PN4117_1 FAIRCHILD | Alldatasheet
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G D S PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 N-Channel Switch This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage - 40 V IGF Forward Gate Current 50 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C G S D TO-92 SOT-23 Mark: 61A / 61C / 61E *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation NOTE: Source & Drain are interchangeable PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 Symbol Characteristic Max Units PN4117-4119 *MMBF4117-4119 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 125 °C/W R θJA Thermal Resistance, Junction to Ambient 357 556 °C/W
Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current*VDS = 10 V, VGS = 0 4117 4118 4119 200 240 600 µA µA µA SMALL-SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% V(BR)GSS Gate-Source Breakdown Voltage IG = - 1.0 µA, VDS = 0 - 40 V IGSS Gate Reverse Current V GS = - 20 V, VDS = 0 VGS = - 20 V, VDS = 0, TA = 150°C - 10 - 25 pA nA VGS(off) Gate-Source Cutoff Voltage VDS = - 10 V, ID = 1.0 nA 4117 4118 4119 - 0.6 - 1.0 - 2.0 - 1.8 - 3.0 - 6.0 V V V gfs Common-Source Forward Transconductance VDS = 10 V VGS = 0, f= 1.0 kHz 4117 4118 4119 100 210 250 330 µmhos µmhos µmhos goss Common-Source Output Conductance VDS = 10 V VGS = 0, f= 1.0 kHz 4117 4118 4119 3.0 5.0 µmhos µmhos µmhos R e(yfs) Common-Source Forwad Transconductance VDS = 10 V, VGS = 0, f= 30 MHz 4117 4118 4119 µmhos µmhos µmhos C iss Input Capacitance V DS = 10 V, VGS = 0, f= 1.0 kHz 3.0 pF C rss Reverse Transfer Capacitance V DS = 10 V, VGS = 0, f= 1.0 MHz, 1.5 pF PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 N-Channel Switch (continued)
PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 N-Channel Switch (continued) Typical Characteristics Parameter Interactions Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics
Typical Characteristics (continued) Output Conductance vs. Drain Current Capacitance vs. Voltage Transconductance vs. Drain Current Noise Voltage vs. Frequency Leakage Current vs. Voltage Common Drain-Source PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119 N-Channel Switch (continued)
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