PN2222A MCC | Alldatasheet

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Technical content

Features

  • Through Hole Package
  • Capable of 600mWatts of Power Dissipation DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .175 .185 4.45 4.70 B .175 .185 4.46 4.70 D .016 .020 0.41 0.63 E .135 .145 3.43 3.68 G .095 .105 2.42 2.67 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* C=10mAdc, IB=0)

40 Vdc

V(BR)CBO Collector-Base Breakdown Voltage C=10µAdc, IE=0)

75 Vdc

V(BR)EBO Emitter-Base Breakdown Voltage E=10µAdc, IC=0)

6.0 Vdc

CE=60Vdc, VBE=3.0Vdc) 20 nAdc ICEX Collector Cutoff Current CE=60Vdc, VBE=3.0Vdc) 10 nAdc ON CHARACTERISTICS hFE DC Current Gain* C=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc) (IC=150mAdc, VCE=1.0Vdc) (IC=500mAdc, VCE=10Vdc) 100 300 VCE(sat) Collector-Emitter Saturation Voltage C=150mAdc, IB=15mAdc) (IC=500mAdc, IB=50mAdc) 0.3 1.0 Vdc VBE(sat) Base-Emitter Saturation Voltage C=150mAdc, IB=15mAdc) (IC=500mAdc, IB=50mAdc) 0.6 1.2 2.0 Vdc SMALL-SIGNAL CHARACTERISTICS fT Current Gain-Bandwidth Product C=20mAdc, VCE=20Vdc, f=100MHz) 300 MHz Cobo Output Capacitance CB=10Vdec, IE=0, f=100kHz) 8.0 pF Cibo Input Capacitance BE=0.5Vdc, IC=0, f=100kHz) 25 pF NF Noise Figure C=100µAdc, VCE=10Vdc, RS=1.0kΩ f=1.0kHz) 4.0 dB SWITCHING CHARACTERISTICS td Delay Time (VCC=30Vdc, VBE=0.5Vdc 10 ns tr Rise Time IC=150mAdc, IB1=15mAdc) 25 ns ts Storage Time (VCC=30Vdc, IC=150mAdc 225 ns tf Fall Time IB1=IB2=15mAdc) 60 ns *Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Pin Configuration Bottom View C B E A E B C D G www.mccsemi.com /G01/G02/G03/G04/G05/G06/G07/G05/G08/G08/G09/G04/G03/G02/G0A/G0B/G06/G07omponents

21201 Itasca Street Chatsworth

/G07/G18/G06/G19/G0F/G1A/G0F/G0F /G1B/G15/G05/G1C/G09/G1D/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G1A /G24/G0A/G25/G1D/G06/G06/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G19 MCC

DC Current Gain vs Collector Current hFE IC (mA) 160 240 320 400 480 0.1 1 10 100 Input and Output Capacitance vs Reverse Bias Voltage Volts - (V) pF 0.1 1.0 10 C OB CIB f = 1.0MHz Maximum Power Dissipation vs Ambient Temperature P D(MAX) - (mW) TA - (°C) TO-92 SOT-23 200 400 600 800 0 50 100 150 200 VCE = 5.0V Collector Current vs Collector-Emitter Voltage I C - (mA) VCE - (V) IB = 2mA IB = 1mA 100 150 200 250 0 .5 1.0 1.5 2.0 Collector Current vs Collector-Emitter Voltage I C - (mA) VCE- (V) 35µA 30µA 10 20 30 40 50 25µA 20µA 15µA 10µA 5µA IB = 3mA IB = 4mA Contours of Constant Gain Bandwidth Product (f VCE - (V) IC - (mA) 0.1 1.0 10 100 *50MHz increments from 150 to 250MHz and 260MHz MCC www.mccsemi.com

Collector Saturation Voltage vs Collector Current V CE(SAT) - (V) IC - (mA) .01 .06 1.0 1.4 0.1 1.0 10 100 TA = 125°C TA = 25°C IC/IB = 10 IC - (mA) Collector Saturation Voltage vs Collector Current V CE(SAT) - (V) TA = 25°C 0.1 1.0 10 100.01 .06 Base Saturation Voltage vs Collector Current V BE(SAT) - (V) 0.1 0.6 1.0 10 100 1000 I C - (mA) IC/IB = 10 Switching Times vs Collector Current T - (ns) I C - (mA) 1.0 100 1000 1.0 10 100 IB1 = IB2 = IC/10 ts tf tr td Base Saturation Voltage vs Collector Current V BE(SAT) - (V) .01 .06 1.0 1.4 1.0 10 100 1000 I C - (mA) hfe=10 hfe=20 TA=25°C TA=125°C hfe=20 hfe=10 MCC www.mccsemi.com