PN4122

PN4122 FAIRCHILD | Alldatasheet

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Discrete POWER & Signal Technologies PNP General Purpose Amplifier PN4122 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN4122 PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92  1997 Fairchild Semiconductor Corporation

PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 04 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10 µ A4 0 n A IB Base Cutoff Current V CE = 30 V 25 nA ICES Collector Cutoff Current V CE = 30 V VCE = 30 V, TA = 65 °C nA µ A ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 100 µ A VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 50 mA 100 150 150 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.13 0.14 0.30 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.70 0.75 0.90 1.10 V V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 10 V, f = 1.0 MHz 4.5 pF Cib Input Capacitance V EB = 0.5 V, f = 1.0 MHz 8.0 pF hfe Small-Signal Current Gain I C = 10 mA, VCE = 20 V, f = 100 MHz IC = 1.0 mA, VCE = 10 V, f = 1 kHz 4.5 150 450 hie Input Impedance I C = 1.0 mA, VCE = 10 V, 4.0 12 kΩ hre Voltage Feedback Ratio f = 1.0 kHz 4.0 x10-4 hoe Output Admittance 8.0 40 µ mhos rb’Cc Collector-Base Time Constant V CE = 20 V, IC = 10 mA f = 80 MHz 50 ps NF Noise Figure V CE = 5.0 V, IC = 1.0 mA, R S = 100 Ω , f = 100 MHz, Bw = 15 MHz VCE = 5.0 V, IC = 100 µΑ , R S = 1.0 kΩ , PBw = 15.7 kHz 6.0 4.0 dB dB SWITCHING CHARACTERISTICS *Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% ton Turn-on Time V CC = 30 V, IC = 50 mA, 40 ns td Delay Time IB1 = 5.0 mA, VBE ( off ) = 3.0 V 15 ns tr Rise Time 40 ns toff Turn-off Time V CC = 30 V, IC = 50 mA 150 ns ts Storage Time I B1 = IB2 = 5.0 mA 140 ns tf Fall Time 40 ns