PN5138 FAIRCHILD | Alldatasheet
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Discrete POWER & Signal Technologies PNP General Purpose Amplifier PN5138 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN5138 PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92 1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µ A, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector Cutoff Current V CB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 65 °C 3.0 nA µA ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 0.1 µ A VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA 800 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 1.0 V VBE(on) Base-Emitter On Voltage V CE = 10 V, IC = 10 mA 1.0 V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 5.0 V, f = 1.0 MHz 7.0 pF Cib Input Capacitance V EB = 0.5 V, f = 1.0 MHz 30 pF hfe Small-Signal Current Gain I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz I C = 0.5 mA, VCE = 5.0 V, f = 20 MHz 1.5 1000 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%