PN2222A STMICROELECTRONICS | Alldatasheet

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SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA ■ SILICON EPITAXIAL PLANAR NPN TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY ■ THE PNP COMPLEMENTARY TYPE IS PN2907A

APPLICATIONS

■ WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM February 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Emitter Voltage (IE = 0) 75 V V CEO Collector-Emitter Voltage (IB = 0) 40 V V EBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A P tot Total Dissipation at Tamb = 25 oC 500 mW Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack

R thj-amb • R thj-case • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Case Max 250 83.3 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEX Collector Cut-off Current (VBE = -3 V) V CE = 60 V 10 nA IBEX Base Cut-off Current (VBE = -3 V) V CE = 60 V 20 nA ICBO Collector Cut-off Current (IE = 0) V CB = 75 V V CB = 75 V Tj = 150 oC nA µ A IEBO Emitter Cut-off Current (IC = 0) V EB = 3 V 15 nA V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 10 mA 40 V V (BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 10 µA 75 V V (BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 µ A 6V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 150 mA IB = 15 mA IC = 500 mA IB = 50 mA 0.3 V V V BE(sat)∗ Collector-Base Saturation Voltage IC = 150 mA IB = 15 mA IC = 500 mA IB = 50 mA 0.6 1.2 V V hFE ∗ DC Current Gain I C = 0.1 mA VCE = 10 V IC = 1 mA VCE = 10 V IC = 10 mA VCE = 10 V IC = 150 mA VCE = 10 V IC = 150 mA VCE = 1 V IC = 500 mA VCE = 10 V 100 300 f T Transition Frequency I C = 20 mA VCE = 20V f = 100MHz 270 MHz C CBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1 MHz 4 8 pF C EBO Emitter-Base Capacitance IC = 0 VEB = 0.5 V f = 1MHz 20 25 pF NF Noise Figure I C = 0.1 mA VCE = 10 V f = 1 KHz Δ f = 200 Hz RG = 1 KΩ 4d B hie∗ Input Impedance V CE = 10 V IC = 1 mA f = 1 KHz V CE = 10 V IC = 10 mA f = 1 KHz 0.25 1.25 KΩ KΩ hre∗ Reverse Voltage Ratio V CE = 10 V IC = 1 mA f = 1 KHz V CE = 10 V IC = 10 mA f = 1 KHz 10-4 10-4 hfe∗ Small Signal Current Gain V CE = 10 V IC = 1 mA f = 1 KHz V CE = 10 V IC = 10 mA f = 1 KHz 300 375 hoe∗ Output Admittance V CE = 10 V IC = 1 mA f = 1 KHz V CE = 10 V IC = 10 mA f = 1 KHz 200 µ S µ S ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % PN2222A

ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit td Delay Time I C = 150 mA IB = 15 mA V CC = 30 V 51 0 n s tr Rise Time 12 25 ns ts Storage Time I C = 150 mA IB1 = - IB2 = 15 mA V CC = 30 V 185 225 ns tf Fall Time 24 60 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % PN2222A

DIM. mm inch A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree TO-92 MECHANICAL DATA PN2222A

DIM. mm inch A1 4.80 0.189 T 3.80 0.150 T1 1.60 0.063 T2 2.30 0.091 d 0.48 0.019 delta H -2.00 2.00 -0.079 0.079 W2 0.50 0.020 H 18.50 20.50 0.728 0.807 H1 25.00 0.984 t 0.90 0.035 L 11.00 0.433 I1 3.00 0.118 delta P -1.00 1.00 -0.039 0.039 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA PN2222A

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