PN2222 DCCOM | Alldatasheet

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for general purpose amplifier and high- speed, medium-power switching applications. Pinning 1 = Emitter 2 = Base 3 = Collector TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 600 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 60 - - V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 Collector Cutoff Current ICBO - - 10 nA VCB=50V, IE=0 Collector-Emitter Saturation Voltage(1) VCE(sat)1 - - 0.4 V IC=150mA, IB=15mA VCE(sat)2 - - 1.6 V IC=500mA, IB=50mA Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 1.3 V IC=150mA, IB=15mA VBE(sat)2 - - 2.6 V IC=500mA, IB=50mA hFE1 35 - - - IC=0.1mA, VCE=10V hFE2 50 - - - IC=1mA, VCE=10V DC Current Gain(1) hFE3 75 - - - IC=10mA, VCE=10V hFE4 100 - 300 - IC=150mA, VCE=10V hFE5 30 - - - IC=500mA, VCE=10V Transition Frequency fT 250 - - MHz IC=20mA, VCE=20V, f=100MHz Output Capacitance Cob - - 8 pF VCB=10V, f=1MHz, IE=0

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%