PN4355 FAIRCHILD | Alldatasheet
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Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. PN4355 C B E TO-92 MMBT4355 C B E SOT-23 Mark: 81 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN4355 *MMBT4355 PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Discrete POWER & Signal Technologies 1997 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units PNP General Purpose Amplifier (continued) OFF CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS ON CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current V CB = 50 V, IE = 0 50 nA IEBO Emitter-Cutoff Current V EB = 5.0 V, VCE = 0 VEB = 4.0 V, IC = 0 100 µA nA Cobo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 30 pF Cibo Input Capacitance V EB = 0.5 V, IC = 0, f = 1.0 MHz 110 pF hfe Small-Signal Current Gain I C = 50 mA, VCE = 10 V, f = 100 MHz 1.0 5.0 NF Noise Figure IC = 100 µA, VCE = 10 V, R S = 1.0 kΩ , f = 1.0 kHz, BW = 1.0 Hz 1.0 3.0 dB SWITCHING CHARACTERISTICS ton Turn-On Time I C = 500 mA, VCC = 500 mA 100 ns toff Turn-Off Time I B1 = IB2 = 50 mA 400 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% hFE DC Current Gain IC = 100 µA, VCE = 10 V IC = 1.0mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 100 mA, VCE = 10 V IC = 500 mA, VCE = 10 V 100 400 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1.0 A, IB = 100 mA 0.15 0.50 1.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1.0 A, IB = 100 mA 0.9 1.1 1.2 V V V VBE(on) Base-Emitter On Voltage I C = 500 mA, VCE = 0.5 V IC = 1.0 A, VCE = 1.0 V 1.1 1.2 V V