PPNGZ52F120A MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Rugged polysilicon gate cell structure
  • high current handling capability, latch-proof
  • Hermetically sealed package
  • Low package inductance
  • Very low thermal resistance
  • Reverse polarity available upon request: PPNH(G)Z52F120B
  • high frequency IGBT, low switching losses
  • anti-parallel FREDiode (PPNHZ52F120A only) DESCRIPTION SYMBOL MAX. UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ T J ≥ 25 °C BV CES 1200 Volts Collector-to-Gate Breakdown Voltage @ T J ≥ 25 °C, R GS = 1 M Ω BV CGR 1200 Volts Continuous Gate-to-Emitter Voltage V GES +/-20 Volts Transient Gate-to-Emitter Voltage V GEM +/-30 Volts Continuous Collector Current Tj= 25 °C Tj= 90 °C IC25 IC90 Amps Peak Collector Current (pulse width limited by T jmax ,) Tj= 25 °C Tj= 90 °C ICM(25) ICM(90) 104 Amps Avalanche energy (single pulse) @ I C = 25A, V CC = 50V, L= 200 µH, R G = 25 Ω , Tj= 25 °C E AS 65 mJ Short circuit current (SOA) , V CE ≤ 1200V, T J = 150 °C, tsc ≤ 10 µs IC( sc ) 260 A Short circuit (reverse) current (RBSOA) , V CE ≤ 1200V, T J = 150 °C IC( sc )RBSOA 66 A Power Dissipation P D 300 Watts Junction Temperature Range T j -55 to +150 °C Storage Temperature Range T stg -55 to +150 °C Continuous Source Current (Body Diode, PPNHZ52F120A only) IS 50 Amps Pulse Source Current (Body Diode, PPNHZ52F120A only) ISM 100 Amps Thermal Resistance, Junction to Case θJC 0.42 °C/W Maximum Ratings @ 25°°C (unless otherwise specified)

7516 Central Industrial Drive

Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR TO-258

Datasheet# MSC1376.PDF PPNGZ52F120A PPNHZ52F120A PPC INC. DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) BV CES V GS = 0 V, I C = 250 µA 1200 V Gate Threshold Voltage V GE( th ) V CE = V GE , I C = 350 µA 4.5 5.5 6.5 V Gate-to-Emitter Leakage Current IGES V GE = ± 20V DC , V CE = 0 T J = 25 °C T J = 125 °C ±100 ±200 nA Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) ICES V CE =0.8 •BV CES T J = 25 °C V GE = 0 V T J = 125 °C 250 1000 µA Collector-to-Emitter Saturation Voltage (1) V CE(sat) V GE = 15V, I C = 25A T J = 25 °C I C = 25A T J = 125 °C I C = 60A T J = 25 °C I C = 30A T J = 125 °C 2.7 3.3 3.4 4.3 3.2 3.9 V Forward Transconductance (1) g fs V CE = 20 V; I C = 25 A 8.5 20 S Input Capacitance Output Capacitance Reverse Transfer Capacitance C ies C oes C res V GE = 0 V, V CE = 25 V, f = 1 MHz 1650 250 110 2200 380 160 pF INDUCTIVE LOAD, Tj= 125°° C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri E on td(off) tfi E off V GE = 15 V, V CE = 600 V, IC = 25 A, R G = 47 Ω , L= 100 µH note 2, 3 3.6 420 2.4 110 100 560 ns ns mJ ns ns mJ INDUCTIVE LOAD, Tj= 125°° C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri E on td(off) tfi E off V GE = 15 V, V CE = 600 V, IC = 50 A, R G = 47 Ω , L= 100 µH note 2, 3 420 4.2 ns ns mJ ns ns mJ Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Q g Q ge Q gc V GE = 15 V, V CE = 600V, I C = 25A 160 nC Antiparallel diode forward voltage (PPNHZ52F120A only) V F IE = 10 A T J = 25 °C IE = 10 A T J = 100 °C 2.4 3 V V Antiparallel diode reverse recovery time (PPNHZ52F120A only) trr IE = 10 A, dI E /dt= 100 A/us, T J = 25 °C IE = 10 A, dI E /dt= 800 A/us, T J = 125 °C 60 TBD ns ns Antiparallel diode reverse recovery charge (PPNHZ52F120A only) Q rr IE = 10 A, dI E /dt= 100 A/us, T J = 25 °C IE = 10 A, dI E /dt= 800 A/us, T J = 125 °C 800 TBD nC nC Antiparallel diode peak recovery current (PPNHZ52F120A only) IRM IE = 10 A, dI E /dt= 100 A/us, T J = 25 °C IE = 10 A, dI E /dt= 800 A/us, T J = 125 °C 22 TBD A A Electrical Parameters @ 25°°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures. (3) switching losses include “tail” losses (4) Microsemi Corp. does not manufacture the igbt die; contact company for details.

Datasheet# MSC1376.PDF PPNGZ52F120A PPNHZ52F120A PPC INC. Mechanical Outline