PN4258

PN4258_02 FAIRCHILD | Alldatasheet

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©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4258 Absolute Maximum Ratings* TA=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -12 V VCBO Collector-Base Voltage -12 V VEBO Emitter-Base Voltage -4.5 V IC Collector Current - Continuous -200 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CES Collector-Emitter Breakdown Voltage * I C = -100µA, VBE = 0 -12 V VCEO(SUS) Collector-Emitter Sustaining Voltage * I C =- 3.0mA, IB = 0 -12 V V(BR)CBO Collector-Base Breakdown Voltage I C = -100µA, IE = 0 -12 V V(BR)EBO Emitter-Base Breakdown Voltage I E = -100µA, IC = 0 -4.5 V ICES Collector Cutoff Current V CE = -6.0V, VBE = 0 VCE = -6.0V, VBE = 0, TA = 65°C -0.01 -5.0 µA µA On Characteristics hFE DC Current Gain I C = -1.0mA, VCE = -0.5V IC = -10mA, VCE = -3.0V IC = -50mA, VCE = -1.0V 120 VCE(sat) Collector-Emitter Saturation Voltage I C = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA -0.15 -0.5 V V VBE(sat) Base-Emitter Saturation Voltage I C = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA -0.75 -0.95 -1.5 V V Small Signal Characteristics fT Current Gain Bandwidth Product I C = -10mA, VCE = -5.0V, f = 100MHz IC = -10mA, VCE = -10V, f = 100MHz 700 700 MHz MHz Ciob Input Capacitance V BE = -0.5V, IC = 0, f = 1.0MHz 3.5 pF Ccb Collector-Base Capacitance V BE = -5.0V, IE = 0, f = 1.0MHz 3.0 pF PN4258 PNP Switching Transistor

• This device is designed for very high speed saturated switching at collector currents to 100mA.
• Sourced from process 65. 1. Emitter 2. Base 3. Collector TO-921

©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4258 Electrical Characteristics TA=25°C unless otherwise noted (Continued) * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Switching Characteristics ton Turn-on Time V CC = -1.5V, VBE(off) = 0V IC = -10mA, IB1 = -1.0mA 15 ns td Delay Time 10 ns tr Rise Time 15 ns toff Turn-off Time V CC = -1.5V, IC = -10mA, IB1 = IB2 = -10mA 20 ns ts Storage Time 20 ns tf Fall Time 10 ns ts Storage Time I C = -10mA, IB1 = IB2 = -10mA 20 ns Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W

Figure 7. Input/Output Capacitance Figure 8. Contours of Constant Gain Figure 9. Switching Times Figure 10. Switching Times Figure 11. Delay Time vs Turn On Base Figure 12. Rise Time vs Collector and

200 MHz 500 MHz 900 MHz

1500 MHz

1200 MHz

200 MHz

600 MHz

Figure 1. ton, toff Test Circuit

2.2 KΩΩΩΩΩ 130 ΩΩΩΩΩ

5.0 KΩΩΩΩΩ

©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 0.46 ±0.10 1.27TYP (R2.29) 3.86MAX [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 3.60 ±0.20 14.47 ±0.40 1.02 ±0.10 (0.25) 4.58 ±0.20 4.58+0.25 –0.15 0.38+0.10 –0.05 0.38+0.10 –0.05 TO-92

©2002 Fairchild Semiconductor Corporation Rev. I1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FACT™ FACT Quiet series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™