PN3638

FTSO3638 FAIRCHILD | Alldatasheet

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27422 Dp

———— PN/MPS/FTSO3638 737 /r Le H {A Schlumberger Company PN/MPS/! FTSO3638A PNP Small Signal General Purpose Amplifiers & Switches . © Vee ... -25 V (Min) PACKAGE © hee ... 30 (Min) (PN/MPS/FTSO3638), PN3638 TO-92 100 (Min) (PN/MPS/FTSO3638A) @ 50 mA PN3638A TO-92 * Complements ... PN3641, PN3643 MPS3638A TO-92 FTSO3638 TO-236AA/AB | ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO3638A TO-236AA/AB ‘Temperatures Storage Temperature -55°C to 150°C Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN/MPS FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1,.0W Voltages & Currents : Vceo Collector to Emitter Voltage -25V (Note 4) : Vcao Collector to Base Voltage -25V Vces Collector to Emitter Voltage -25V Veso Emitter to Base Voltage —-4.0V lc Collector Current (Note 2) 500 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) , 3638 3638A + . SYMBOL] CHARACTERISTIC MIN MAX | MIN MAX | UNITS. TEST CONDITIONS t BVces Collector to Emitter Breakdown v Ic = 100 pA, Var = 0, | Voltage BVcso Collector to Base Breakdown 25 v Ic = 100 pA, Vee = 0 Voltage BVevo Emitter to Base Breakdown Vv Te = 100 pA, Ic = 0 Voltage kes Collector Reverse Current 36 nA Vee = -15 V, Vor = 0 2.0 pA Vee = -15 V, Vee = 0, . Ta = 65°C NOTES: 1. These ratings are limiting values above which the serviceability of any Individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. Thoso ratings give a maximum junction temporature of 150° C and (TO-92)junction-to-case thermal resistance of 125" CMW (derating factor of 80 mWP C); junction-to-ambient thermal resistance of 200° C/W (derating factor of 5.0 mW/* C); (TO-236) junction-to-ambient thermal resistance of 357° GW (derating factor of 2.8 mW C). 4. Rating refers toa high curront point where collector fo emittor voltage Is lowest : 5. Pulse conditions: length = 300 ys: duty oycle = 1%. 8. For product tamily characteristic cures, refer to Curve Set T212. * Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. EES SEP 3-142

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27423 D me

Te 37-15 ; , ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) 3638 3638A SYMBOL| CHARACTERISTIC MIN MAX | MIN MAX | UNITS| TEST CONDITIONS hee DC Pulse Current Gain (Note 6) (MPS3638) lc =10 MA, Vee = -10V 100 lo =10 MA, Vor = 10 V 80 lo = 1.0 MA, Voe = ~10V 100 lc = 50 MA, Voe = -1.0V 20 lc = 300 mA, Vee = -2.0V | : Veeouu | Collector to Emitter Sustaining | -25 V_ [tc =10mA, lb =0 : Voltage (Notes 4 & 5) Veeway | Collector to Emitter Saturation 0.25 —025{ VV | ic=50MA, ls = 2.5 mat Voltage (Pulsed) (Note 5) =1.0 -1.0 | _V_| 1c =300 mA, lp = 30 mA Veewav | Base to Emitter Saturation = V_ | lc =50 mA, lp =2.5 mA Voltage (Note 5) -20 | -08 V_| tc = 300 mA, ls = 30mA Cob Common Base Open Circuit, Vos =—10V, te =0, f= 140kHz Output Capacitance Ce Common Base Open Circuit, Input Capacitance (PN3638A) pF | Ves =~0.5 V, lo =0,f=140kHz (MPS3638A) pF _| Veo=—0.5V, lo =0,f=140kKHz te Magnitude of Small Signal 15 lc = 50 MA, Vee =—3.0 V, Current Gain f= 100 MHz Ne ‘Small Signal Current Gain (PN3638) fo = 10 MA, Vee = -10V, {= 1.0 kHz (MPS3638) Io = 10 MA, Vee = -10 V, f= 1.0 kHz 100 lo = 10 mA, Vee = -10V, f= 1.0 kHz Re Input Resistance 2000 Q | tc=10MA, Vee = 10V, (MPS3638) 1500 OQ _|f=1.0 kHz Now Output Conductance 1200 Ic = 10 MA, Voce = -10 V, . f= 1.0 kHz Re Voltage Feedback Ratio 1600 | x10 | \\,=10 mA, Vee =—10V, : f= 1.0 kHz ton Turn On Time 75 75 Ic ~ 300 mA, le ~ 30 mA, (test circuit no. 536) Vec = 10 V ton Turn Off Time 170 170 Io 300 mA, loi ~lo2~ 30MA, : (test circuit no. 536) Vec = 10 V a A EEE 3-143 : } : ET

FAIRCHILD SEMICONDUCTOR 84 DE I B4b4b74 OO27424 7 I

3469674 FAIRCHILD SEMICONDUCTOR ~ 84D 27424 Dm

PNP High Speed Saturated Logic Switches (YD *® Vceo ... 12 V (Min) (PN/MPS3640) PACKAGE . © bon «+. 251s (Max) @ 50 mA, 60 ns (Max) @ 10 mA; PN3639 TO-92 ‘ton ... 351ns (Max) @ 50 mA, 75 ns (Max) @ 10 mA PN3640 TO-92 * Complements ... PN4274, 2N5769 MPS3639 TO-92 MPS3640 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO3639 TO-236AA/AB FTSO3640 TO-236AA/AB Temperatures Storage Temperature -55°C to 150°C Operating Junction Temperature 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN/MPS FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents 3639 3640 Vceo Collector to Emitter Voltage -6V -12V (Note 4) Veso Collector to Base Voltage -6V -12V Veso Emitter to Base Voltage -4.0V -4.0V . Io Collector Current 80 mA 80 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) PN3639. PN3640 . SYMBOL] CHARACTERISTIC MIN MAX | MIN MAX | UNITS! TEST CONDITIONS BVces Collector to Emitter Breakdown] -6.0 v Ic = 100 pA, Vee = 0 Voltage BVcso Collector to Base Breakdown | -6.0 12.0 Vv Ic = 100 pA, le = 0 Voltage BVeso Emitter to Base Breakdown 4.0 -4.0 v le = 100 pA, le = 0 Voltage Ices Collector Reverse Current nA Voce = -3.0 V, Vee =0 nA | Voe = -6.0 V, Vor = 0 uA | Vee =-3.0V, Vee =0, Ta =65°C BA Voce =-6.0V, Vee =0, Ta = 65°C fre DC Pulse Current Gain Ic = 10 MA, Vee = -0.3 V (Note 5) Ic = 50 MA, Vee = -1.0V notes: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits, The factory should be consulted on applications involving pulsed or low duty cycte operations. ‘8. These ratings glve @ maximum junction temperature of 150°C and (TO-82) junction-to-case thermal resistance ot 125° C/W (derating factor of 80 mW); junetion-to-ambient thermal resistance of 200°CAW (derating factor of 50 mW/* Cl; (T0-296)junetion-to-ambient thermal resistance of 357 GMW (dering factor of 28 mW” C). 4. Rating refers to high current point where collector to emitter voltage Is lowest. 5. Pulse conditions: length = $00 ps; duty cycto = 1% 6. For product family characteristic curves, reer to Curve Set 7292. * package mounted on 88.5% alumina & mm x 8 mm x 06 mm, er A to : , 3-144

a cgoR” EEE ZH OOZzH2s 9 FAIRCHILD SEMICONDUCTOR ay DEgS . 3469674 FAIRCHILD SEMICONDUCTOR . 84D 27425 0 —_ . ; PN/MPS/FTSO3639 : ; PN/MPS/FTSO3640 7. 39-757 ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) PN3639 PN3640 SYMBOL| CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS Veeowus» | Collector to Emitter Sustaining | -6.0 Vv lo = 10 mA, ls = 0 Voltage (Note 5) Veeiea Collector to Emitter Saturation 0.16 0.2 Vv Ic = 10 mA, le = 1.0 MA Voltage (Note 4) -0.5 0.6 v tc = 50 mA, ls = 5.0 mA 0.23 0,25 Vv Ic = 10 mA, le = 1.0 mA, 3 Bm Ta = 65°C Yat 15 1.5 Vv Ic = 50 mA, le = 5.0 MA Cov Output Capacitance PF | Vca=~5.0V, le=0,f=140kHz PF | Vos =0, le = 0, f= 140 kHz Co Input Capacitance [ [35 | [35 | pF | Ves=-05V, lo=0,f=140kHz hte High Frequency Current Gain lo = 10 mA, Vea = 0, f= 100 MHz lo = 10 MA, Vee = -5.0 V, : f= 100 MHz To Storage Time Ic = 10 MA, las = lez 10 MA, (test circuit no. 234) Veo = 3.0 V ton Turn On Time Ic = 50 mA, Ia; = 5.0 mA, (test circuit no. 235) Vec = 6.0 V (test circuit no. 219) Ic = 10 MA, la; ~ 0.5 mA, Vec = -1.5 V tont Turn Off Time 35 Ic = 50 mA, ler = Is2=5.0mA, (test circuit no. 235) Veo = 6.0 V (test circuit no. 219) 75 Ic = 10mA, ler = lez 0.5 mA, Voc = 1.5 V MPS3639 MPS3640 SYMBOL| CHARACTERISTIC MIN MAX _| MIN MAX | UNITS TEST CONDITIONS BVces Collector to Emitter Breakdown] —6.0 v Ic = 100 yA, Vee = 0 Voltage . BVcso Collector to Base Breakdown | -6.0 v Ic = 100 pA, le = 0 Voltage BVeso Emitter to Base Breakdown 4.0 4.0 v le = 100 pA, lc =0 Voltage Ices Collector Reverse Current nA Vee = -3.0 V, Vee = 0 10 nA | Vee = -6.0 V, Vee = 0 . pA Vee =—3.0V, Vac =0, Ta =65° C 1.0 uA Vee =~6.0V, Vac =0, Ta = 65° C ee eee SN 3-145

FAIRCHILD SEMICONDUCTOR 64 DE | 3469674 OOe74#eb O t PN/MPS/FTSO3639 PN/MPS/FTSO3640 “7 37-/5" ee MPS3639_ | MPS3640 +_SYMBOL| CHARACTERISTIC MIN. MAX [MIN MAX | UNITS | TEST CONDITIONS tre DG Pulse Current Gain 30 Ic = 10 MA, Vee = -0.3 V (Note 5) 20 Ic = 50 MA, Vee = -1.0 V Vecouwn | Collector to Emitter Sustaining! —6.0 V_ [lc=10mA, b=0 Voltage (Note 5) Veewsn | Collector to Emitter Saturation 0.16 02 | V |ic=10mA,le=1.0mA Voltage (Note 5) -05 -06 | V_ | Ic=50mA, Ip=5.0mA 0.23 -025| Vv |lc=10mA, la=1.0mA, : T= 65°C Voltage (Note 5) -08| -1.0|-08] -1.0 | Vv |le=10mA, la=1.0mA 15 15 V_| tc =50 mA, ls = 5.0 mA Cov Output Capacitance [ [| 35| | 35 | pF_| Voo=-6.0V, le=0,f=140kHz Cy Input Capacitance [ [35 [| 35 | pF | Veo=-0.5V, lo=0,f=140kHz Die High Frequency Current Gain le =10 mA, Ves = 0, f= 100 MHz lc = 10 mA, Vee = -5.0, {= 100 MHz ten Turn On Time Te = 50 MA, Ie, ~ 5.0 mA, (test circuit no. 235) Vec = 6.0 V (test circuit no. 219) Io = 10 MA, los = 0.5 mA, Veo = 1.5 V te Turn Off Time 35 1o= 50 MA, lar ~ lea =5.0MA, (test circuit no, 235) Voc = -6.0 V (test circuit no, 219) 75 1o=10MA, loi = Ine =0.5mA, Voc = 1.5 V AS TT aS 3-148

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27427 DA,

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A Schlumberger Company PN. 3643, JETS 03643 NPN General Purpose Small Signal . Amplifiers

45 V (Min) (PN/FTSO3642) PN3641 TO-92

© fre ... 100 (Min) @ 150 mA, 25 (Min) @ 500 mA PN3642 TO-92 (PN/FTSO3643) PN3643 TO-92 . © Po... 400 mW RF Power Out at 30 MHz FTSO3641 TO-236AA/AB © fy... 250 MHz (Min) (PN3643) FTSO3642 TO-236AA/AB © ton «-- 60ns (Max) @ 300 mA, ton... 150.ns (Max) @ 300 mA FTSO3643 TO-236AA/AB . © Complements ... MPS3638/A, PN3644 ABSOLUTE MAXIMUM RATINGS (Note 1) P| | ‘Temperatures Storage Temperature -58' C to 150°C Operating Junction Temperature 480°C Power Dissipation (Notes 2 & 3) Total Dissipation at PN FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents 3641/3 3642 Vceo Collector to Emitter Voltage 30V 45V (Note 4) Vceo Collector to Base Voltage 60V 60V Veso Emitter to Base Voltage 5.0V 5.0V lo Collector Current 500 mA 500 mA ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) 3641 3642 SYMBOL | CHARACTERISTIC MIN MAX| MIN MAX | UNITS TEST CONDITIONS BVceowus | Collector to Emitter Breakdown) 45 v Ic = 10 mA, ls = 0 Voltage (Notes 4 & 5) BVces Collector to Emitter Breakdown] v Ic =10 pA, Vee = 0 : Voltage : BVcs0 _| Collector to Base Breakdown V | lc=10HA, le=0 : Voltage i BVeso Emitter to Base Breakdown v le = 10 pA, lo = 0 Voltage ‘ NOTES: sor Tpese ratings are limiting values above which the serviceablity of any Individual semiconductor device may be impaired. 2. These are sleady state limits. The factory should be consulted on applications involving pulsed or low duly cycle operations. F These outings ove a. maximum junction temperature of 180°C and (0-92) junction-to-case thermal resistance of 125°C/AW (derating factor of 80 TW" Oh leveton-to-amblent ermal resistance of 200° CAV (rating factor ot 60 mW/*C); (0-286) junction-to-amblent thermal resistance of 387° CAW (derating factor of 28 mW" ©). 4, Rating relers to @ high current point where collector to emitter voltage Is lowest. Pulse conditions: length = 900 ya: duly cycle = 1% 6. For product family characteristic cures, refer to Curve Set T146. Package mounted on 89.5% alumina @ mm x 8 mm x 0.6 mm. 3-147 : —

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27428 D oom

PN3642/FTS03642 T- 24.23 PN3643/FTSO3643 a . 1 ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) 3641 3642 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS| TEST CONDITIONS ; lees Collector Cutoff Current 50 nA | Vee = 50V, Voz = 0 (Note 5) 4.0 uh | Vor = 50V, Vee = 0, Ta = 65°C : Tre DC Pulse Current Gain (Note 5)| 40 Io = 180 MA, Vee = 10V 15 lo = 500 mA, Voe = 10 V , Veesav | Collector to Emitter Saturation V_| c= 150 mA, Ip = 15 mA Voltage (Note 5) Con Output Capacitance |_| eo | | 80 | pF | Veo=10V, le =0,1=140kHz Hie Magnitude of Common Emitter, lo = 50 MA, Vee = 5.0 V, Short Circuit Small Signal f= 100 MHz Current Gain Gre ‘Amplifier Power Gain 10 (Zero Signal) Voz = 15 V, (test circuit no. 238) lc =0, Ra = 140.0, R. = 260 0, f = 30 MHz, Piy = 40 mW

7 Collector Efficiency (Zero Signal) Voz = 15 V,

(test circuit no. 238) Ic = 0, Ra = 140.0, R. = 260 0, f = 30 MHz, Piy = 40 mW ten Turn On Time fo = 300 MA, lo: ~ 30 mA, (test circuit no. 241) ton Turn Off Time 150 750 | ns | lc~G00MA, ler ~tea= 30mA (test circuit no. 242) 3643, SYMBOL| CHARACTERISTIC MIN MAX _| UNITS TEST CONDITIONS BVceows | Collector to Emitter Breakdown V | to=10mA, b=0 Voltage (Notes 4 & 5) BVces | Collector to Emitter Breakdown V_ | te=10pA, Vee =0 : Voltage BVeso | Collector to Base Breakdown Vj =10pA, le =0 Voltage BVeeo | Emitter to Base Breakdown Voltage | 60 | | V_ | le=10HA,b=0 toes Collector Cutoff Current (Note 5) TA | Vee = 50 V, Vaz = 0 HA | Vee = 50 V, Var = 0, Th = 65°C Tre DC Pulse Current Gain (Note 5) Te = 150 MA, Vor = 10V le = 500 MA, Vee = 10V Veessv | Collector to Emitter Saturation V_ | = 150 mA, l= 15 mA Voltage (Note 5) 3-148

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27429 D5 —

PN3642/FTSO3642 “T- 21.23 PN3643/FTSO3643 . ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) 3643 SYMBOL MIN _MAX_| UNITS TEST CONDITIONS Cop [| Output Capacitance || 8.0 | pF | Vow = 10V, le = 0, f = 140 kHz Dte Magnitude of Common Emitter, Ic = 50 MA, Voce = 5.0 V, ' Short Circuit Small Signal f= 100 MHz . Current Gain Gre ‘Amplifier Power Gain (Zero Signal) Vce = 15 V, F] t (test circuit no. 238) Ic = 0, Re = 140 9, Ry. = 260 9, f = 30 MHz, Pin = 40 mW ” Collector Efficiency (Zero Signal) Vce = 15 V, (test circuit no. 238) Ic =0, Ro = 140 9, R. = 260 9, f = 30 MHz, Pin = 40 mW. ton Turn On Time Ic = 300 mA, Ia: ~ 30 mA, (test circuit no. 241) ton Turn Off Time ns lo = 300 mA, Ia: ~ lee = 30 mA (test circuit no. 242) 3-149