PN4143

PN4143 FAIRCHILD | Alldatasheet

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Discrete POWER & Signal Technologies PNP General Purpose Amplifier PN4143 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN4143 PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92  1997 Fairchild Semiconductor Corporation

PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 04 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICEX Collector Cutoff Current V CE = 30 V, VOB = 0.5 V 50 nA IBL Base Cutoff Current V CE = 30 V, VOB = 0.5 V 50 nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 100 µ A VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA VCE = 1.0 V, IC = 150 mA 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.4 1.6 V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1.3 2.6 V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 10 V, f = 100 kHz 8.0 pF Cib Input Capacitance V EB = 2.0 V, f = 100 kHz 30 pF hfe Small-Signal Current Gain I C = 50 mA, VCE = 20 V, f = 100 MHz 2.0 SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% ton Turn-on Time V CC = 30 V, IC = 150 mA, 45 ns td Delay Time I B1 = 15 mA 10 ns tr Rise Time 40 ns toff Turn-off Time V CC = 30 V, IC = 150 mA 100 ns ts Storage Time I B1 = IB2 = 15 mA 80 ns tf Fall Time 30 ns