PN3568 FAIRCHILD | Alldatasheet
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Discrete POWER & Signal Technologies NPN General Purpose Amplifier PN3568 This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. SeeTN3019A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN3568 PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92 1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 30 mA, IB = 06 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µ A, IE = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µ A, IC = 0 5.0 V ICBO Collector Cutoff Current V CB = 40 V, IE = 0 VCB = 40 V, IE = 0, TA = 75 °C 5.0 nA µA IEBO Emitter Cutoff Current V EB = 4.0 V, IC = 0 25 nA ON CHARACTERISTICS* hFE DC Current Gain V CE = 1.0 V, IC = 30 mA VCE = 1.0 V, IC = 150 mA 40 120 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.25 V VBE(on) Base-Emitter On Voltage V CE = 1.0 V, IC = 150 mA 1.1 V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 10 V, f = 1.0 MHz 20 pF Cib Input Capacitance V EB = 0.5 V, f = 1.0 MHz 80 pF hfe Small-Signal Current Gain I C = 50 mA, VCE = 10 V, f = 20 MHz 3.0 30 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%