PN3563 FAIRCHILD | Alldatasheet
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Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 2.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN3563 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W C B E TO-92 PN3563 Discrete POWER & Signal Technologies 1997 Fairchild Semiconductor Corporation
(continued) Electrical Characteristics TA= 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units VCEO( sus) Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 2.0 V ICBO Collector Cutoff Current V CB = 15 V, IE = 0 VCB = 15 V, TA = 150°C 0.05 5.0 µ A nA ON CHARACTERISTICS* hFE DC Current Gain I C = 8.0 mA, VCE = 10 V 20 200 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 8.0 mA, VCE = 10 V, f = 100 MHz 600 1500 MHz Cobo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz VCB = 0, IE = 0, f = 1.0 MHz 1.7 3.0 pF pF Cibo Input Capacitance V BE = 0.5 V, IC = 0, f = 140 MHz 2.0 pF hfe Small-Signal Current Gain I C = 8.0 mA, VCE = 10 V, f = 1.0 kHz 20 250 rb’CC Collector Base Time Constant I C = 8.0 mA, VCE = 10 V, f = 79.8 MHz 8.0 25 pS FUNCTIONAL TEST G pe Amplifier Power Gain I C = 8.0 mA, VCB = 10 V, f = 200 MHz 14 26 dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%