MMBT2222A FAIRCHILD | Alldatasheet

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Features

  • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
  • Sourced from process 19. Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25°C unless otherwise noted * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. ** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 1.0 A TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Max. Units PN2222A *MMBT2222A **PZT2222A PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W PN2222A MMBT2222A PZT2222A EBC TO-92 SOT-23 SOT-223 Mark:1P C B E E B C C

PN2222A / MMBT2222A / PZT2222A — NPN General Purpose Amplifier © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com PN2222A / MMBT2222A / PZT2222A Rev. A3 2 Electrical Characteristics Ta = 25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Symbol Parameter Test Condition Min. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage * I C = 10mA, IB = 0 40 V BV(BR)CBO Collector-Base Breakdown Voltage I C = 10μA, IE = 0 75 V BV(BR)EBO Emitter-Base Breakdown Voltage I E = 10μA, IC = 0 6.0 V ICEX Collector Cutoff Current V CE = 60V, VEB(off) = 3.0V 10 nA ICBO Collector Cutoff Current V CB = 60V, IE = 0 VCB = 60V, IE = 0, Ta = 125°C 0.01 μA μA IEBO Emitter Cutoff Current V EB = 3.0V, IC = 0 10 nA IBL Base Cutoff Current V CE = 60V, VEB(off) = 3.0V 20 nA On Characteristics hFE DC Current Gain I C = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 10mA, VCE = 10V, Ta = -55°C IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1V * IC = 500mA, VCE = 10V * 100 300 V CE(sat) Collector-Emitter Saturation Voltage * I C = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.3 1.0 V V VBE(sat) Base-Emitter Saturation Voltage * I C = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 1.2 2.0 V V Small Signal Characteristics fT Current Gain Bandwidth Product I C = 20mA, VCE = 20V, f = 100MHz 300 MHz Cobo Output Capacitance V CB = 10V, IE = 0, f = 1MHz 8.0 pF Cibo Input Capacitance V EB = 0.5V, IC = 0, f = 1MHz 25 pF rb’Cc Collector Base Time Constant I C = 20mA, VCB = 20V, f = 31.8MHz 150 pS NF Noise Figure I C = 100μA, VCE = 10V, RS = 1.0KΩ, f = 1.0KHz 4.0 dB Re(hie) Real Part of Common-Emitter High Frequency Input Impedance IC = 20mA, VCE = 20V, f = 300MHz 60 Ω Switching Characteristics td Delay Time V CC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA 10 ns tr Rise Time 25 ns ts Storage Time V CC = 30V, IC = 150mA, IB1 = IB2 = 15mA 225 ns tf Fall Time 60 ns

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