䝺 䜽 䝍 㟁ὶ Collector Current IC DC Tc=85 䉝㻌 䠎䠌䠌 㸿 ICP Pulse 䍺 1ms 䠐䠌䠌 䝁 䝺 䜽 䝍 ᦆኻ Collector Power Dissipation PC Tj=175䉝㻌 䠍䠍䠑䠏 㹕 Tj=150䉝㻌 䠕䠒䠍 FWD ⧞䜚 ㏉䛧 䝢 䞊 䜽 ㏫㟁ᅽ Repetitive peak reverse voltage VRRM 㻌 䠍䠎䠌䠌 㹔 㡰㟁ὶ Forward Current IF 㻌 䠎䠌䠌 㸿 IFM Pulse 䍺 1ms 䠐䠌䠌 㻌 ᭱㻌኱㻌᥋㻌ྜ㻌 㻌ᗘ Maximum Junction Temperature 䠰jMAX ▐᫬ືస䠄㐣㈇Ⲵ䠅 Instantaneous Overload 䠍䠓䠑 Υ ᥋ ྜ ᗘ Junction Temperature Range 䠰䡆 䠉䠐䠌䡚䠇䠍䠑䠌 Υ 㻌 ಖ Ꮡ ᗘ Storage Temperature Range Tstg 䠉䠐䠌䡚䠇䠍䠎䠑 Υ 㻌 ⤯ ⦕ ⪏ ᅽ Isolation Voltage 䠲ISO Terminal to Base AC,1minute 䠎㻘䠑䠌䠌 㹔(RMS) ⥾㻌䜑 㻌௜ 㻌䛡 㻌䝖 㻌䝹 㻌䜽 Mounting Torque Module Base to Heatsink Ftor 䠩 䠒 䠏 㹫 Busbar to Main Terminal 䠩 䠑 䠎

㹇㹅㹀㹒 Module 㸰㸮㸮㸿㸭㸯㸰㸮㸮㹔 㹎㹐㹄㹋㹀㸰㸮㸮㹕㸯㸰 㟁Ẽⓗ≉ᛶ㸸 㹃㹊㹃㹁㹒㹐㹇㹁㸿㹊㹁㹆㸿㹐㸿㹁㹒㹃㹐㹇㹑㹒㹇㹁㹑㻌䠄at Tj=25䉝 unless otherwise specified 䠅 Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT 䝁 䝺 䜽 䝍 㐽᩿㟁ὶ Collector-Emitter Cut-Off Current ICES 䠲䠟䠡= 1200V,䠲䠣䠡= 0V 㸫 㸫 㸯㸮 㹫㸿 䝀 䞊 䝖 㻌 ₃䜜 㟁ὶ Gate-Emitter Leakage Current IGES 䠲䠣䠡= ±20V, 䠲䠟䠡= 0V 㸫 㸫 㸯㸮 ȣ㸿 䝁䝺䜽䝍䞉䜶䝭䝑䝍㛫㣬࿴㟁ᅽ Collector-Emitter Saturation Voltage VCE(sat.) 䠥䠟= 200A,V䠣䠡= 15V (chip level) Tj=25䉝 㸫 㸯㸳㸮 㸰㸮㸮 㹔Tj=125䉝 㸫 㸯㸵㸮 㸫 Tj=150䉝 㸫 㸯㸶㸮 㸫 䝀䞊䝖㻌 䛧䛝䛔್ 㟁 ᅽ 䠣ate-Emitter Threshold Voltage VGE(th.) 䠲䠟䠡= 10V,䠥䠟= 6.7mA 㸲㸶 㸫 㸵㸮 㹔 ධຊᐜ㔞 Input Capacitance Cies 䠲䠟䠡= 25V,䠲䠣䠡= 0V,䡂= 1MH䠶 㸫 㸯㸷㸮 㸫 㹬㹄ฟ ຊ ᐜ 㔞 Output Capacitance Coes 㸫 㸮㸳㸴 㸫 ᖐ㑏ᐜ㔞 Reverse Transfer Capacitance 㻯䡎es 㸫 㸮㸲㸳 㸫 䝀䞊䝖㟁 Ⲵ 㔞 Gate Charge Qg Vcc=600V, Ic=200A, VGE=-15䡚+15V 㸫 㸰㸰㸮㸮 㸫 㹬㹁 Switching Time ୖ᪼᫬㛫 Rise Time tr VCC= IC= RG= VGE= Tj= 600V Ls=38nH 2 0 0 A I n d u c t i v e L o a d 3.6䃈 ±15V 150䉝 㸫 㸴㸮 㸫 㹬㹱 䝍䞊䞁䜸䞁㐜ᘏ᫬㛫 䠰urn-on Delay Time td(on) 㸫 㸯㸯㸮 㸫 ୗ㝆᫬㛫 䠢 all Time tf 㸫 㸰㸮㸮 㸫 䝍䞊䞁䜸䝣㐜ᘏ᫬㛫 Turn-off Delay Time td(off) 㸫 㸳㸮㸮 㸫 FWD 㡰 㟁 ᅽ Peak Forward Voltage 㹔㹄 䠥F= 200A,VGE=0V (chip level) Tj=25䉝 㸫 㸰㸮㸮 㸰㸴㸮 㹔Tj=125䉝 㸫 㸯㸷㸶 㸫 Tj=150䉝 㸫 㸯㸷㸳 㸫 ㏫ ᅇ ᚟ ᫬ 㛫 Reverse Recovery Time 㹲㹰㹰 VCC= IC= RG= VGE= Tj= 600V Ls=38nH 2 0 0 A I n d u c t i v e L o a d 3.6䃈 ±15V 150䉝 㸫 㸰㸮㸮 㸫 㹬㹱 ෆ㒊㓄⥺᢬ᢠ Internal Lead Resistance RCC’+EE’ 㛫㸭 1⣲Ꮚ Main Terminal - Chip / Per 1 Arm 㸫 㸫 㸯 㹫Ȑ ࢫࣥࢱࢡࢲࣥ࢖ Stray Inductance LSCE ➃Ꮚ㸱㸫㸰㛫 Main Terminal㸱 - Main Terminal㸰 㸫 㸱㸮 㸫 㹬 H ⓗ ≉ ᛶ 㸸 㹒㹆㹃㹐㹋㸿㹊㹁㹆㸿㹐㸿㹁㹒㹃㹐㹇㹑㹒㹇㹁㹑 㹁㹦㹟㹰㹟㹡㹲㹣㹰㹧㹱㹲㹧㹡 㹑㹷㹫㹠㹭㹪 㹒㹣㹱㹲㹁㹭㹬㹢㹧㹲㹧㹭㹬 㹋㹧㹬 . 㹒㹷㹮. 㹋㹟㹶. 㹓㹬㹧㹲 ⇕ ᢬ ᢠ Thermal Resistance 䠥䠣䠞䠰 䠮th(j-c) Junction to Case Per 1 Arm (Tc ᐃⅬ䠖䝏䝑䝥┤ୗ䠅 㸫 㸫 㸮㸯㸱 Υ㸭㹕 䠢䠳䠠 㸫 㸫 㸮㸰㸯 ᥋ゐ⇕᢬ᢠ Thermal Resistance 䠥䠣䠞䠰 Rth(c-f) Case to heatsink P e r 1 A r m P a s t e = 1 W / ( m䞉 䉝) 㸫 㸮㸮㸳 㸫 䠢䠳䠠 㸫 㸮㸯㸮 㸫

㹇㹅㹀㹒 Module 㸰㸮㸮㸿㸭㸯㸰㸮㸮㹔 㹎㹐㹄㹋㹀㸰㸮㸮㹕㸯㸰 ≉ᛶᅗ㸸㹁㹆㸿㹐㸿㹁㹒㹃㹐㹇㹑㹒㹇㹁㹑 㹁㹓㹐㹔㹃㹑 0 1 2 3 4 5 100 150 200 250 300 350 400 Collector to Emitter Voltage VCE (V) Collector Current I C (A) Fig.1- Output Characteristics (Typical) Tj=25°C 10V VGE=20V 12V15V13V 11V 0 1 2 3 4 100 150 200 250 300 350 400 Collector to Emitter Voltage VCE (V) Collector Current I C (A) Fig.2- Saturation Voltage Characteristics (Typical) Tj=25°C Tj=125°C VGE=15V Tj=150°C 4 6 8 10 12 100 150 200 250 300 350 400 Gate to Emitter Voltage VGE (V) Collector Current I C (A) Fig.3- Transfer Characteristics (Typical) Tj=25°C Tj=125°C VCE=20V Tj=150°C -1600 -1200 -800 -400 0 400 800 1200 1600 2000 2400 100 200 300 400 500 600 700 800 Total Gate Charge Qg (nC) Collector to Emitter Voltage V CE (V) GatetoEmitterVoltageVGE(V) -20 -15 -10 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) IC=200A Tj=25䉝 Vcc=200V Vcc=400V Vcc=600V 0 50 100 150 200 100 300 1000 3000 10000 Collector Current IC (A) Switching Time t (ns) Fig.5- Collector Current vs. Switching Time tdOFF tf tr(Ic) tdON VCC=600V RG=3.6Ȑ VGE=±15V Tj=125°C Tj=150°C Inductive Load 2 10 303 100 300 1000 3000 10000 Series Gate Impedance RG (Ȑ) Switching Time t (ns) Fig.6- Series Gate Impedance vs. Switching Time VCC=600V IC=200A VGE=±15V Tj=125°C Tj=150°C Inductive Load tf tr(IC) tdON tdOFF

㹇㹅㹀㹒 Module 㸰㸮㸮㸿㸭㸯㸰㸮㸮㹔 㹎㹐㹄㹋㹀㸰㸮㸮㹕㸯㸰 ≉ᛶᅗ㸸㹁㹆㸿㹐㸿㹁㹒㹃㹐㹇㹑㹒㹇㹁㹑 㹁㹓㹐㹔㹃㹑 0 20 40 60 80 100 120 140 160 180 200 Collector Current IC (A) Switching Loss ESW (mJ/Pulse) Fig.7- Collector Current vs. Switching Loss EOFF EON VCC=600V RG=3.6Ȑ VGE=±15V Tj=125°C Tj=150°C Inductive Load ERR 3 10 30 100 0.3 100 300 1000 Series Gate Impedance RG (Ȑ) Switching Loss ESW (mJ/Pulse) Fig.8- Series Gate Impedance vs. Switching Loss EOFF EON VCC=600V IC=200A VGE=±15V Tj=125°C Tj=150°C Inductive Load ERR 0 50 100 150 200 100 300 1000 Forward Current IF (A) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) Fig.10- Reverse Recovery Characteristics of FWD & Inverse Diode (Typical) IRrM trr VCC=600V, VGE=±15V, RG=3.6Ȑ Tj=125°C Tj=150°C 0 200 400 600 800 1000 1200 1400 1600 0.1 0.2 0.5 100 200 500 1000 Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.11- Reverse Bias Safe Operating Area RG=3.6Ȑ, VGE=±15V, Tj<150°C (Chip level) 10-5 10-4 10-3 10-2 10-1 1 101 1x10-3 3x10-3 1x10-2 3x10-2 1x10-1 3x10-1 Time t (s) Transient Thermal Impedance Rth (J-C) (°C/W) Fig.12- Transient Thermal Impedance TC=25°C

1 Shot Pulse

FWD & Inverse Diode IGBT 0 1 2 3 4 100 150 200 250 300 350 400 Forward Voltage V F (V) F (A) Fig.9- Forward Characteristics of FWD (Typical) Tj=25°C Tj=125°C Tj=150°C Forward Current I