PN4275

PN4275 FAIRCHILD | Alldatasheet

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Discrete POWER & Signal Technologies NPN Switching Transistor PN4275 This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN4275 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W C B E TO-92  1997 Fairchild Semiconductor Corporation

(continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 01 5V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 4.5 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10 µ A, IB = 0 40 V IB Base Cutoff Current V CE = 20 V 0.4 µ A ICBO Collector Cutoff Current V CB = 20 V, IE = 0, TA = 65 °C 10 µ A ON CHARACTERISTICS* SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 5.0 V, f = 1.0 MHz 4.0 pF hfe Small-Signal Current Gain I C = 10 mA, VCE = 10 V, f = 100 MHz 4.0 SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% ton Turn-on Time V CC = 3.0 V, IC = 10 mA, 12 ns td Delay Time I B1 = 3.3 mA, 9.0 ns tr Rise Time VBE (off) = -3.0 V 7.0 ns toff Turn-off Time V CC = 3.0 V, IC = 10 mA 12 ns ts Storage Time I B1 = IB2 = 3.3 mA 8.0 ns tf Fall Time VBE (off) = -3.0 V 8.0 ns ts Storage Time I C = IB1 = IB2 = 10 mA 13 ns hFE DC Current Gain I C = 10 mA, VCE = 1.0 V IC = 30 mA, VCE = 0.4 V IC = 100 mA, VCE = 1.0 V 120 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 30 mA, IB = 3.0 mA IC = 10 mA, IB = 3.3 mA IC = 100 mA, IB = 10 mA IC = 10 mA, IB = 1.0 mA, TA = 65 °C 0.20 0.25 0.18 0.50 0.30 V V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 30 mA, IB = 3.0 mA IC = 10 mA, IB = 3.3 mA IC = 100 mA, IB = 10 mA 0.72 0.74 0.85 1.15 1.0 1.6 V V V V