PN5136 | DigiCamel IC Datasheet

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FAIRCHILD SEMICONDUCTOR 64 DE I 3469674 O027459 4 t \\ 3469674 FAIRCHILD SEMICONDUCTOR 84D 27459 D a PN5135/FTSOS135 7-27-23 PN5136/FTSO5136 A Schlumberger Company PN51 37/FTSO5137 NPN Small Signal General Purpose Amplifiers . © Po... 625 mW @ Ta = 25°C PACKAGE © Veco ... 25 V (Min) (PN/FTSO5135) PN5135 TO-92 © he ... 50-600 @ 10 mA (PN/FTSO5135), 20-400 @ 150 mA PN5136 TO-92 (PN/FTSO5136/7) PN5137 TO-92 . © fr... 40 MHz (Min) FTSO5135 TO-236AA/AB © Complements ... PN5142, PN5143 FTSO5136 TO-236AA/AB FTSO5137 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) t Temperatures Storage Temperature -58C to 150°C Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) . Total Dissipation at PN FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25° C Case Temperature 1.0 W Voltages & Currents 5135 5136/7 Vceo Collector to Emitter Voltage 25V 20V (Note 4) Veeo Collector to Base Voltage 30V 30V Vees Collector to Emitter Voltage 30V 30V Veso Emitter to Base Voltage 40V 3.0V | lo Collector Current 200 mA 200 mA ; ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) H 5135 5136 | SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS BVces. Collector to Emitter Breakdown Vv Ic = 100 pA, Vee = 0 Voltage BVcso _| Collector to Base Breakdown V | ic = 100 pA, le =0 Voltage BVeco ‘| Emitter to Base Breakdown Vile =10 pA, le =0 Voltage leao Emitter Cutoff Current nA | Ves =2.0V, le = 0 10 BA Ves = 4.0 V, le = 0 NoTEs: 1. These ratings ar limiting values above which the serviceability of any Individual semiconductor device may be impaired. 2. ‘These are steady state limits. The factory should be consulted on applications Involving pulsed or low duty cycle operations 3. These ratings give a maximum junction temperature of 150° C and (TO-92) junction-to-case thermal resistance of 125° C/W (derating factor of 6.0 mW/"O}; junction-to-amblent thermal resistance of 200° CAW (derating factor of :0 mW/* C}; (TO-236) junction-to-ambient thermal resistance of 387° CW (derating factor of 2.8 mW/*C). 4. Rating refers 0.2 high current point where collector to emitter voltage is lowest & Pulse conditions: length = 900 ys; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T14S, Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. PCC RC 3-179

. FAIRCHILD SEMICONDUCTOR a4 DE Bp syesezy Ooe?74b0 O I . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27460 D PN5135/FTSO5135 : PN5136/FTSO5136 T-2%°- 23 PN5137/FTSO5137 a : ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) 5135 5136 SYMBOL | CHARACTERISTIC MIN MAX| MIN MAX | UNITS| TEST CONDITIONS : leao Collector Cutoff Current nA | Vee = 15V, le =0 : 100 | nA | Veo =20V, le =0 uA | Vos = 15V, le =0 i Ta = 65°C 10 | uA | Veo =20V, le = 0, Ta = 65°C tre DG Pulse Current Gain (Note §) 600 Te = 10 MA, Vee = 10 V lo = 2.0 MA, Vee = 1.0 V lo = 150 MA, Vee = 1.0 V lc = 30 MA, Vee = 1.0 Veco | Collector to Emitter Sustaining V__ [tc =1.0 mA (pulsed), le = 0 Voltage (Notes 4 & 5) Veeas | Collector to Emitter Saturation 1.0 V_ | tc=100 mA, le = 10mA Voltage (Note 5) V_| le = 150 mA, le = 15 mA Veron | Base to Emitter “On” 1.0 V__ | tc = 100 mA, Vee = 10V Voltage (Note 5) 14 V_| le = 150 mA, Vee = 1.0V Vecsey | Base to Emitter Saturation V_ [tc =100 mA, lp =10V Voltage (Note 5) V_| c= 150 mA, le =15V Cen Collector to Base Capacitance | | 25 | | 95 | pF _| Veo =10V, le=0,=1.0MHz Coo Emitter to Base Capacitance | | |_| 85 | pF__| Veo=0.5V, lo=0,f=1.0MHz [rel Magnitude of Common Emitter Ic =30 mA, Vee = 10 V, Small Signal Current Gain f= 20 MHz Ie = 50 mA, Vee = 5.0 V, {= 20 MHz 5137 SYMBOL | CHARACTERISTIC MIN__MAX_| UNITS TEST CONDITIONS BVees | Collector to Emitter Breakdown Vic = 100 WA, Vee =0 Voltage BVcso | Collector to Base Breakdown V [tc =100 HA, le =0 Voltage BVevo | Emitter to Base Breakdown Voltage | 30 | | V_ | le=10uA,lo=0 leno Emitter Cutoff Current |_| 100 | nA |Ves=20V, b=0 3 leso Collector Cutoff Current 100 | nA |Vco=20V, le =0 10 | yA | Veo =20V, le =0, Ta = 65°C bre DC Pulse Current Gain (Note 5) Ic = 150 MA, Vee = 1.0 V lo =80 MA, Voe = 1.0 V LS 3-180 . 1

FAIRCHILD SEMICONDUCTOR 84 DEM 3469674 OOe74b1 2 | ' 3469674 FAIRCHILD SEMICONDUCTOR 84D 27461 OD PN5135/FTSO5135 PN5136/FTSO5136 pnsia7/FTsosiz7 1 24-22 a ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) ° 5137 SYMBOL | CHARACTERISTIC MIN _MAX_| UNITS TEST CONDITIONS j Vezomm | Collector to Emitter Sustaining V__ [le =1.0 mA (pulsed), lo = 0 Voltage (Notes 4 & 5) { Veews | Collector to Emitter Saturation V__ [tc = 150 mA, fe = 15 mA : Voltage (Note §) Yocow | Base to Emitter “On” Voltage (Note) |__| 41 | V__ | le= 150A, Voe = 1.0V Vacs | Base to Emitter Saturation Voltage 1 V__ [lc = 150 mA, lp = 15V ¥ (Note 5) Sag Gotetor to Bass Capactance | 95 | oF [Wee = 0V. b= 0 T= LOM Gor [Emitter to Base Capacitance | (| 88 | pF | Vee = 0.5 V.le=0.1= 0 Mie Thal Magnitude of Common Emitter Io = 50 mA, Vor = 5.0 V, Small Signal Current Gain f= 20 MHz 3-181

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27462 D

———s PN5138/FTSO5138 el ifi me conpery PNP Low Level Amplifier T- A9-23 a ; ; © hee... 50 (Min) @ 100 nA & 10 mA PACKAGE : © Vero... -30 V (Min) PN5138 TO-92 FTSO5138 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature 85°C to 150°C : Operating Junction Temperature 150°C ! Power Dissipation (Notes 2 & 3) . Total Dissipation at PN FTSO 25°C Ambient Temperature 0.625W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Veeo Collector to Emitter Voltage -30V Veeo Collector to Base Voltage -30V Veso Emitter to Base Voltage 5.0V | ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) , SYMBOL | CHARACTERISTIC [MIN | MAX | UNITS: TEST CONDITIONS BVcoo | Collector to Base Breakdown Voltage | -30| | V_|Ic= 100yA, le=0 BVeso | Emitter to Base Breakdown Voltage | -60| | V__|le=100 uA, lo=0 Toxo Collector Cutoff Current TA | Ves = -20V, le =0 uA | Vea = -20V, le = 0, Ta = 65°C bre DC Current Gain 800 Te = 100 uA, Voe = 10 V lc = 1.0 MA, Vee = 10 V bre DC Pulse Current Gain (Note §) [50 [| [c= 10 mA, Vee = —10V Veeomu | Collector to Emitter Sustaining Voltage | -30 V__|le=10 mA (pulsed), fa =0 (Notes 4 & 5) Noes: { 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2 Thete oe steady state limite, The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give @ maximum junction temperature of 150°C and {TO-92) junction-to-case thermal resistance of 125° C/W (derating factor of 8.0 TWU"O) ucton-to-amblent Wormal rsisance of 200° CW (rating factor of 6:0 mW/*C); (TO-236) junction-to-amblent thermal resistance of 357° CAW (derating factor of 28 mW/*C). 4. ating rters to a high current point where collector to emitter voltage Is lowest 5. Pulse conditions: tength = 300 ys; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T219. * Package mounted on 98.5% alumina @ mm x 8 mm x 0.6 mm. ee 3-182

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27463 Dy :

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27464 Dam

—— PN5139/FTSO5139 —EEe PNP Small Signal General Purpose lumber a . ° 9 P Amplifier & Switch T- 29-13 ; ES i : © Vero «.. -20 V (Min) PACKAGE : : © hire ... 40 (Min) @ 10 mA PN5139 T0-92 : © fy... 300 MHz (Min) FTSO5139 TO-236AA/AB 1 © Ce... 5.0 pF (Max) @ -10V ABSOLUTE MAXIMUM RATINGS (Note 1) | ‘Temperatures . 1 Storage Temperature -55°C to 150°C : Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN FTSO : 25°C Ambient Temperature 0625 W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage -20V (Note 4) Vcso Collector to Base Voltage -20V Veso Emitter to Base Voltage 6.0V le Collector Current 100 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) ‘SYMBOL | CHARACTERISTIC [min | MAX | UNITS. TEST CONDITIONS BVceo _| Collector to Base Breakdown =20 V_ |[lc=100 uA, le=0 Voltage BVers | Collector to Emitter Breakdown V_|to=100 pA, Veo=0 i Voltage BVeso | Emitter to Base Breakdown 6.0 V_[le=100 nA, lo=0 Voltage lees Collector Reverse Current TA |Vce=—15V, Ves =0 . uA _ | Vor =—15 V, Veo = 0, Ta = 65°C. Tre DC Current Gain Te = 100 pA, Vee = —10V Ig = 1.0 MA, Vee = -10 V fre DC Pulse Current Gain (Note 5) 40 Ie = 10 MA, Vee =—1.0V 15 lo = 50 MA, Vee = -10V noTes: MO Tnese ratings are limiting values above which the serviceability of any Individual semiconductor device may be impaired. 2. Those are steady state limits, Te factory should be consulted on applications involving pulsed or low duty cycle operations. 3 Those ratings give a maximum junction femporature of 150°C and (TO-82)junction-to-case thermal resistance of 125° CMW (derating factor of 8.0 hw" Oh junetlon-to-ambiant trermal resistance of 200° CAW (derating Tactor of 60 mW/* C); (7-236) junction-to-ambient thermal resistance of '357°CAW (drating factor of 2 mW/*C). 4, Rating refers to 8 high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 200 ps: duty cycle = 1%. 8 For product family characterise curves, refer to Gurve Set T2tS. package mounted on 99.5% alumina 8 mm x 8 mm x 6 mm. el 3-184 : i . :

iF ; AIRCHILD SEMICONDUCTOR 8y DEBpsyeae7y ooe7uns o .- 3469674 FAIRCHILD SEMICONDUCTOR 84D 27465 D PN5139/FTSO5139 ae i . ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) { SYMBOL | CHARACTERISTIC [_MIN | MAX | UNITS TEST CONDITIONS Vee | Collector to Emitter Saturation 0.15 | V_ |lc=1.0mA, le=0.1 mA Voltage Veeway | Pulsed Collector to Emitter “020 | V |lc=10mA, la=1.0mA Saturation Voltage (Note 5) -05 | v_|Ic=50mA,le=5.0mA Vocus | Pulsed Base to Emitter “O70 | V [ic=10mA,lb=1.0mA - Saturation Voltage (Note 5) -0.75|-1.25 | _V__|lc=50mA, lo = 5.0 mA Vecoun | Collector to Emitter Sustaining V__| te = 10 mA (pulsed), lo = 0 P| Voltage (Note 5) Cov Collector to Base Capacitance [| 60 | pF | Voo=~10V, e=0,f= 1.0 MHz Cov Emitter to Base Capacitance |__| 80 | oF | Ves=~-05V, l= 0, f= 1.0 MHz Thiel Magnitude of Small Signal Te = 10 MA, Vee = -20V, Current Gain f= 100 MHz ten. | Turn On Time Te ~ 50 MA, lor ~ 5.0 mA ; (test circuit no. 407) tow Turn Off Time Te = 50 MA, Is: ~ 5.0 mA, (test circuit no. 407) loo ~ 5.0 mA i i t 3-185 i t vt

FAIRCHILD SEMICONDUCTOR 84 DE Bp syese74 o027474 o ii FAIRCHILD FDLL456/457/458/459 A Schlumberger Company 1N456A/457A/458A/459A Low Leakage Diodes . @ Ip...25 nA (MAX) @ WIV PACKAGES * C...6.0 pt (MAX) 1N456, DO-35 1N457 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 1N458 0-35 Temperatures 1N459 DO-35 Storage Temperature Range 65°C to +200°C. 1N456A DO-35 Maximum Junction Operating Temperature +175°C 4N457A, DO-35 Lead Temperature +260°C 1N458A DO-35 1N459A, DO-35 Power Dissipation (Note 2) } ‘Maximum Total Power Dissipation at 26°C Ambient soomw —- FOLL456 LL-34 Linear Power Derating Factor (From 25°C) 3.33 mW/*C FDLL457 LL-34 FDLL458 LL-34 Maximum Voltage and Currents 1N456/A 1N457/A 1N458/A 1N459/A FDLL459 LL-34 WIV Working Inverse Voltage 25V 60V 125V175V FDLL456A LL-34 lo Average Rectified Current 200 mA FDLL457A LL-34 Ip Continuous Forward Current 500mMA —EDLLAS58A LL-34 if Peak Repetitive Forward Current 600mMA ELL 459A LL34 if(surge) Peak Forward Surge Current Pulse Width = 1 4s 4.0A ee Pelee Width = 10 104 __ If you need this device in the SOT package, an electical equivalent is available. See FDSO1500 family. ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) VE Forward Voltage 1N456A/7A/8A/9A 1.0 v Ip = 100 mA . 1N456 1.0 v ip = 40 mA 1N457 1.0 Vv | ips 20ma 1N458 1.0 v IF =7mA 1N459 1.0 vs ip=3ma i Ir Reverse Current VR = Rated WIV VR = Rated WIV, Ta = 150°C BV Breakdown Voltage 1N466/A 30 v In = 100 nA 1N457/4 70 v | ig= 100 pA . 1N458/A 150 v IR = 100 nA 1N459/A 200 v tg = 100 pA © | Gapactence es tne aioe ae tinng values above which he sencesbhy tthe side maybe impaied.

2 Theve oo tleacy sate lnt-he acto shoud be cone on eppctonsveving ule ox low ype operation,

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_ FAIRCHILD SEMICONDUCTOR ay DE S4b9b74 OO27475 2 I . t 3469674 FAIRCHILD SEMICONDUCTOR 84D 27475 Di | : Dn | A/ ———e PDLL461A/4624/4630 SE A Schlumberger Company " General Purpose High Conductance Diodes Jo 04 : © Vp... 1.0 V (MAX) @ 100 mA PACKAGES * Ip. -500 nA (MAX) @ WIV 1N461A 0-35 1N462A 00-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 1N463A DO-35 Temperatures FOLL461A Lu-34 Storage Temperature Range. “65°C to+200°¢ = FDLL462A LL34 Maximum Junction Operating Temperature +176°C FDLL463A LL-34 Lead Temperature +260°C i Power Disst; If you need this device in the ipation (Note 2) a ' Maximum Total Power Dissipation at 25°C Ambient 500mw SOT package, an electical a Linear Power Derating Factor (from 25°C) 3.33 mW/°C equivalent is available. See cai FDSO1600 family. Maximum Voltage and Currents IN461A IN462A IN463A IN464A wiv Working Inverse Voltage 265V 60V 175V 125V lo Average Rectified Current 200 mA 200mA 200mA 200 mA IF Continuous Forward Current 500 mA 500 mA 600mA 600 mA if Peak Repetitive Forward Current 600 mA 600 mA 600 mA 600 mA it(gurge) Peak Forward Surge Current Pulse Width = 18 1.0A 1.0A 1.0A 1.0A . Pulse Width = 1 us 400A 4.0A 4.0A 4.0A | i ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) | IR Reverse Current 600 nA | VR = Rated WIV

30 HA | Vp = Rated WIV, Ta = 150°C

BV Breakdown Voltage IN461A 30 v In = 100 pA IN462A 70 Vv | Ip = 1004A | IN463A 200 Vs | Ip = 100 nA IN464A 160 v Ip = 100 pA ores: ! 1. These ratings sr ining values above wich the servicebily ofthe diode may be inpared. 2 Those are seady slate ln, Th factor shoud be sonelad on eppcalion volng pulsed or low dtycyele operation.

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27476 Om

——s 1N482B/483B/484B/485B EERE — FDLL482B/483B/484B/485B General Purpose Low iodes Leakage Diod 7-01 -04 ; © IR, .:25 9A (MAX) @ WIV 1N482B DO-35 | 1N4838 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 1N484B DO-35 Temperatures 1N485B DO-35 Storage Temperature Range 66°C to +200°C. Maximum Junction Operating Temperature +175°C tapes tte Lead Temperature (from 25°C) $280°C OT aeaB iss Power Dissipation (Note 2) FDLL4858 LL-34 Maximum Total Power Dissipation at 26°C Ambient 500 mw Linear Power Derating Factor (from 25°C) 3.83mW/°C If you need this device in the Maximum Voltage and Currents ‘1N482B IN4B3B IN4a4B IN4aSB IN4a6n SOT package, an electical WIV Working Inverse Voltage 38V 70V 130V 180V 226v equivalent is available. See lo Average Rectified Current 200mA = FDSO1500 family. iF Continuous Forward Current ‘500 mA it Peak Repetitive Forward : Current 600 mA it(surge) Peak Forward Surge Current Pulse Width = 15 1.0 Pulse Width = 1 us 40 ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) In Reverse Current 1N482B —1N485B 25 Vr = Rated WIV

6.0 Vp = Rated WIV, Ta = 150°C

1N486B 50 Vp = 226V : 10 Vp = 225 V, Ta = 160°C BV Breakdown Voltage 1N482B 40 v IR = 100 pA 4N4838 80 V_ | ip = 100nA 1N484B 160 Vv | IR= 100nA 1N485B 200 Vv tR = 100 nA 1N486B 260 V__| in = 100 ua ores: {+ These ratings are lnlingvales above whch the serviceabity ofthe diode may be Impated 2, Thane are stendy tale fe. The factory shoud be conauted on appielionsInvlvingpuled of low dy-cyete operation, 8: For product fanlycharectratle curves, alr to Chapt 4.02 CRN 3-196 . , - - $

Product Information

PN5136 specifications and overview.

Summary

NPN Small Signal General Purpose Amplifiers

Description

NPN Small Signal General Purpose Amplifiers

Source title PN5136 Datasheet(PDF) - Fairchild Semiconductor

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