PNM723T703E0M-2 GWSEMI | Alldatasheet

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Technical content

PNM723T703E0M-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary V DS (V) R DS(on) (Ω) V GS(th) (V) I D (A) 40 7.5@ V GS =10V 0.5 to 1.5 0.18 Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage V DSS I D =10μA,V GS =0V 40 - - V Zero Gate Voltage Drain Current I DSS V DS =40V,V GS =0V - - 0.5 μA Gate-Body Leakage Current I GSS V DS =0V,V GS =±20V - - ±10 μA Gate Threshold Voltage V GS(th) V DS GS , I D =250μA 0.5 - 1.5 V Static Drain-Source On-Resistance R DS(ON) V GS =5V, I D =0.05A - - 7.5 Ω V GS =10V, I D =0.5A - - 7.5 Ω Diode Forward Voltage V SD - 0.72 1 V Maximum Body-Diode Continuous Current I S - - 0.2 A DYNAMIC PARAMETERS Input Capacitance C ISS V GS =0V, V DS =25V, f=1MHz - - 40 pF Output Capacitance C DSS - - 20 pF Reverse Transfer Capacitance C RSS - - 5 pF Total Gate Charge Qg I D =0.2A, V DS =6V, V GS =4.5V 0.23 nC Gate-to-Source Charge Qgs 0.05 Gate-to-Drain(Miller) Charge Qgd 0.06

Description

Electrical characteristics per line@25℃( unless otherwise specified) D（3） S（2） G（1） PNM723T703E0M-2 N-Channel MOSFET Marking P7

Min. Typ. Max. Units SWITCHING PARAMETERS Turn-On Delay Time t d(on) V DS =30V, V GS =10V, R G =25Ω, R L =150Ω I D =0.2A - - 20 ns Turn-Off Delay Time t d(off) - - 20 ns Reverse recovery time trr IF=0.2A, dI/dt=100A/μs 11.3 nS Reverse recovery charge Qrr 7.5 nC Reverse recovery current Irrm 0.66 A Rating Symbol Value Units Drain-Source Voltage V DS 4 0 V Gate-Source Voltage V GS ±20 V Drain Current Continuous I D 0 . 1 8 A Pulsed I D 0 . 3 6 A Total Power Dissipation T A =25℃ P D 150 mW Junction and Storage Temperature Range T J , T STG -55~+150 ℃ Absolute maximum rating@25℃ Electrical characteristics per line@25℃( unless otherwise specified) PNM723T703E0M-2 N-Channel MOSFET

Fig 1. Output Characteristics F i g 2 . T r a n s f e r C h a r a c t e r i s t i c s F i g 3 . On-Resistance vs. Drain Current F i g 4 . C a p a c i t a n c e V GS = 6 . 0 V V GS = 4 . 5 V V GS = 3 . 5 V 0.2 0.4 0.6 0.8 1.0 I D – Drain Current (A) V DS Drain Source Volta g e V T = 2 5 ° C T = 5 5 ° C T=125°C 0.2 0.4 0.6 0.8 1.0 V GS Gate to Source Volta g e V I D – Drain Current (A) V GS = 7 . 0 V V GS = 3 . 0 V V GS =11.5V r DS(on) – On-Resistance ( Ω) I D Drain Current A C iss C Oss C Rss C – Capacitance (pF) V DS Drain Source Volta g e V 0 4 8 12 16 20 PNM723T703E0M-2 N-Channel MOSFET Typical Characteristics

A 0.40 0.50 A1 0.00 0.05 b 0.15 0.27 b1 0.20 0.37 c 0.06 0.16 D 1.10 1.30 E 1.10 1.30 E1 0.70 0.90 e 0.80 Ref. F 0.15 0.25 θ 7° PNM723T703E0M-2 N-Channel MOSFET Plastic surface mounted package; 3 leads SOT-7 PACKAGE OUTLINE