PR1001 ZSELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
! Diff used Junction ! Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M ec h a n i c a l D a t a C ! Ca s e : D O - 4 1 , M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic PR1001 P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RM S Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V A v erage Rectified Output Current ( N o t e 1 ) @ T A = 75° C IO 1.0 A Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward V o ltage @I F = 1. 0A V FM 1.28 V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C IRM 2.0 100 µA Revers e Rec overy Time (Note 2) trr 150 250 450 nS T y pical Junction Capacitance (Note 3) Cj 15 pF Operati ng Temperature Range Tj -55 to +150 °C St orage Temperature Range TSTG -55 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 1 of 2 PR1001 – PR1007 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DO-41 Di m Min Max A 24. 5 — B 4.06 5. 21 C 0. 60 0. 80 D 2.00 3. 00 A ll Dimensions in mm Uni tSymbol PR1002 PR1003 PR1004 PR1005 PR1006 PR1007
/G01/G01 I , PEAK FORWARD SURGE CURRENT (A)FSM 1 10 100 NUMBEROF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current Pulse Width8.3ms Single Half-Sine-Wave (JEDEC Method) 100 1 10 100 C, CAP ACITANCE (pF)j V ,REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T =25°C f = 1MHz j 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T ,AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve A Single phasehalf-wave Hz resistive or inductive load 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1.Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 0.01 0.1 1.0 0.6 0.8 1.0 1.2 1.4 I ,INST ANTANEOUS FWD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T =25°Cj Pulse width= 300 µs 2 of 2 PR1001 – PR1007 PR1001 – PR1007 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com