MPS5179 FAIRCHILD | Alldatasheet

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MPS5179 / MMBT5179 / PN5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V VCBO Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C MPS5179 MMBT5179 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN/MPS5179 *MMBT5179 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 357 556 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." C B E TO-92 C B E SOT-23 Mark: 3C Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation PN5179 C E B TO-92 5179, Rev B

MPS5179 / MMBT5179 / PN5179 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test C onditions Min Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS VCEO( sus) Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 12 V V(BR )CBO Collector-Base Breakdown VoltageIC = 1.0 µA, IE = 0 20 V V(BR )EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 2.5 V ICBO Collector Cutoff Current V CB = 15 V, IE = 0 VCB = 15 V, TA = 150°C 0.02 1.0 µA µA hFE DC Current Gain I C = 3.0 mA, VCE = 1.0 V 25 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.0 V fT Current Gain - Bandwidth Product IC = 5.0 mA, VCE = 6.0 V, f = 100 MHz 900 2000 MHz C cb Collector-Base Capacitance V CB = 10 V, IE = 0, f = 0.1 to 1.0 MHz 1.0 pF hfe Small-Signal Current Gain I C = 2.0 mA, VCE = 6.0 V, f = 1.0 kHz 25 300 rb’Cc Collector Base Time Constant I C = 2.0 mA, VCB = 6.0 V, f = 31.9 MHz 3.0 14 ps NF Noise Figure I C = 1.5 mA, VCE = 6.0 V, R S = 50Ω , f = 200 MHz 5.0 dB FUNCTIONAL TEST G pe Amplifier Power Gain V CE = 6.0 V, IC = 5.0 mA, f = 200 MHz 15 dB PO Power Output V CB = 10 V, IE = 12 mA, f ≥ 500 MHz 20 mW *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10) NPN RF Transistor (continued)

MPS5179 / MMBT5179 / PN5179 DC Typical Characteristics NPN RF Transistor (continued) DC Current Gain vs Collector Current 0.001 0.01 0.1 100 150 200 250 I - COLLECTOR CURRENT (A) h - DC CURRENT GAIN FE C V = 5VCE - 40 ºC 25 °C 125 °C Collector-Emitter Saturation Voltage vs Collector Current P4 0 0.1 1 10 20 30 0.05 0.1 0.15 0.2 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT - 40 ºC 25 °C C β = 10 125 °C Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 20 30 0.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V)BESAT C β = 10 - 40 ºC 25 °C 125 °C Base-Emitter ON Voltage vs Collector Current 0.01 0.1 1 10 50 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V =5VCE - 40 ºC 25 °C 125 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 20VCB º CBO

MPS5179 / MMBT5179 / PN5179 AC Typical Characteristics TO-92SOT-23 Test Circuit 1000 pF1000 pF (NOTE 2) 175 pF 50 pF

2.2 KΩΩΩΩΩ

  • VCC RFC (NOTE 1) RFC 500 mHz Output into 50ΩΩΩΩΩ VCC NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long D POWER DISSIPATION vs AMBIENT TEMPERATURE 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIPATION (mW) °°°°° FIGURE 1: 500 MHz Oscillator Circuit NPN RF Transistor (continued)