PN4249 | DigiCamel IC Datasheet

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. . FAIRCHILD SEMICONDUCTOR 84 DER 3469674 0027438 7 r

3469674 FAIRCHILD SEMICONDUCTOR 840 27438 DQ :

aN PN4249/FTSO4249 J- 25-2% ‘A Schlumberger Company PN4250/ FTSO4250 ! PN4250A/FTSO4250A PNP Low Level Low Noise Amplifiers i © Veco -.. 40 V (Min) (PN4248/50); 60 V (Min) (PN4249/50A) PACKAGE © fre -.. 250-700 @ 100 uA (PN4250/50A) PN4248 70-92 © Excellent Beta Linearity from 1.0 uA to 50 mA PN4250 0-02 PN4250A TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO4248 TO-236AA/AB FTS04249 TO-236AA/AB Temperatures FTSO4250 TO-236AA/AB ' Storage Temperature -55° C to 160°C FTSO4250A TO-236AA/AB ! Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) ‘Total Dissipation at PN _-FTSO 25°C Ambient Temperature 0.625W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents 4248/50 4249/50A Veeo Collector to Emitter Voltage -40V -60V (Note 4) Veso Collector to Base Voltage -40v -60V Vees Collector to Emitter Voltage -40V -60V Veeo Emitter to Base Voltage 50V -8.0V ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) : 4248 4249 : SYMBOL | CHARACTERISTIC MIN. MAX| MIN. MAX | UNITS| TEST CONDITIONS . BVces | Collector to Emitter Breakdown 60 V_ [le=10yA, lc =0 i Voltage BVceo | Collector to Base Breakdown 60 V_ |le=104A, le=0 Voltage BVeoo | Emitter to Base Breakdown | -8.0 6.0 V_ [le=10nA, lo =0 Voltage . eso Emitter Cutoff Current [ [20 |_| 20 | nA_|Veo=-3.0V, b= 0 leno Collector Cutoff Current 40 | nA |Vce=—40V, le =0 3.0 | wA_| Vea =-40V, te =0, Ta =65°C Tre DC Current Gain 50 100 le = 100 A, Vee = -5.0V 50 100 lg = 1.0 mA, Vee = -6.0V Tre DC Pulse Current Gain Te =10 MA, Vee = -5.0V (Note 5) NOTES: ao ee ratings ere imiing values above which the serviceability of any individual semiconductor device may be Impaled. ! J Tees ste Soauy sate mite, The factory should be Consulted on applications involving pulsed or low duty eyele operations, ; Bees: arvince one a maximum junction temperature of 180" C and (TO-82) juntion-to-cse thermal resistance of 125" C/W (deratng factor of 80 Tha Oh auctor to-ambiont tonal resistance of 200° COW (erating factor of 0 mW C); (TO-286) juncion-to-amblent thermal resistance of 387° GAW (deratng factor of 28 miW*C) 4. Rating refrs to a high current point where collector to emitter voltage is lowest 6. Pulse condifons: length = 200 ya; duly cycle = 1%, & For product femily characteristic curves, rter to Gurve Set T218, Package mounted on 99.5% alumina & mm x 8 mm x 0 mm Sc EERE 3-158

_ FAIRCHILD SEMICONDUCTOR 84 DE Bs46%e74 0027439 49 I

3469674 FAIRCHILD SEMICONDUCTOR 84D 27439 D

PN4248/FTSO4248/PN4249/FTSO4249 PN4250/FTSO4250 PN4250A/FTSO4250A J. 99 94 i a . ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) 4248 4249 SYMBOL | CHARACTERISTIC MIN. MAX| MIN. MAX |UNITS| _ TEST CONDITIONS. Veeown | Collector to Emitter Sustaining |-40 60 V__|le=5.0 mA (pulsed), ls = 0 Voltage (Note 5) Veewan | Collector to Emitter Saturation 0.25 025 | V_ | lc=10mA, ls=0.5 mA Voltage (Note 5) Vecwsn | Base to Emitter Saturation 09 —09 | V_ |ic=10mA, lb=05 mA ey Voltage (Note 5) 3, Cow Output Capacitance rf eol| [60 | pF _| Veo=-5.0V,le=0,=1.0MH2 Cw Input Capacitance | [te] | 16 | pF | Vee=-05V, lo=0,f=1,0MH2 Tie High Frequency Current Gain Ie = 0.5 MA, Vee = 6.0 V, f = 20 MHz Pre Small Signal Current Gain Te = 1.0 mA, Vee = -5.0V, f= 1.0 kHz The Input Resistance 7 Te = 1.0 mA, Voe = 5.0 V, f= 1.0 kHz Noo Output Conductance pmhos | lc = 1.0 mA, Vee = 6.0 V, f= 1,0 kHz Te Voltage Feedback Ratio Ie = 1.0 MA, Vee = 5.0 V, . f= 1.0 kHz NF Wide Band Noise Figure Te = 20 pA, Vee = -5.0V, f=10Hzto 10kHz, Re=10k0 PBW = 15.7 kHz NF Narrow Band Noise Figure dB | tc =20 pA, Vee = -5.0V, f= 1.0 kHz, Re = 10 ka PBW = 150 Hz dB | Ic = 250 wA, Voe = -5.0 V, f= 1.0 kHz, Rs = 1.0.0 PBW = 150 Hz 3-159

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27440 Dm

PN4248/FTSO4248/PN4249/FTSO4249 : PN4250/FTSO4250 PN4250A/FTSO4250A 7. 29.23 . ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) 4250 4250A SYMBOL | CHARACTERISTIC MIN MAX| MIN MAX |UNITS| TEST CONDITIONS Veeous | Collector to Emitter Sustaining | -40 60 V_ [ic =5.0 mA (pulsed), lp = 0 Voltage (Note 5) Veewsn | Collector to Emitter Saturation 0.25 025 | V |ic=10mA, e=05mA Voltage (Note 5) Vesa | Base to Emitter Saturation 09 Vv [ic=10 mA, b=0.5 mA Voltage (Note 5) Con Output Capacitance [feo] [60 | pF | Vca=-5.0V, le=0,1=1.0MHz Co Input Capacitance [| te] | pF | Vee =-0.5V, lo =0,f=1.0MHz hie High Frequency Current Gain lo = 0.5 mA, Vee = -5.0 V, t= 20 MHz Hie ‘Small Signal Current Gain 800 800 Ie = 1.0 MA, Vee = 5.0 V, f= 1.0 kHz hie Input Resistance Ic = 1.0 MA, Vee = -5.0 V, f= 1.0 kHz hoe (Output Conductance umhos | Io = 1.0 mA, Vee = -5.0V, f= 1.0 kHz He Voltage Feedback Ratio 10 | x10" |i, = 1.0 mA, Vee = 6.0 V, f= 1.0 kHz NF Wide Band Noise Figure 20 Io = 20 uA, Vee = -5.0 V, £=10Hzto 10kHz, Re = 10k0. PAW = 15.7 kHz NF Narrow Band Noise Figure dB |e =20 A, Vee = -5.0V, f= 1.0 kHz, Rs = 10k PBW = 150 Hz GB | lo = 250 uA, Ver = 5.0 V, 1 = 1.0 kHz, Rs = 1.0 k0 PBW = 150 Hz BVces__| Collector to Emitter Breakdown| -60 V_ | te=10 HA, le =0 Voltage BVceo | Collector to Base Breakdown ~60 V_ [tc=10 nA, le =0 Voltage BVevo Emitter to Base Breakdown 5.0 -6.0 Vv le = 10 pA, le =O Voltage leao Emitter Cutoff Current | [=i fe im | Ves = -3.0V, le =0 eso Collector Cutoff Current 10 nA | Vee =~40V, le =0 nA | Vea =-50V, le = 0

3.0 HA_| Veo = ~40V, le=0, Ta = 65°C

hee DC Current Gain 700 700 le = 100 WA, Vee = 5.0 V Io = 1.0 MA, Vee = ~5.0 V hee DC Pulse Current Gain (Note 5)| 250 | | | | lo = 10 mA, Vee = -5.0V PE 3-160

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27441 ow

. ——s PN4258/FTSO4258 . . ———— — PNP Small Signal Ultra High Speed Logic Switch ee . © Vero «.. 12 V (Min) PACKAGE © fre ... 30-120 @ 10 mA PN4258 T0-92 . © boa... 15s (Max) @ 10 mA FTSO4258 TO-236AA/AB © Complement ... 2N/FTSO5769 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Température -55°C to 150°C Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) : : Total Dissipation at PN FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Veco Collector to Emitter Voltage 12V (Note 4) Veeo Collector to Base Voltage 2V Veso Emitter to Base Voltage ~45V le Collector Current 50 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) ‘SYMBOL | CHARACTERISTIC [Min [MAX | UNITS: TEST CONDITIONS BVeso | Collector to Base Breakdown Voltage |—12 | | _V__|lc= 100A, le=0 BVeso. | Emitter to Base Breakdown Voltage [45 | | V_ | le=100HA, lo=0 BVces | Collector to Emitter Breakdown Voltage] 12 | | V__| lc = 100 pA, Voe=0 lees Collector Reverse Current 10. | nA |Vce=—6.0V, Vee=0 : 6.0 | pA _|Vce=-6.0V, Vee = 0, Ta= 65°C hve | DC Current Gain (Note 5) 30 | 120 Ie = 10 mA, Vee = -3.0V . 15 Io = 1.0 MA, Vee =-0.5V 30 Ig = 50 MA, Vee = -1.0 V NOTES: {These ratings are limiting values above which the serviceability of any Individual somiconductor device may be impaired. 2. These ore sleady slate mits. The factory should be consulted on applications involving pulsed or low duty cycle operations 3. These range give a maximum junction temperature of 150° Cand (TO-®2)junclion-to-case thermal resisiance of 125° CW (derating factor of 8.0 MW/"Cy; junction-to-ambient thermal resistance of 200" CIW (dorating factor of 60 mW/* C}; (TO-286) junction-to-ambient thermal resistance of - 357° GAY (derating factor of 28 mW/" ©). 4. ating refers toa high current point where collector to emitter voltage Is lowest 5. Pulse conditions: length = 200 ys; duty cycle = 1%. 8. For product family characteristic curves, refer to Curve Set T292. +" Package mounted on 99.5% alumina 8 mm x 8 mm x 06 mm. el To 3-161

FAIRCHILD SEMICONDUCTOR — 64 DE fP34b9b74 ooary4ye a T PN4258/FTSO4258 7245 _/<— ee ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC | Min [MAX [UNITS TEST CONDITIONS Vesa | Collector to Emitter Saturation Voltage -015 | V [tc=10mA, lb=1.0mA (Note 5) -05 | V_|ic=50mA, lp =5.0mA Veeowus | Collector to Emitter Sustaining Voltage V [te=30mA, b=0 (Notes 4 & 5) Voswav | Base to Emitter Saturation Voltage |-0.75 |-0.95 | V | Ic=10mA,e=10mA (Note 5) -1.5 | V_[lc=50mA,le=5.0mA Con Collector to Base Capacitance [ [30 [| pF | Va=-5.0V, 1 =0 . [hel Magnitude of Small Signal Current Gain! 7.0 te= 10 MA, Voe=—10V, f= 100 MHz 5.0 lo= 10mA, Vee =-5.0V, f= 100 MHz . ten Turn On Time (test circuitno. 348) | | 15 ns | lo~ 10 mA, ln ~ 1.0 mA ten Turn Off Time (test circuit no. 348) || 20 | as | lo~10mA, lor Ion ~1.0mA %. Charge Storage Time le = 10 MA, lor ~ lee ~ 10 mA (test circuit no. 234)

FAIRCHILD SEMICONDUCTOR ay DE pauenees uue?44s U | Dn T3909 — PN4274/FTSO4274 Dl A Schlumberger Company PN4275/FTSO4275 NPN Small Signal High Speed Saturated Switches (PN/FTSO4275) PN4274 TO-92 © Veen ... 0.2 V (Max) @ 10 mA PN4275 TO-92 © fr... 400 MHz (Min) FTSO4274 TO-236AA/AB © 1%... 13ms (Max) @ 10mA © ton and toff ... 12ns (Max) @ 10 mA © Complement ... PN3640 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55°C to 150°C . Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents 4274 4275 Veco Collector to Emitter Voltage 12V 15V (Note 4) Veo Collector to Base Voltage 30V 40V Vces Collector to Emitter Voltage 30V 40V Veso Emitter to Base Voltage 45V 45V lo Collector Current (10 us pulse) 500 mA 500 mA i Collector Current 100 mA 100 mA ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) i H 4274 4275 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS. TEST CONDITIONS BVces Collector to Emitter Breakdown v Ic = 10 pA, Vez = 0 Voltage BVceo | Collector to Base Breakdown V | tc=10 nA, ke =0 Voltage H BVewo Emitter to Base Breakdown Vv le = 10 pA, lo =O Voltage NOTES: ‘ 1. Those ratings are limiting values above which the sericeabilly of any individual semiconductor device may be Impaired. 2. These are steady slate limits. The factory should be consulted on applications Involving pulsed or low duty cycle operations 3. These ratings give @ maximum junction temperature of 150° C and (70-82) junction-to-case thermal resistance of 125°CAW (derating factor of 8 mW?) junction-to-ambient thermal resistance of 200" CW (deraling factor of 6.0 mW* C); (TO-286)junction-to-ambient thermal resistance ot 387° C/W (derating factor of 28 mW/*C), 4. Rating refers toa high current point where collector to emitter voltage is lowest 5. Pulse conditions: length = 300 ys: duly oycle = 18 6. For product family characteristic curves, reler 10 Gurve Set T162. Package mounted on 98.5% alumina 8 mm x 8 mm x 0.6 mm. SSS 3-163

FAIRCHILD SEMICONDUCTOR ay DE i] BYbIb74 DO27444 2 I : PN4274/FTSO4274 TAS-IS j PN4275/FTSO4275_ | ~35~-I SSS : ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) 4274 4275 SYMBOL| CHARACTERISTIC MIN MAX| MIN Max | UNITS] TEST CONDITIONS Ieao Collector Cutoff Current | [to | 0 [uA | Ven = 20V, te =0, Tr = 65°C lees Collector Reverse Current |_| 400 |_| 400_| nA _| Vee =20V, Vor =0 bre DC Pulse Current Gain le = 10 MA, Vee = 1.0 V Ic =30 mA, Vor = 0.4 V | le = 100 MA, Vee = 1.0 V Veeows | Collector to Emitter Sustaining V_ | le =10mA (pulsed), a =0 ; Voltage (Note 5) . Veewan | Collector to Emitter Saturation 0.20 020 | V [ic=40mA, lp =1.0mA Voltage (Note 5) 0.18 018 | V | lo=10mA\\ lb =3.3 mA 025 0.25 | V_ | te=30mA, le=3.0 mA 050 050 | V_ | tc¢=100mA, le=10mA 030 030 | V | lo=10mA, lo= 1.0 mA, Ta = 65°C : Vesa | Base to Emitter Saturation | 0.72 | 0.85] 0.72] 085 | V |io=10mA W=1.0mA Voltage (Note 5) 0.74 | 1.00! 0.74] 74.00 | V_ |le=10mA, le=33 mA : Con Collector to Base Capacitance| | 40] | 40 | pF |Va=50V.k=0 Pie High Frequency Current Gain | 4.0 lo=10MA, Voe = 10V, f= 100 MHz Te. Charge Storage Time Constant 8 le = ler = —lez = 10 mA, (test circuit no. 3111) ton Turn On Time 12 12 lo = 10 MA, Io = 3.3 mA (test circuit no. 361) ton Turn Off Time 12 | ons | te=10mA, te: =lo2=3.3 mA (test circuit no. 381) SSS 3-164

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27445) Do

— ; PN4354/FTSO4354_7~27-23 = PN4355/MPS4355/FTSO4355 ‘chlumberger PN4356/MPS4356/FTS04356 i PNP General Purpose Amplifiers ‘ | . © Veco ... -60 V (Min) (PN4354, PN/MPS4355), PACKAGE | -80 V (Min) (PN/MPS4356) PN4354 0-92 : © Complements ... PN3567, PN3569 MPS4355 T0-92 MPS4356 T0-92 ABSOLUTE MAXIMUM RATINGS (Note 1) FTS04354 TO-236AA/AB FTSO4355, TO-236AA/AB Temperatures FTSO4356 TO-236AA/AB Storage Temperature -58° C to 150°C Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN/MPS FTSO : 25°C Ambient Temperature 0.625W 0.350 W* 25°C Case Temperature 1.0 W Voltages & Currents 4354/5 4356 Veco Collector to Emitter Voltage -60V -80V (Note 4) Veso Collector to Base Voltage -60V -80V Veo Emitter to Base Voltage 5.0V -5.0V le Collector Current 500mA 500 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) | 4354 4355 ; SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX _| UNITS | TEST CONDITIONS BVceo | Collector to Base Breakdown | -60 60 V [ic=10uA, le =0 Voltage BVeso Emitter to Base Breakdown 5.0 6.0 v le = 10 pA, Ic =0 Voltage les Emitter Cutoff Current | [aol [too [ nA | Vee=-4.0V, lo =0 leso Collector Cutoff Current nA | Vep = 80 V, le =0 y BA Vee = —50 V, le = 0, Ta= 75°C bre DC Pulse Current Gain (Note 5) | 25 60 le = 100 WA, Vee = 10 V 40 75 lo = 1.0 MA, Voe = ~10 V 50 100 lo = 10 MA, Vee = ~10 V 40 75 lo = 100 mA, Vee = “10 V 30 5 le = 500 MA, Vee = —10V Notes: 4. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give @ maximum junction tomporature of 150° C and (T.0-92) junction-to-case thermal resistance of 125° CAW (derating factor of 80 ‘mW C); junction-to-ambient thermal resistance of 200° C/W (derating factor of 6.0 mWW/*C); (TO-236) junction-to-ambient thermal rasistance of 357° CW (derating factor of 28 mW/*C), 4. Rating refers to @ high current point where collector fo emitter voltage is lowest 5. Pulse conditions: length = 200 ys duty cycle = 135. 6. For product family characteristic curves, reter to Curve Set T224, +" Package mounted on $9.58 alumina 8 mm x 8 mm x 0.6 mm A 3-165

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27446 Oe

. FAIRCHILD SEMICONDUCTOR SY DE 3465674 ooz2H4? 3 | PN4354/FTSO4354J~ 2%. a4 PN4355/MPS4355/FTSO4355 PN4356/MPS4356/FTSO4356 . - . | ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) : 4356 : SYMBOL| CHARACTERISTIC MIN MAX_| UNITS. TEST CONDITIONS Veeomm | Collector to Emitter Sustaining V_ | te = 10 mA (pulsed), la = 0 ' Voltage (Note 5) Veewsn | Collector to Emitter Saturation 015 | Vv [1c =150 mA, lo= 15 mA Voltage (Note 5) =05 | V__|le=500mA, In =50 mA Vee | Base to Emitter “On” Voltage —1t | V~ [le =500 mA, Vee =—0.5 V (Note 3) ee Veewan | Base to Emitter Saturation 09 | V |ic=150mA b= 15V Voltage (Note 5) It | V__| te =500 mA, Ip = 500 mA Con Collector to Base Capacitance | [30] pF [Vos =~10V, = 0,1 = 1.0 MHz Co Emitter to Base Capacitance [ [110 [pF | Ver =-0.5V, lo = 0, 1= 1.0 MHz Tel Magnitude of Common Emitter lc =50 MA, Vee =—10V, ‘Small Signal Current Gain f= 100 MHz ten Turn On Time 100 lo = 500 MA, I: ~ 50 mA, (test circuit no. 341) Voc = ~30 V teu Turn Off Time lo~ 500 MA, lox ~ luz = 50 mA, (test circuit no. 341) Vec = -30 V NF Noise Figure 3.0 | 4B | l= 100A, Vor =-10V, £= 1.0 kHz, BW = 1.0 Hz, Rs = 1.0 ko 3-167 i

FAIRCHILD SEMICONDUCTOR 4 DE 3469674 ooez44a oO E

3469674 FAIRCHILD SEMICONDUCTOR 84D 27448 =D a

A Schlumberger Company . . PNP Low Noise High Voltage Amplifiers Tt 40. © Veco ... 150 V (Min) PACKAGE | . © Ire ... 80-300 @ 10 mA (PN/FTSO4889) PN4888, TO-92 © Cop... 4.0 pF (Max) PN4889 TO-92 * Excellent Beta Linearity from 10 nA to 50 mA FTSO4889 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures | Storage Temperature -55°C to 150°C. i Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage 150 V (Note 4) Veso Collector to Base Voltage 150 V Veso Emitter to Base Voltage -6.0V Io Collector Current 100 mA | ELECTRICAL CHARACTERISTICS (25°C Ambient ‘Temperature unless otherwise noted) (Note 6) 4888 4889 SYMBOL | CHARACTERISTIC MIN MAX [MIN MAX | UNITS TEST CONDITIONS : BVces Collector to Emitter Breakdown v Io = 100 pA, Is = 01 . Voltage BVcso Collector to Base Breakdown |-150 Vv Ic = 100 pA, le =0 Voltage BVeso Emitter to Base Breakdown 0.6 v le =10 pA, le =0 Voltage leoo Emitter Cutoff Current | [so | [10 | nA |Ve=-40V, b=0 teso Collector Cutoff Current nA Ves = -100 V, le =O BA Vos =—100V, le =0, Ta =65°C NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2, Those are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle eperetions 3. These ratings give a maximum junction temperature of 150°C ard (TO-82) junction-to-ease thermal resistance of 125" GW (derating factor of 8 mW? Cr}: junction-to-ambient thermal resistance of 200" C/W (derating tector of 6.0 mW/* Cl: (TO-236)junction-to-ambient Urormas eciseree ot 357° CW (derating factor of 28 mW/C). 4. Rating reters toa high current point where collector to emitter voltage is lowest 5. Pulse conditions: longth = 300 ys: duty eycle = 1% 6. For product tamly characteristic curves, reler to Curve Set T232 * Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. es NECN 3-168

. ~ FAIRCHILD SEMICONDUCTOR 64 DEM 3469674 0027449 1 I PN4888/FTSO4888 . PN4g89/FTSO4a89 T-A4. 2% . ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) . : 4888 4889 SYMBOL] CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS : bre DC Pulse Current Gain (Note 5) 60 Ic = 100 pA, Vee = —10V ' ! 70 lo = 1.0 mA, Voe =-10V t

80 Ic = 10 MA, Vee = 10 V

Veeoieus) | Collector to Emitter Sustaining | -150 Vv lc = 2.0 mA, ls = 0 Voltage * Veetsa Collector to Emitter Saturation 05 0.5 Vv Io = 10 mA, Is = 1.0 MA Voltage (Pulsed) (Note 5) Veeiont Base to Emitter “On” 0.8 -0.7 Vv Io = 1.0 MA, Vee = -10V Voltage (Pulsed) (Note 5) Veetsa Base to Emitter Saturation 0.9 0.9 v lc = 10 MA, Ip = 1.0 mA Voltage (Pulsed) (Note 5) Con Output Capacitance | [40 [ [40 | pF | Vcs=-20V, le=0,1=1.0MHz Cw Input Capacitance | [30 [fas [pF | Vee =-05V, lo =0,f=1.0MHz He High Frequency Current Gain Ic = 1.0 mA, Vee =-10 V, f = 20 MHz Hie Common Emmitter Small Signal Ic = 1.0 MA, Vee = -10 V, Current Gain Forward Current! f= 1.0 kHz Transfer Ratio Nie Small Signa! Short Circuit 0.75 17 12 ko Ic = 1.0 MA, Vor = -10 V, Input Resistance f = 1.0 kHz Hoo Small Signal Open Circuit 14 umhos | Ic = 1.0 MA, Voce = -10 V, Output Conductance f= 1.0 kHz He Small Signal Open Circuit x10“ | Ic = 1.0 mA, Vee = 10 V, Reverse Voltage Feedback f= 1.0 kHz Ratio NF Wide Band Noise Figure Io = 250 pA, Vee = -5.0 V, f=10Hz to 10kHz, Rs =1.0k, BW = 15.7 kHz NF Narrow Band Noise Figure 10 dB Ic = 250 pA, Vee = -5.0 V, Rs = 1.0 kf, f = 100 Hz, BW = 15 Hz 3.0 dB Ic = 30 pA, Vee = -5.0 V, Rs = 1.0 kQ, f = 1.0 kHz, BW = 150 Hz 3.0 6B Ic = 250 pA, Vee = -5.0 V, Rs = 1.0 k0, f = 10 kHz, BW = 1.5 kHz 4.0 dB Ic = 1.0 mA, Vee = ~10 V, t Rs = 1.0 kf, f = 1.0 MHz, BW = 2.0 kHz re 3-169

Product Information

PN4249 specifications and overview.

Summary

PNP Low Level Low Noise Amplifiers

Description

PNP Low Level Low Noise Amplifiers

Source title PN4249 Datasheet(PDF) - Fairchild Semiconductor

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