PN930 FAIRCHILD | Alldatasheet
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Discrete POWER & Signal Technologies NPN General Purpose Amplifier PN930 This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN930 PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92 1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 04 5V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 45 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 nA, IC = 0 5.0 V ICEO Collector Cutoff Current V CE = 5.0 V 2.0 nA ICBO Collector Cutoff Current V CB = 45 V, IE = 0 10 nA ICES Collector Cutoff Current V CE = 45 V, IE = 0 VCE = 45 V, IE = 0, TA = 170 °C nA µ A IEBO Emitter Cutoff Current V EB = 5.0 V, IC = 0 10 nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 10 µA VCE = 5.0 V, IC = 10 µ A, T = − 55 °C VCE = 5.0 V, IC = 500 µ A VCE = 5.0 V, IC = 10 mA 100 150 300 600 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.6 1.0 V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 5.0 V, f = 1.0 MHz 8.0 pF hfe Small-Signal Current Gain I C = 500 µA, VCE = 5.0 V, f = 20 MHz I C = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz 1.5 150 600 hib Input Impedance I C = 1.0 mA, VCE = 5.0 V, 25 32 Ω hrb Voltage Feedback Ratio f = 1.0 kHz 600 x10 − 6 hob Output Admittance 1.0 µ mho NF Noise Figure VCE = 5.0 V, IC = 10 µA, R g = 10 kΩ , BW = 15.7 kHz 3.0 dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%