PN2222 DIOTEC | Alldatasheet
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NPN Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren NPN Version 2006-09-12 Dimensions - Maße [mm] Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) PN2222 (2N2222) PN2222A (2N2222A) Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 30 V 40 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 60 V 75 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 5 V 6 V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC = 0.1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V hFE hFE hFE hFE 100 300 IC = 500 mA, VCE = 10 V PN2222 PN2222A hFE hFE h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA Small signal current gain Kleinsignal-Stromverstärkung PN2222A PN2222A hfe hfe 300 375 Input impedance – Eingangs-Impedanz PN2222A PN2222A hie hie 2 kΩ 0.25 kΩ 8 kΩ 1.25 kΩ Output admittance – Ausgangs-Leitwert PN2222A PN2222A hoe hoe 5 µS 25 µS 35 µS 200 µS 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2 x 2.54 C B E
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA PN2222 PN2222A VCEsat VCEsat 0.4 V 0.3 V IC = 500 mA, IB = 50 mA PN2222 PN2222A VCEsat VCEsat 1.6 V 1.0 V Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA PN2222 PN2222A VBEsat VBEsat 0.65 V 1.3 V 1.2 V IC = 500 mA, IB = 50 mA PN2222 PN2222A VBEsat VBEsat 2.6 V 2.0 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 50 V, (E open) VCB = 60 V, (E open) PN2222 PN2222A ICBO ICBO 10 nA 10 nA VCB = 50 V, Tj = 125°C, (E open) VCB = 60 V, Tj = 125°C, (E open) PN2222 PN2222A ICBO ICBO 10 µA 10 µA Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 3 V, (C open) PN2222A IEB0 – –- 100 nA Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz fT 250 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO – – 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 30 pf Noise figure – Rauschzahl VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz PN2222A F – – 4 dB Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time VCC = 3 V, VBE = 0.5 V IC = 150 mA, IB1 = 15mA td – – 10 ns tr – – 25 ns storage time fall time VCC = 3 V, IC = 150 mA, IB1 = IB2 = 15 mA ts – – 225 ns tf – – 60 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren PN2709 / PN2709A 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG