PN3640

PN3640 FAIRCHILD | Alldatasheet

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This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN3640 *MMBT3640 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V VCBO Collector-Base Voltage 12 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C C B E TO-92 C B E SOT-23 Mark: 2J *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." PN3640 / MMBT3640 Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

(continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 01 2V V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 µA, VBE = 0 12 V V(BR)CBO Collector-Base Breakdown VoltageIC = 100 µA, IE = 0 12 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µ A, IC = 0 4.0 V ICES Collector Cutoff Current V CE = 6.0 V, VBE = 0 VCE = 6.0 V, VBE = 0, TA = 65°C 0.01 1.0 µ A µ A IB Base Current V CE = 6.0 V, VBE = 0 10 nA ON CHARACTERISTICS* hFE DC Current Gain I C = 10 mA, VCE = 0.3 V IC = 50 mA, VCE = 1.0 V 120 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA,TA =65°C 0.3 0.2 0.6 0.25 V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.75 0.8 0.95 1.0 1.5 V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, f = 100 MHz

500 MHz

Cobo Output Capacitance V CB = 5.0 V, IE = 0, f = 1.0 MHz 3.5 pF Cibo Input Capacitance V BE = 0.5 V, IC = 0, f = 1.0 MHz 3.5 pF SWITCHING CHARACTERISTICS td Delay Time VCC = 6.0 V, VBE(off) = 1.9 V, 10 ns tr Rise Time I C = 50 mA, IB1 = 5.0 mA 20 ns ts Storage Time V CC = 6.0 V, IC = 50 mA, 20 ns tf Fall Time I B1 = IB2 = 5.0 mA 12 ns ton Turn-On Time VCC = 6.0 V, VBE(off) = 1.9 V, 25 ns IC = 50 mA, IB1 = 5.0 mA VCC = 1.5 V, IC = 10 mA, 60 ns IB1 = IB2 = 0.5 mA toff Turn-Off Time VCC = 6.0 V, VBE(off) = 1.9 V, 35 ns IC = 50 mA, IB1 = 5.0 mA VCC = 1.5 V, IC = 10 mA, 75 ns IB1 = IB2 = 0.5 mA *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%