PPJT7600

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 Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in comply with EU RoHS 2011/65/EU directives.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-363 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0002 ounces, 0.006 grams  Marking: T60 PARAMETER SYMBOL N-Ch LIMIT P-Ch LIMIT UNITS Drain-Source Voltage V DS 20 -20 V Gate-Source Voltage V GS + 8 + 8 V Continuous Drain Current I D 1 -0.7 A Pulsed Drain Current (Note 4) I DM 4 -2.8 A Power Dissipation Ta=25oC PD 350 mW Derate above 25oC 2.8 mW/ oC Operating Junction and Storage Temperature Range T J,TSTG -55~150 oC Thermal resistance - Junction to Ambient (Note 3) RθJA 357 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted)

August 16,2013-REV.00 Page 2 N-Channel Electrical Characteristics (TA=25 o C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV DSS V GS=0V, ID= 250uA 20 - - V Gate Threshold Voltage V GS(th) V DS=VGS, ID= 250uA 0.7 0.8 1.1 V Drain-Source On-State Resistance R DS(on) VGS= 4.5V, ID= 1A - 114 150 mΩ VGS= 2.5V, ID= 0.7A - 160 215 VGS= 1.8V, ID= 0.3A - 280 400 Zero Gate Voltage Drain Current I DSS V DS= 20V, VGS=0V - 0.01 1 uA Gate-Source Leakage Current I GSS V GS=+8V, VDS=0V - + 2 + 10 uA Dynamic Total Gate Charge Q g VDS=10V, ID=1A, VGS=4.5V (Note 1,2) - 1.6 - nC Gate-Source Charge Q gs - 0.3 - Gate-Drain Charge Q gd - 0.41 - Input Capacitance Ciss VDS=10V, VGS=0V, f=1.0MHZ - 105 - pF Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 15 - Switching Turn-On Delay Time td (on) VDD=10V, ID=1A, VGS=4.5V, RG=6Ω (Note 1,2) - 5.8 - ns Turn-On Rise Time tr 25.7 - Turn-Off Delay Time td (off) 41 - Turn-Off Fall Time tf - 31 - Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS --- - - 1 A Diode Forward Voltage V SD I S= 1A, VGS=0V 0.85 1.2 V

August 16,2013-REV.00 Page 3 P-Channel Electrical Characteristics (TA=25 o C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV DSS V GS=0V, ID= -250uA -20 - - V Gate Threshold Voltage V GS(th) V DS=VGS, ID= -250uA -0.5 -0.64 -1 V Drain-Source On-State Resistance R DS(on) mΩ VGS= -2.5V, ID= -0.6A - 310 420 Zero Gate Voltage Drain Current I DSS V DS=-20V, VGS=0V - -0.01 -1 uA Gate-Source Leakage Current I GSS V GS=+8V, VDS=0V - + 3.5 + 10 uA Dynamic Total Gate Charge Q g VDS=-10V, ID=-0.7A, VGS=-4.5V (Note 1,2) - 2.2 - nC Gate-Source Charge Q gs - 0.4 - Gate-Drain Charge Q gd - 0.5 - Input Capacitance Ciss VDS=-10V, VGS=0V, f=1.0MHZ - 165 - pF Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 14.7 - Switching Turn-On Delay Time td (on) VDD=-10V, ID=-0.7A, VGS=-4.5V, RG=6Ω (Note 1,2) - 8.9 - ns Turn-On Rise Time tr 37 - Turn-Off Delay Time td (off) 127 - Turn-Off Fall Time tf - 70 - Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS --- - - -1 A Diode Forward Voltage V SD I S=-1A, VGS=0V -0.86 -1.2 V NOTES : 1. Pulse width< 300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. R ΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited.

August 16,2013-REV.00 Page 4 N-Channel TYPICAL CHARACTERISTIC CURVES Fig.1 On-Region Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature Fig.5 On-Resistance Variation with VGS. Fig.6 Body Dlode Characterlslcs

August 16,2013-REV.00 Page 5 N-Channel TYPICAL CHARACTERISTIC CURVES Fig.7 Gate-Charge Characteristics Fig.8 Threshold Voltage Variation with Temperature. Fig.9 Capacitance vs. Drain-Source Voltage.

August 16,2013-REV.00 Page 6 P-Channel TYPICAL CHARACTERISTIC CURVES Fig.1 On-Region Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature Fig.5 On-Resistance Variation with VGS. Fig.6 Body Dlode Characterlslcs

August 16,2013-REV.00 Page 7 P-Channel TYPICAL CHARACTERISTIC CURVES Fig.7 Gate-Charge Characteristics Fig.8 Threshold Voltage Variation with Temperature. Fig.9 Threshold Voltage Variation with Temperature.

August 16,2013-REV.00 Page 8 PART NO PACKING CODE VERSION MOUNTING PAD LAYOUT Part No Packing Code Package Type Packing type Marking Version PJT7600_R1_00001 SOT-363 3K pcs / 7” reel T60 Halogen free PJT7600_R2_00001 SOT-363 10K pcs / 13” reel T60 Halogen free

August 16,2013-REV.00 Page 9 Disclaimer

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