PN5134 FAIRCHILD | Alldatasheet
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Discrete POWER & Signal Technologies PNP General Purpose Amplifier PN5134 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 10 V VCBO Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 3.5 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN5134 PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92 1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 01 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.5 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10 µ A2 0 V ICBO Collector Cutoff Current VCB = 15 V, IE = 0, TA = 65 °C 10 µ A ICES Collector Cutoff Current V CE = 15 V, IC = 0 0.4 µ A ON CHARACTERISTICS* hFE DC Current Gain V CE = 1.0 V, IC = 10 mA VCE = 0.4 V, IC = 30 mA 150 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 3.3 mA 0.25 0.20 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 3.3 mA 0.70 0.72 0.9 1.1 V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 5.0 V, f = 1.0 MHz 4.0 pF hfe Small-Signal Current Gain I C = 10 mA, VCE = 10 V, f = 100 MHz 2.5 SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% ts Storage Time I C = IB1 = IB2 = 10 mA 18 ns ton Turn-on Time V CC = 3.0 V, IC = 10 mA, 18 ns td Delay Time I B1 = 3.3 mA 14 ns tr Rise Time 12 ns toff Turn-off Time V CC = 3.0V, IC = 10 mA 18 ns ts Storage Time I B1 = IB2 = 3.3 mA 13 ns tf Fall Time 13 ns