PN918

PN918 FAIRCHILD | Alldatasheet

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This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN918 *MMBT918 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." MMBT918 C B E SOT-23 Mark: 3B PN918 C B E TO-92 Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 4.0 mA, VCE = 10 V, f = 100 MHz

600 MHz

Cobo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz VCB = 0, IE = 0, f = 1.0 MHz 1.7 3.0 pF pF Cibo Input Capacitance V BE = 0.5 V, IC = 0, f = 1.0 MHz 2.0 pF NF Noise Figure I C = 1.0 mA, VCE = 6.0 V, RG = 400Ω , f = 60 MHz 6.0 dB FUNCTIONAL TEST G pe Amplifier Power Gain V CB = 12 V, IC = 6.0 mA, f = 200 MHz 15 dB PO Power Output V CB = 15 V, IC = 8.0 mA, f = 500 MHz 30 mW η Collector Efficiency V CB = 15 V, IC = 8.0 mA, f = 500 MHz 25 % *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% VCEO( sus) Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 µ A, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V ICBO Collector Cutoff Current V CB = 15 V, IE = 0 VCB = 15 V, TA = 150°C 0.01 1.0 µ A µ A hFE DC Current Gain I C = 3.0 mA, VCE = 1.0 V 20 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.0 V NPN RF Transistor (continued)

DC Typical Characteristics Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 20VCB CBO Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 30 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V)BESA T 25 °C C ββ = 10 - 40 °C 125 °C Collector-Emitter Saturation Voltage vs Collector Current P4 3 0.1 1 10 30 0.05 0.1 0.15 0.2 0.25 0.3 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESA T C ββ = 10 25 °C - 4 0 °C 125 °C Base-Emitter ON Voltage vs Collector Current P4 3 0.1 1 10 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V) BE(ON) C V = 5VCE 25 °C - 40 °C 125 °C Typical Pulsed Current Gain vs Collector Current P4 3 0.1 0.2 0.5 1 2 5 10 20 50 100 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAINC FE 125 °C 25 °C - 40 °C Vce = 5V NPN RF Transistor (continued)

AC Typical Characteristics NPN RF Transistor (continued) Contours of Constant Noise Figure Small Signal Current Gain vs. Collector Current Gain Bandwidth Product vs Collector Current P4 3 1 10 20 50 100 200 100 120 140 I - COLLECTOR CURRENT (mA) f - GAIN BANDWIDTH PRODUCT (MHz) V = 5V C T ce Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 0.1 100 V - COLLECTOR VOLTAGE(V) CAPACITANCE (pF) Cob Cib f = 1.0 MHz ce Contours of Constant Gain Bandwidth Product (fT) POWER DISSIPA TION vs AMBIENT TEMPERATURE 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIPATION (mW) TO-92 SOT-23 D °°°°°

Common Emitter Y Parameters vs. Frequency Input Admittance vs. Collector Current-Output Short Circuit Input Admittance vs. Collector Current-Output Short Circuit Input Admittance vs. Frequency-Output Short Circuit Forward Transfer Admittance vs. Frequency-Output Open Circuit Forward Transfer Admittance vs. Collector Current-Output Short Circuit Forward Transfer Admittance vs. Collector Current-Output Short Circuit NPN RF Transistor (continued)

Common Emitter Y Parameters vs. Frequency (continued) Reverse Transfer Admittance vs. Frequency-Input Short Circuit Output Admittance vs. Collector Current-Input Short Circuit Output Admittance vs. Collector Current-Input Short Circuit Output Admittance vs. Frequency-Input Short Circuit Reverse Transfer Admittance vs. Collector Current-Input Short Circuit Reverse Transfer Admittance vs. Collector Current-Input Short Circuit NPN RF Transistor (continued)

(NOTE 2) 175 pF 50 pF

2.2 KΩΩΩΩΩ

• VCC RFC (NOTE 1) RFC FIGURE 1: 500 MHz Oscillator Circuit 500 mHz Output into 50ΩΩΩΩΩ VCC NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long NPN RF Transistor (continued)