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PPS560, PPS5100 PPS560, PPS5100 Surface Mount Schottky Rectifier Diodes Schottky-Gleichrichterdioden für die Oberflächenmontage Version 2014-08-21 Dimensions - Maße [mm] Nominal Current Nennstrom 5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 60...100 V Plastic case Kunststoffgehäuse PowerSMD Weight approx. Gewicht ca. 0.1 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Green Molding Standard Lieferform gegurtet auf Rolle Halogen-Free Features Vorteile Compatible to industry standard packages Kompatibel zu industrieüblichen Gehäusen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repet. / Surge peak rever. voltage Periodische- / Spitzen-Sperrspg. VRRM [V] / VRSM [V] Forward Voltage Durchlass-Spannung VF [V] Tj = 125°C 1) Forward Voltage Durchlass-Spannung VF [V] Tj = 25°C 1) IF = 2 A IF = 5 A IF = 2 A IF = 5 A PPS560 60 tbd tbd < tbd < 0.69 PPS5100 100 tbd tbd < tbd < 0.88 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 20A 2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 150/165 A 2) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 112 A2s 2) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C
1 Both anode pins connected – Beide Anodenanschlüsse kontaktiert
© Diotec Semiconductor AG http://www.diotec.com/ 1 5.3±0.2 3.3±0.2 4.0±0.2 0.6 0.3±0.1 1.1±0.2 6.5±0.1 0.9 1.8±0.1 LYYWW 0.8±0.15 1.84 1.3±0.2 3.0±0.1
PPS560, PPS5100 Characteristics Kennwerte Leakage current Sperrstrom PPS560 Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM VR = VRRM IR IR IR typ. tbd µA < 150 µA typ. tbd mA Leakage current Sperrstrom PPS5100 Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM VR = VRRM IR IR IR typ. tbd µA < 15 µA typ. tbd mA Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse RthC < 2.0 K/W Typical Junction Capacitance Typische Sperrschichtkapazität VR = 4 V Cj 200 pF 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 [%] IFAV Rated forward current vs. temp. of the terminals [°C]TT,L 150100500